Abstract: A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

Abstract: Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.

Abstract: A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

Abstract: During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.

Abstract: A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.

Abstract: A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.

Abstract: A technique and system for tuning temperature sensor readings in a thermal processing chamber includes determining an actual temperature profile for a substrate based on measurements of the substrate. A simulated temperature profile for the substrate is calculated using a respective interim temperature correction value for one or more temperature sensors associated with the chamber. A Gaussian-like distribution for thermal contributions from multiple radiation sources in the chamber can be used to simulate the temperature profile. The simulated temperature profile and the actual temperature profile are combined to form an estimated temperature profile. A final value for each respective temperature correction value is determined using an optimization algorithm which results in the estimated temperature profile being substantially uniform across the surface of the substrate.

Abstract: An ellipsometer, used in particular for measuring the thickness of oxide films on silicon wafers inside an oven, comprising an analyzer unit (3), a beam deflection device, a paddle and a ploarizer unit (2). In order to increase the measurement precision, the ellipsometer is designed so that the beam deflection device comprises two prisms (6, 9), the prisms (6,9), the analyzer unit (3) and the polarizer unit (2) are mounted on the paddle (11), and two tubes (4, 10) are provided for guiding the beam from the polarizer unit (2) to the first prism (6) and from the second prism (9) to the analyzer unit (3) .