Abstract: Most mechanical tests (compression testing, tensile testing, flexure testing, shear testing) of samples in the sub-mm size scale are performed under the observation with an optical microscope or a scanning electron microscope. However, the following problems exist with prior art force sensors as e.g they cannot be used for in-plane mechanical testing (a- and b-direction) of a sample; they cannot be used for vertical testing (c-direction) of a sample. In order to overcome the before mentioned drawbacks the invention comprises the following basic working principle: A force is applied to the probe (2) at the probe tip (1) of the sensor. The force is transmitted by the sensor probe (2) to the movable body (3) of the sensor. The movable body is elastically suspended by four folded flexures (4), which transduce the force into a deflection dx. This deflection is measured by an array of capacitor electrodes, called capacitive comb drive (6).

Abstract: Most mechanical tests (compression testing, tensile testing, flexure testing, shear testing) of samples in the sub-mm size scale are performed under the observation with an optical microscope or a scanning electron microscope. However, the following problems exist with prior art force sensors as e.g they cannot be used for in-plane mechanical testing (a- and b-direction) of a sample; they cannot be used for vertical testing (c-direction) of a sample. In order to overcome the before mentioned drawbacks the invention comprises the following basic working principle: A force is applied to the probe (2) at the probe tip (1) of the sensor. The force is transmitted by the sensor probe (2) to the movable body (3) of the sensor. The movable body is elastically suspended by four folded flexures (4), which transduce the force into a deflection dx. This deflection is measured by an array of capacitor electrodes, called capacitive comb drive (6).

Abstract: According to the invention, for connections between terminals connected to different networks, the terminals intended for connection to the network having the higher capacity are so equipped that, alternatively (I, II), they could also operate at the network having the lower capacity. In these terminals as well as at the interface between the two networks, simple network interface devices (30, 60) are inserted which insert and extract the filler bits in a suitable manner.

Abstract: Manufacture of silicon granules from molten silicon by pouring molten silicon into a liquid body to solidify and granulate the silicon. The liquid body is substantially free of impurities which will contaminate the silicon.

Abstract: A method for tapping a furnace contains a tappable melt of silicon dioxide to be reduced to silicon with carbon, which comprises providing a graphite tap pipe on the furnace, and electrically heating the tap pipe to cause liquid silicon to flow out of the pipe, and a device for carrying out the method.

Abstract: Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of the deposition, at a temperature at least equal to optimal temperature for deposition of silicon thereon and, in accordance with consequent increase in thickness of the silicon deposited on the substrate, gradually reducing the temperature of the substrate while maintaining at a minimal value the other parameters determining the rate of deposition.

Abstract: Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current.

Abstract: Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of deposition, at a temperature lower than optimal temperature for deposition of silicon thereon, maintaining the lower than optimal temperature during a first deposition phase, thereafter raising the temperature of the substrate to the optimal temperature while maintaining the other parameters determining the rate of deposition, and maintaining the optimal temperature for the remainder of the deposition.

Abstract: Crystal wafer rack structures composed of Si or SiC are produced by forming a tube-shaped body, for example, of Si, by pyrolytic deposition of silicon on a heated graphite mandrel from a suitable gaseous atmosphere with the removal of the mandrel without destroying the body and then machining the tube so that two separate wall portions are formed therefrom which extend parallel to the tube axis and are joined to one another by at least one bridging portion in the form of a closed arc between such wall portions and a plurality of uniformly spaced support grooves are provided in each of the wall portions for supporting the wafers during processing.

Abstract: The hybrid includes a control circuit which automatically matches the impedance of the balancing network to the input impedance of the two-wire line connected to the hybrid. For control, rectified voltages present on the two-wire side and across the balancing network are averaged over time and the mean time values are compared.

Abstract: A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

Abstract: A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.

Abstract: A device for supplying heating current to a semiconductor carrier in connection with the thermal separation from a reactance gas, and deposition of semiconductor material upon such a carrier, with the device being operative to supply various voltage-current combinations required to maintain constant temperature of the carrier during the deposition operation, with the current supplied to the carrier being initiated during zero passages of the A.C. supply, and with control of the number of oscillations, per unit of time, of the heating current supplied.

Abstract: A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped member is then cut and mechanically processed in directions parallel and perpendicular to the axes of the tube to form a support structure having a flat base and upwardly extending curved side walls.

Abstract: A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.

Abstract: A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.

Abstract: For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped,electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.

Abstract: An improved tubular oven adapted for use in diffusion processing of semiconductors whose interior walls are comprised of polycrystalline silicon and whose exterior walls are comprised of phosphorous doped silicon. Block electrical contacts are located at opposed ends of such tubular oven and are comprised of conductive metal and graphite. A layer of thermal insulation circumscribes mid regions of such tubular oven.

Abstract: For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped, electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.

Abstract: Hollow semiconductor bodies having an outer surface composed of a doped semiconductor material and an inner surface composed of a pure semiconductor material are formed by sequential deposition from a gaseous thermally decomposable semiconductor compound onto a heated carrier member. The multi-layer hollow semiconductor bodies are directly heatable during diffusion of dopants into semiconductor elements.