Abstract: A method for work hardening gold contact pads is disclosed. The method includes providing gold contact pads, providing lapping pads, and placing the lapping pads in contact with the gold contact pads to create a contact interface. A liquid medium is then applied to the contact interface while moving the lapping pads relative to the gold contact pads. The liquid medium is preferably a particulate-free pH neutral liquid, which makes water a good choice. Also disclosed is a gold pad having a work hardened surface.

Abstract: The perpendicular magnetic head fabrication and testing method includes the additional fabrication of magnetic pole testing structures in the kerf area of the wafer substrate. Particularly, magnetic interconnect pieces are fabricated in the kerf area to magnetically connect an extending portion of the first magnetic pole with an extending portion of the second magnetic pole. As a result, when the perpendicular magnetic heads are fabricated at the wafer level, the first and second magnetic poles are interconnected through structures located in the kerf area. Thereafter, an ISAT magnetic pole test can be conducted by passing electrical current through the induction coil of the magnetic head, and magnetic flux will flow through the interconnected magnetic pole structure, thereby enabling the testing of the magnetic poles of the perpendicular magnetic head at the wafer level.

Abstract: A method for work hardening gold contact pads is disclosed. The method includes providing gold contact pads, providing lapping pads, and placing the lapping pads in contact with the gold contact pads to create a contact interface. A liquid medium is then applied to the contact interface while moving the lapping pads relative to the gold contact pads. The liquid medium is preferably a particulate-free pH neutral liquid, which makes water a good choice. Also disclosed is a gold pad having a work hardened surface.

Abstract: The perpendicular magnetic head fabrication and testing method includes the additional fabrication of magnetic pole testing structures in the kerf area of the wafer substrate. Particularly, magnetic interconnect pieces are fabricated in the kerf area to magnetically connect an extending portion of the first magnetic pole with an extending portion of the second magnetic pole. As a result, when the perpendicular magnetic heads are fabricated at the wafer level, the first and second magnetic poles are interconnected through structures located in the kerf area. Thereafter, an ISAT magnetic pole test can be conducted by passing electrical current through the induction coil of the magnetic head, and magnetic flux will flow through the interconnected magnetic pole structure, thereby enabling the testing of the magnetic poles of the perpendicular magnetic head at the wafer level.

Abstract: A method for detecting defects in devices that are fabricated in repetitive patterns upon the surface of a substrate by the, repetitive utilization of masks and similar devices. A mask flaw will become manifest in a series of defective devices as the mask is successively utilized. The detection of repetitive defects is undertaken by determining the electrical resistance of devices in a group, such as a column, fabricated upon the wafer surface, where the repetitive defect will occur multiple times. The mean electrical resistance of the group is determined and a percent deviation of each device from the mean is then determined. The percent deviation of all of the devices in the group are multiplied together to create a multiplied percent deviation number and the multiplied percent deviation number is then compared with a figure of merit value to make a determination of whether defective devices exist within the group.

Abstract: A method for detecting defects in devices that are fabricated in repetitive patterns upon the surface of a substrate by the, repetitive utilization of masks and similar devices. A mask flaw will become manifest in a series of defective devices as the mask is successively utilized. The detection of repetitive defects is undertaken by determining the electrical resistance of devices in a group, such as a column, fabricated upon the wafer surface, where the repetitive defect will occur multiple times. The mean electrical resistance of the group is determined and a percent deviation of each device from the mean is then determined. The percent deviation of all of the devices in the group are multiplied together to create a multiplied percent deviation number and the multiplied percent deviation number is then compared with a figure of merit value to make a determination of whether defective devices exist within the group.

Abstract: In fabricating magnetic heads on a wafer surface, magnetoresistive sensors having two different stripe heights and the same stripe width are formed. Additionally, two different electronic lapping guides (ELGs) having different stripe heights and the same stripe width are also formed. While the design widths and heights of the sensors and ELGs are known, the actually fabricated widths and heights of the sensors and ELGs is unknown, due to the windage in the fabrication process. In the present invention, to determine the actual track width of the sensors, the change in electrical resistance of the sensors and ELGs is experimentally determined during the application of a magnetic field to the sensors and ELGs. Through a mathematical analysis, the actual track width of the fabricated sensors is determined utilizing the design widths and heights of the sensors and ELGs, together with the experimentally determined changes in electrical resistance of the sensors and ELGs.

Abstract: In fabricating magnetic heads on a wafer surface, magnetoresistive sensors having two different stripe heights and the same stripe width are formed. Additionally, two different electronic lapping guides (ELGs) having different stripe heights and the same stripe width are also formed. While the design widths and heights of the sensors and ELGs are known, the actually fabricated widths and heights of the sensors and ELGs is unknown, due to the windage in the fabrication process. In the present invention, to determine the actual track width of the sensors, the change in electrical resistance of the sensors and ELGs is experimentally determined during the application of a magnetic field to the sensors and ELGs. Through a mathematical analysis, the actual track width of the fabricated sensors is determined utilizing the design widths and heights of the sensors and ELGs, together with the experimentally determined changes in electrical resistance of the sensors and ELGs.