Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.

Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

Abstract: A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure.

Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.

Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx?) and residual roll (Ryy?). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.

Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

Abstract: A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure.

Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx?) and residual roll (Ryy?). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.

Abstract: Alignment data from an exposure tool suitable for exposing a plurality of semiconductor wafers are provided, the alignment data including alignment values applied by the exposure tool to respective ones of the plurality of semiconductor wafers at a plurality of measured positions.

Abstract: A method of forming an integrated circuit having a capacitor is disclosed. In one embodiment, the method includes forming a capacitor element with a first electrode, a dielectric layer and a second electrode. The capacitor element is formed using a support layer.

Abstract: Alignment data from an exposure tool suitable for exposing a plurality of semiconductor wafers are provided, the alignment data including alignment values applied by the exposure tool to respective ones of the plurality of semiconductor wafers at a plurality of measured positions.

Abstract: A first and a second phase-shifting, semitransparent layer are formed on a substrate. The layers are patterned lithographically to form first elevated structure elements on the substrate with a first degree of transmission and second structure elements with a second degree of transmission, where the second degree of transmission is different from the first degree of transmission. Memory products can be produced with high resolution and high dimensional accuracy when the structure elements are transferred to a semiconductor substrate, by virtue of dense structure arrangements being represented by the structure elements with a high degree of transmission of more than 30% and, on the same mask, isolated structure arrangements having a low density being represented by the structure elements with a lower degree of transmission.

Abstract: Photolithography using polarized light is disclosed. For example, a method includes transmitting the light through a mask having a first area with a first class of patterns and a second area with a second class of patterns thereby generating a virtual image. The virtual image is exposed into a resist layer. The polarization of the light passing the first area is modified while the light passing the mask.

Abstract: A method of forming an integrated circuit having a capacitor is disclosed. In one embodiment, the method includes forming a capacitor element with a first electrode, a dielectric layer and a second electrode. The capacitor element is formed using a support layer.

Abstract: A first and a second phase-shifting, semitransparent layer are formed on a substrate. The layers are patterned lithographically to form first elevated structure elements on the substrate with a first degree of transmission and second structure elements with a second degree of transmission, where the second degree of transmission is different from the first degree of transmission. Memory products can be produced with high resolution and high dimensional accuracy when the structure elements are transferred to a semiconductor substrate, by virtue of dense structure arrangements being represented by the structure elements with a high degree of transmission of more than 30% and, on the same mask, isolated structure arrangements having a low density being represented by the structure elements with a lower degree of transmission.

Abstract: A mask having at least one pair of mutually parallel slit structures, separated from one another by a distance in an opaque layer, is introduced into a mask mount. The mask side having the layer is turned to the illumination source. During mask exposure, a far field interference pattern is produced on the opposite rear side of the mask through the slit structures and projected into the substrate plane through a lens system of the exposure apparatus. The interference pattern is recorded as an image signal through exposure of a photosensitive layer of a wafer or by sensors on a movable substrate holder. Through determination of the contrast and subsequent Fourier transformation thereof as a function of distance between slits, the light distribution of the illumination can be derived. An advantageous mask has a multiplicity of slit structure pairs disposed with different angles with respect to a preferred direction and different distances in matrix form thereon.

Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.

Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.