Patents by Inventor Wolfgang Lehnert

Wolfgang Lehnert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a semiconductor including a foreign material layer
    Patent number: 7947569
    Abstract: A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: May 24, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Anton Mauder, Frank Pfirsch, Rudolf Berger, Stefan Sedlmaier, Wolfgang Lehnert, Raimund Foerg
  • METHOD OF MAKING A DEVICE INCLUDING A CAPACITIVE STRUCTURE
    Publication number: 20100273307
    Abstract: A method for making a device including a capacitive structure is disclosed. One embodiment provides a carrier layer having a surface. A first dielectric layer is formed on the surface. A silicon layer including silicon grains is formed on the first dielectric layer using a deposition process. A second dielectric layer is formed on the second silicon layer. A layer of an electrically conductive material is formed on the dielectric layer. A temperature process for heating at least the first dielectric layer is performed. The temperature and duration of the temperature process is selected such that the first dielectric layer is modified so that the silicon layer is electrically connected to the carrier layer.
    Type: Application
    Filed: April 27, 2009
    Publication date: October 28, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Stefan Sedlmaier, Wolfgang Lehnert, Klemens Pruegl
  • METHOD FOR PRODUCING A SEMICONDUCTOR INCLUDING A MATERIAL LAYER
    Publication number: 20090325361
    Abstract: A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.
    Type: Application
    Filed: June 30, 2008
    Publication date: December 31, 2009
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Anton Mauder, Frank Pfirsch, Rudolf Berger, Stefan Sedlmaier, Wolfgang Lehnert, Raimund Foerg
  • Semiconductor Device and Method for Producing the Same
    Publication number: 20090122460
    Abstract: A semiconductor device includes a semiconductor layer with a first electrode formed by a sintered, conductive, porous granulate and formed in or on the semiconductor layer or in or on at least one insulating layer arranged on the semiconductor layer; furthermore dielectric material covering the surface of the sintered, conductive, porous granulate, and a second electrode at least partially covering the dielectric material, wherein the dielectric material electrically insulates the second electrode from the first electrode.
    Type: Application
    Filed: November 12, 2007
    Publication date: May 14, 2009
    Inventors: Alexander Gschwandtner, Stefan Pompl, Wolfgang Lehnert, Raimund Foerg