Patents by Inventor Wolfgang R. Aderhold
Wolfgang R. Aderhold has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200373212Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.Type: ApplicationFiled: August 10, 2020Publication date: November 26, 2020Inventors: Wolfgang R. ADERHOLD, Aaron Muir HUNTER, Joseph M. RANISH
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Patent number: 10741457Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.Type: GrantFiled: June 29, 2017Date of Patent: August 11, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Wolfgang R. Aderhold, Aaron Muir Hunter, Joseph M. Ranish
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Publication number: 20200251362Abstract: A method for controlling temperature in a thermal processing chamber includes determining temperature sensitivity profiles of one or more heating elements or zones for a substrate based on measurements of the substrate. The method also includes selecting a temperature offset value for each of the one or more heating elements or zones. The method also includes simulating the adjustment of each of the one or more zone offset values to a respective final adjusting value that achieves a predetermined goal. The method further includes adjusting the temperature offset values for each of the one or more heating elements to the respective final adjusted values.Type: ApplicationFiled: February 3, 2020Publication date: August 6, 2020Inventors: Ole LUCKNER, Shankar MUTHUKRISHNAN, Wolfgang R. ADERHOLD
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Publication number: 20200161134Abstract: Methods and apparatus for forming doped material layers in semiconductor devices using an integrated selective monolayer doping (SMLD) process. A concentration of dopant is deposited on a material layer using the SMLD process and the concentration of dopant is then annealed to diffuse the concentration of dopant into the material layer. The SMLD process conforms the concentration of dopant to a surface of the material layer and may be performed in a single CVD chamber. The SMLD process may also be repeated to further alter the diffusion parameters of the dopant into the material layer. The SMLD process is compatible with p-type dopant species and n-type dopant species.Type: ApplicationFiled: September 20, 2019Publication date: May 21, 2020Inventors: BENJAMIN COLOMBEAU, WOLFGANG R. ADERHOLD, ANDY LO, YI-CHIAU HUANG
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Publication number: 20200149968Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. In one or more embodiments, a process chamber includes chamber body, a window disposed on a first portion of the chamber body, a chamber bottom, and a shield disposed on a second portion of the chamber body. The shield has a flat surface facing the window to reduce reflected radiant energy to a back side of a substrate disposed in the process chamber during operation. The process chamber further includes an edge support for supporting the substrate and a cooling member disposed on the chamber bottom. The cooling member is disposed in proximity of the edge support to cool the edge support during low temperature operation in order to improve the temperature uniformity of the substrate.Type: ApplicationFiled: January 14, 2020Publication date: May 14, 2020Inventors: Lara HAWRYLCHAK, Samuel C. HOWELLS, Wolfgang R. ADERHOLD, Leonid M. TERTITSKI, Michael LIU, Dongming IU, Norman L. TAM, Ji-Dih HU
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Patent number: 10571337Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. In one example, a process chamber includes chamber body, a window disposed on a first portion of the chamber body, a chamber bottom, and a shield disposed on a second portion of the chamber body. The shield has a flat surface facing the window to reduce reflected radiant energy to a back side of a substrate disposed in the process chamber during operation. The process chamber further includes an edge support for supporting the substrate and a cooling member disposed on the chamber bottom. The cooling member is disposed in proximity of the edge support to cool the edge support during low temperature operation in order to improve the temperature uniformity of the substrate.Type: GrantFiled: July 28, 2017Date of Patent: February 25, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Lara Hawrylchak, Samuel C. Howells, Wolfgang R. Aderhold, Leonid M. Tertitski, Michael Liu, Dongming Iu, Norman L. Tam, Ji-Dih Hu
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Publication number: 20200032386Abstract: A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.Type: ApplicationFiled: July 23, 2019Publication date: January 30, 2020Inventors: Wolfgang R. ADERHOLD, Abhilash J. MAYUR
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Patent number: 10330535Abstract: Embodiments disclosed herein provide an RTP system for processing a substrate. An RTP chamber has a radiation source configured to deliver radiation to a substrate disposed within a processing volume. One or more pyrometers are coupled to the chamber body opposite the radiation source. In one example, the radiation source is disposed below the substrate and the pyrometers are disposed above the substrate. In another example, the radiation source is disposed above the substrate and the pyrometers are disposed below the substrate. The substrate may be supported in varying manners configured to reduce physical contact between the substrate support and the substrate. An edge ring and shield are disposed within the processing volume and are configured to reduce or eliminate background radiation from interfering with the pyrometers. Additionally, an absorbing surface may be coupled to the chamber body to further reduce background radiation interference.Type: GrantFiled: August 4, 2017Date of Patent: June 25, 2019Assignee: APPLIED MATERIALS, INC.Inventor: Wolfgang R. Aderhold
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Publication number: 20180340832Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. In one example, a process chamber includes chamber body, a window disposed on a first portion of the chamber body, a chamber bottom, and a shield disposed on a second portion of the chamber body. The shield has a flat surface facing the window to reduce reflected radiant energy to a back side of a substrate disposed in the process chamber during operation. The process chamber further includes an edge support for supporting the substrate and a cooling member disposed on the chamber bottom. The cooling member is disposed in proximity of the edge support to cool the edge support during low temperature operation in order to improve the temperature uniformity of the substrate.Type: ApplicationFiled: July 28, 2017Publication date: November 29, 2018Inventors: Lara HAWRYLCHAK, Samuel C. HOWELLS, Wolfgang R. ADERHOLD, Leonid M. TERTITSKI, Michael LIU, Dongming IU, Norman L. TAM, Ji-Dih HU
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Publication number: 20180061949Abstract: Implementations of the present disclosure relate to semiconductor devices such as transistors used for amplifying or switching electronic signals. In one implementation, an integrated circuit is provided. The integrated circuit comprises a first transistor having a first conductivity type, the first transistor comprising a first gate, an first source region and a first drain region disposed on opposite sides of the first gate, and a second transistor having a second conductivity type opposite from the first conductivity type of the first transistor, the second transistor comprising a second gate, a second source region and a second drain region disposed on opposite sides of the second gate, wherein the second drain region of the second transistor is abutted against the first drain region of the first transistor.Type: ApplicationFiled: September 11, 2017Publication date: March 1, 2018Inventor: Wolfgang R. ADERHOLD
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Publication number: 20170328775Abstract: Embodiments disclosed herein provide an RTP system for processing a substrate. An RTP chamber has a radiation source configured to deliver radiation to a substrate disposed within a processing volume. One or more pyrometers are coupled to the chamber body opposite the radiation source. In one example, the radiation source is disposed below the substrate and the pyrometers are disposed above the substrate. In another example, the radiation source is disposed above the substrate and the pyrometers are disposed below the substrate. The substrate may be supported in varying manners configured to reduce physical contact between the substrate support and the substrate. An edge ring and shield are disposed within the processing volume and are configured to reduce or eliminate background radiation from interfering with the pyrometers. Additionally, an absorbing surface may be coupled to the chamber body to further reduce background radiation interference.Type: ApplicationFiled: August 4, 2017Publication date: November 16, 2017Inventor: Wolfgang R. ADERHOLD
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Publication number: 20170309529Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.Type: ApplicationFiled: June 29, 2017Publication date: October 26, 2017Inventors: Wolfgang R. ADERHOLD, Aaron Muir HUNTER, Joseph M. RANISH
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Patent number: 9759615Abstract: Embodiments disclosed herein provide an RTP system for processing a substrate. An RTP chamber has a radiation source configured to deliver radiation to a substrate disposed within a processing volume. One or more pyrometers are coupled to the chamber body opposite the radiation source. In one example, the radiation source is disposed below the substrate and the pyrometers are disposed above the substrate. In another example, the radiation source is disposed above the substrate and the pyrometers are disposed below the substrate. The substrate may be supported in varying manners configured to reduce physical contact between the substrate support and the substrate. An edge ring and shield are disposed within the processing volume and are configured to reduce or eliminate background radiation from interfering with the pyrometers. Additionally, an absorbing surface may be coupled to the chamber body to further reduce background radiation interference.Type: GrantFiled: October 24, 2014Date of Patent: September 12, 2017Assignee: APPLIED MATERIALS, INC.Inventor: Wolfgang R. Aderhold
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Patent number: 9728471Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.Type: GrantFiled: April 8, 2014Date of Patent: August 8, 2017Assignee: Applied Materials, Inc.Inventors: Wolfgang R. Aderhold, Aaron Hunter, Joseph M. Ranish
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Publication number: 20170148726Abstract: A semiconductor processing method and semiconductor device are described. The processing method includes forming a p-doped germanium structure on a substrate, annealing the p-doped germanium structure using pulses of laser radiation, and forming a titanium structure in direct contact with the p-doped germanium structure.Type: ApplicationFiled: November 2, 2016Publication date: May 25, 2017Inventors: Stephen MOFFATT, Abhilash J. MAYUR, Theodore P. MOFFITT, Aaron Muir HUNTER, Shashank SHARMA, Bruce E. ADAMS, Samuel C. HOWELLS, Douglas E. HOLMGREN, Wolfgang R. ADERHOLD
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Publication number: 20170084706Abstract: Embodiments of the present disclosure generally relate to superactivation of semiconductor contact layers. In some embodiments, a layer stack includes a source drain layer and a semiconductor contact layer disposed on the source drain layer. A first surface of the semiconductor contact layer contacts the source drain layer. The layer stack further includes a metal layer disposed on the contact layer. A surface of the metal layer contacts a second surface of the semiconductor contact layer. In some embodiments, a method of superactivating a contact layer includes forming a contact layer on a source drain layer, laser pulsing the contact layer at a second contact layer surface, and crystallizing the contact layer to form a crystalline contact layer.Type: ApplicationFiled: September 13, 2016Publication date: March 23, 2017Inventor: Wolfgang R. ADERHOLD
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Publication number: 20160104771Abstract: Implementations of the present disclosure relate to semiconductor devices such as transistors used for amplifying or switching electronic signals. In one implementation, an integrated circuit is provided. The integrated circuit comprises a first transistor having a first conductivity type, the first transistor comprising a first gate, an first source region and a first drain region disposed on opposite sides of the first gate, and a second transistor having a second conductivity type opposite from the first conductivity type of the first transistor, the second transistor comprising a second gate, a second source region and a second drain region disposed on opposite sides of the second gate, wherein the second drain region of the second transistor is abutted against the first drain region of the first transistor.Type: ApplicationFiled: September 28, 2015Publication date: April 14, 2016Inventor: Wolfgang R. ADERHOLD
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Patent number: 9245768Abstract: Methods for controlling substrate uniformity in a thermal processing chamber include a measuring process to provide temperature-related quantities across a radius of a substrate, correlating substrate properties with processing parameters to simulate deformation of the substrate at various radial distances over a temperature range, a thermal process so that temperature of at least one reference region within the substrate matches a target set point temperature, measuring a temperature of at least one reference region as the substrate rotates, measuring deformation of the substrate as the substrate rotates, correlating measured temperatures of at least one reference region with simulated deformation of the substrate and measured temperature-related quantities of the substrate to calculate a simulated shape change of the substrate over a temperature range, tuning substrate flatness by adjusting lamp temperature profile across the substrate based on simulated shape change of the substrate and actual shape of theType: GrantFiled: December 17, 2013Date of Patent: January 26, 2016Assignee: APPLIED MATERIALS, INC.Inventor: Wolfgang R. Aderhold
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Publication number: 20150311067Abstract: Embodiments of the present disclosure relate to methods for processing a substrate. In one embodiment, the method includes forming a dielectric layer over a substrate, wherein the dielectric layer has a dielectric value of about 3.9 or greater, heating the substrate to a first temperature of about 600 degrees Celsius or less by a heater of a substrate support disposed within a process chamber, and incorporating nitrogen into the dielectric layer in the process chamber by annealing the dielectric layer at a second temperature between about 650 and about 1450 degrees Celsius in an ambient nitrogen environment, wherein the annealing is performed on the order of millisecond scale.Type: ApplicationFiled: April 24, 2014Publication date: October 29, 2015Inventors: Shashank SHARMA, Jau-Jiun CHEN, Wolfgang R. ADERHOLD, Kai NG, Houda GRAOUI, Shankar MUTHUKRISHNAN, Abhilash J. MAYUR, Gia PHAM
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Publication number: 20150170934Abstract: Methods for controlling substrate uniformity in a thermal processing chamber include a measuring process to provide temperature-related quantities across a radius of a substrate, correlating substrate properties with processing parameters to simulate deformation of the substrate at various radial distances over a temperature range, a thermal process so that temperature of at least one reference region within the substrate matches a target set point temperature, measuring a temperature of at least one reference region as the substrate rotates, measuring deformation of the substrate as the substrate rotates, correlating measured temperatures of at least one reference region with simulated deformation of the substrate and measured temperature-related quantities of the substrate to calculate a simulated shape change of the substrate over a temperature range, tuning substrate flatness by adjusting lamp temperature profile across the substrate based on simulated shape change of the substrate and actual shape of theType: ApplicationFiled: December 17, 2013Publication date: June 18, 2015Inventor: Wolfgang R. ADERHOLD