Abstract: In response to receiving HDL file(s) that specify a plurality of hierarchically arranged design entities defining a design to be simulated and that specify an instrumentation entity for monitoring simulated operation of the design, an instrumented simulation executable model of the design is built. Building the model includes compiling the HDL file(s) specifying the plurality of hierarchically arranged design entities defining the design and instantiating at least one instance of each of the plurality of hierarchically arranged design entities, and further includes instantiating an instance of the instrumentation entity within an instance of a particular design entity among the plurality of design entities and, based upon a reference in an instrumentation statement in the one or more HDL files, logically attaching an input of the instance of the instrumentation entity to an input source within the design that is outside the scope of the particular design entity.

Abstract: One or more hardware description language (HDL) files describe a plurality of hierarchically arranged design entities defining a digital design to be simulated and a plurality of configuration entities not belonging to the digital design that logically control settings of a plurality of configuration latches in the digital design. The HDL file(s) are compiled to obtain a simulation executable model of the digital design and an associated configuration database. The compiling includes parsing a configuration statement that specifies an association between an instance of a configuration entity and a specified configuration latch, determining whether or not the specified configuration latch is described in the HDL file(s), and if not, creating an indication in the configuration database that the instance of the configuration latch had a specified association to a configuration latch to which it failed to bind.

Abstract: According to a method of data processing, a data set including at least one entry specifying a signal group by a predetermined signal group name is received by a data processing system. In response to receipt of the data set, the entry in the data set is processed to identify the signal group name. Signal group information associated with an event trace file containing simulation results is accessed to determine signal names of multiple signals that are members of the signal group. Simulation results from the event trace file that are associated with instances of the multiple signals are then included within a presentation of simulation results.

Abstract: The invention relates to a vertical integrated component, a component arrangement and a method for production of a vertical integrated component. The vertical integrated component has a first electrical conducting layer, a mid layer, partly embodied from dielectric material on the first electrical conducting layer, a second electrical conducting layer on the mid layer and a nanostructure integrated in a through hold introduced in the mid layer. A first end section of the nanostructure is coupled to the first electrical conducting layer and a second end section is coupled to the second electrical conducting layer. The mid layer includes a third electrical conducting layer between two adjacent dielectric partial layers, the thickness of which is less than the thickness of at least one of the dielectric partial layers.

Abstract: Embodiments of the invention relate generally to a method for manufacturing an integrated circuit, a method for manufacturing a cell arrangement, an integrated circuit, a cell arrangement, and a memory module. In an embodiment of the invention, a method for manufacturing an integrated circuit having a cell arrangement is provided, including forming at least one semiconductor fin structure having an area for a plurality of fin field effect transistors, wherein the area of each fin field effect transistor includes a first region having a first fin structure width, a second region having a second fin structure width, wherein the second fin structure width is smaller than the first fin structure width. Furthermore, a plurality of charge storage regions are formed on or above the second regions of the semiconductor fin structure.

Abstract: One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.

Abstract: An integrated circuit including a vertical transistor and method of manufacturing. In one embodiment a vertical transistor is formed in a pillar of a semiconductor substrate. A buried conductive line is separated from the semiconductor substrate by a first insulating layer in a first portion and is electrically coupled to a buried source/drain region of the vertical transistor through a contact structure. A second insulating layer is arranged above and adjacent to the contact structure. At least one of the first and second insulating layers includes a dopant. A doped region is formed in the semiconductor substrate at an interface to the at least one insulating layer. The doped region has a dopant concentration higher than a substrate dopant concentration.

Abstract: A nanotube array and a method for producing a nanotube array. The nanotube array has a substrate, a catalyst layer, which includes one or more subregions, on the surface of the substrate and at least one nanotube arranged on the surface of the catalyst layer, parallel to the surface of the substrate. The at least one nanotube being arranged parallel to the surface of the substrate results in a planar arrangement of at least one nanotube. Therefore, the nanotube array of the invention is suitable for coupling to conventional silicon microelectronics. Therefore, according to the invention it is possible for a nanotube array to be electronically coupled to macroscopic semiconductor electronics. Furthermore, the nanotube array according to the invention may have an electrically insulating layer between the substrate and the catalyst layer.

Abstract: According to a method of data processing, a data set including at least one entry specifying a signal group by a predetermined signal group name is received by a data processing system. In response to receipt of the data set, the entry in the data set is processed to identify the signal group name. Signal group information associated with an event trace file containing simulation results is accessed to determine signal names of multiple signals that are members of the signal group. Simulation results from the event trace file that are associated with instances of the multiple signals are then included within a presentation of simulation results.

Abstract: Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer, which is applied on the carrier layer and has at least two regions each having a different thickness, thereby forming a stepped surface of the insulator layer, and a semiconductor layer, which is applied to the stepped surface of the insulator layer and is formed at least partially epitaxially, wherein the semiconductor layer has a planar surface which is opposite to the stepped surface of the insulator layer. Transistors are formed on the semiconductor layer.

Abstract: A semiconductor memory component comprises at least one memory cell. The memory cell comprises a semiconductor body comprised of a body region, a drain region and a source region, a gate dielectric, and a gate electrode. The body region comprises a first conductivity type and a depression between the source and drain regions, and the source and drain regions comprise a second conductivity type. The gate electrode is arranged at least partly in the depression and is insulated from the body, source, and drain regions by the gate dielectric. The body region further comprises a first continuous region with a first dopant concentration and a second continuous region with a second dopant concentration greater than the first dopant concentration. The first continuous region adjoins the drain region, the depression and the source region, and the second region is arranged below the first region and adjoins the first region.

Abstract: A method, system and computer program product for modeling variables in subprograms of a HDL program. A subprogram is provided with an initial value of a variable of an element being modeled and the subprogram is stored in memory of a data processing system. In response to a subprogram call, a copy of the stored subprogram is provided to the requesting HDL program. During execution, the initial value of the variable in the provided copy of the subprogram may be modified by the HDL program, but the value retains unchanged in the stored subprogram.

Abstract: A method and system for providing centralized access to count event information from testing of a hardware simulation model within a batch simulation farm which includes simulation clients and an instrumentation server. Count event data for said hardware simulation model is received by the instrumentation server from one or more simulation clients. A first and a second counter report are generated for the hardware simulation model, in which the first and second counter reports are derived from the count event data received by the instrumentation server. The first counter report is compared to the second counter report, and responsive to this comparison, a counter difference report is generated within the instrumentation server that conveys count event trends associated with the simulation model under different simulation testcases.

Abstract: An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor and the electrode is increased without increasing the lateral dimensions using partial regions of the semiconductor and/or of the electrode that extend through a transition layer between the semiconductor and electrode.

Abstract: According to a method of simulation processing, a simulation model is received that includes a plurality of design entity instances modeling a digital system and one or more instrumentation entity instances, separate from the plurality of design entity instances, that generate instances of instrumentation events for testing purposes during simulation. In response to receiving an exclusion list identifying at least one instance of one or more instrumentation events to be removed from the simulation model, at least one instance of the one or more instrumentation events and associated logic elements are removed from the one or more instrumentation entity instances of the simulation model prior to simulation, such that a more compact simulation model is obtained.

Abstract: According to a method of specifying a trace array for simulation of a digital design, one or more entities within a simulation model are specified with one or more statements in one or more hardware description language (HDL) files. In addition, a trace array for storing data generated through simulation of the simulation model is specified in one or more statements in the one or more HDL files. The HDL files may subsequently be processed to create a simulation model containing at least one design entity and a trace array within the design entity for storing trace data regarding specified signals of interest.

Abstract: A semiconductor memory having a multitude of memory cells (21-1), the semiconductor memory having a substrate (1), at least one wordline (5-1), a first (15-1) and a second line (15-2; 16-1), wherein each of the multitude of memory cells (21-1) comprises a first doping region (6) disposed in the substrate (1), a second doping region (7) disposed in the substrate (1), a channel region (22) disposed in the substrate (1) between the first doping region (6) and the second doping region (7), a charge-trapping layer stack (2) disposed on the substrate (1), on the channel region (22), on a portion of the first doping region (6) and on a portion of the second doping region (7). Each memory cell (21-1) further comprises a conductive layer (3) disposed on the charge-trapping layer stack (2), wherein the conductive layer (3) is electrically floating. A dielectric layer (4) is disposed on a top surface of the conductive layer (3) and on sidewalls (23) of the conductive layer (3).

Abstract: According to one method of simulation processing, instrumentation code, such as an runtime executive (rtx), receives one or more statements describing an count event and identifying the count event as an outlying count event. While simulating a design utilizing the HDL simulation model, occurrences of the outlying count event are counted to obtain a count event value. Simulation result data obtained from simulating the design is then received and processed. In the processing, the count event value is recorded within a data storage subsystem responsive to a determination of whether or not the count event value of the outlying count event exceeds a previously recorded count event value.

Abstract: In a hardware definition language (HDL) file among one or more files, one or more design entities containing a functional portion of a digital system are specified. The one or more design entities logically contain a plurality of latches having a respective plurality of different possible latch values that each corresponds to a different configuration of the functional portion of the digital system. With one or more statements in the one or more files, a multi-level Dial tree is defined that includes a selective control Dial (SCDial) entity at an upper level that is associated with at least one design entity. The SCDial entity has a Dial input, a plurality of Dial outputs coupled to inputs of the plurality of lower level Dials, and a mapping table indicating a mapping between each of a plurality of possible input values of the Dial input and a respective one of a plurality of sets of output values for the plurality of Dial outputs.

Abstract: According to a method of simulation processing, an instrumented simulation executable model of a design is built by compiling one or more hardware description language (HDL) files specifying one or more design entities within the design and one or more instrumentation entities and instantiating instances of the one or more instrumentation entities within instances of the one or more design entities. Operation of the design is then simulated utilizing the instrumented simulation executable model. Simulating operation includes each of multiple instantiations of the one or more instrumentation entities generating a respective external phase signal representing an occurrence of a particular phase of operation and instrumentation combining logic generating from external phase signals of the multiple instantiations of the one or more instrumentation entities an aggregate phase signal representing an occurrence of the particular phase.