Abstract: The present invention relates to radiolabeled compounds of formula I wherein either A, B, R1, R2, is labeled with a radionuclide selected from 3H, C and 18F and its use for imaging alpha synuclein and/or Abeta deposits in mammals.

Abstract: A system comprising a ground drilling device for moving a drill string for the insertion of an earth borehole into the ground, wherein a detection device is provided which is designed to detect the drill string at the end (a) in the region of the ground drilling device and/or (b) in the region of a target pit of the earth borehole to be created.

Abstract: A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Abstract: A method for operating an optical apparatus (100A, 100B, 200), having a structural element (201) which is arranged in a residual gas atmosphere (RGA) of the apparatus and which is formed at least partly from an element material subjected to a chemical reduction process and/or an etching process with a plasma component (PK) present in the residual gas atmosphere includes: feeding (S2) a gas component (GK) that at least partly suppresses the reduction process depending on a detected suppression extent (UM) for a suppression of the etching process and/or reduction process by the suppressing gas component in the residual gas atmosphere; and detecting (S1) the suppression extent with a sensor unit (208) arranged in the residual gas atmosphere. The sensor unit includes a sensor material section (211) composed of a sensor material and exhibiting a sensor section property that is measurable under the influence of the suppressing gas component.

Abstract: A drill string section of a drill string for drilling in the ground having arranged on the outside of the drill string section at least one marking by means of which abrasion can be recognized.

Abstract: In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Abstract: A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Abstract: A thermal overcurrent circuit breaker having a switch housing in which a thermal expansion element and a snap-action switching mechanism, which is coupled to the thermal expansion element and can be manually operated, and also a moving contact, which interacts with the snap-action switching mechanism, and a fixed contact are arranged, the fixed contact being connected to a first connection rail while contact is made with the moving contact by a second connection rail by means of the thermal expansion element. The switch housing has a number of connection chambers in which in each case one of the connection rails is arranged, wherein a two-limb spring element for making clamping contact with a connection line, which is guided into the connection chamber via a first housing opening and has the connection rail, is arranged in each connection chamber.

Abstract: In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Abstract: Compounds of formula I defined herein act both as muscarinic receptor antagonists and beta2 adrenergic receptor agonists and are useful for the prevention and/or treatment of broncho-obstructive or inflammatory diseases.

Abstract: An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).

Abstract: An optical assembly includes an optical element (13), configured in particular for the reflection of EUV radiation (4), and a protective element (30) for protecting a surface (31) of the optical element (13, 14) from contaminating substances (P). The protective element (30) has a membrane (33a-c) and a frame (34) on which the membrane (33a-c) is mounted. The membrane is formed by a plurality of membrane segments (33a, 33b, 33c) which respectively protect a partial region (T) of the surface (31) of the optical element (13) from the contaminating substances (P). The optical assembly can form part of an overall optical arrangement, for example an EUV lithography system.

Abstract: An apparatus configured to sense presence and motion in a monitored space is presented. The apparatus includes a dual-element assembly with a first thermal sensing element and a second thermal sensing element configured to produce a direct current output that is sustained at a level substantially proportional to an amount of thermal energy being received at the thermal sensing elements. A lens array (or equivalent optics) is coupled to the elements, having a plurality of lenses directing incident thermal energy from a plurality of optically-defined spatial zones onto the sensing elements. An electronic circuitry is configured to read a resulting signal of the dual-element assembly and an individual output signal of each the first thermal sensing element and the second thermal sensing element.

Abstract: Compounds of formula I, defined herein, act both as muscarinic receptor antagonists and beta2 adrenergic receptor agonists and are useful for treating broncho-obstructive and inflammatory diseases.

Abstract: The invention relates to a transfer material for the dye-sublimation transfer method of an ink jet printing image, comprising a support and an ink receiving layer on the front side of the transfer material, wherein the ink-receiving layer is porous and the transfer material contains a barrier layer which is disposed either on the rear side of the transfer material or between the support and the porous ink-receiving layer.

Abstract: Compounds of formula I defined herein act both as muscarinic receptor antagonists and beta2 adrenergic receptor agonists and are useful for the prevention and/or treatment of broncho-obstructive or inflammatory diseases.

Abstract: A method for producing rod lenses with an enveloping diameter of the rod lens face of up to 200 mm and an edge length of at least 800 mm. The method is characterized in that fabrication is performed from a cylindrical rod lens element made from synthetic quartz glass material configured as a fused silica ingot. This is performed using a flame hydrolysis method with a direct one stage deposition process of SIOx particles from a flame stream onto die that rotates and is moveable in a linear manner with respect to the flame stream.

Abstract: An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).

Abstract: Compounds of formula I, defined herein, act both as muscarinic receptor antagonists and beta2 adrenergic receptor agonists and are useful for treating diseases of the respiratory tract.

Abstract: Compounds of formula I, defined herein, act both as muscarinic receptor antagonists and beta2 adrenergic receptor agonists and are useful for treating broncho-obstructive and inflammatory diseases.