Patents by Inventor Wolfgang Schwartz
Wolfgang Schwartz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11676993Abstract: In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.Type: GrantFiled: September 8, 2020Date of Patent: June 13, 2023Assignee: Texas Instruments IncorporatedInventors: Christoph Andreas Othmar Dirnecker, Wolfgang Schwartz, Doug Weiser, Joel Martin Halbert, Joseph Anthony DeSantis, Karsten Jens Spinger
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Publication number: 20200403061Abstract: In one example an electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate, the first resistive layer having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate, the second resistive layer having a second sheet resistance different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.Type: ApplicationFiled: September 8, 2020Publication date: December 24, 2020Inventors: Christoph Andreas Othmar Dirnecker, Wolfgang Schwartz, Doug Weiser, Joel Martin Halbert, Joseph Anthony DeSantis, Karsten Jens Spinger
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Patent number: 10770538Abstract: A method of forming an electronic device includes forming an opening through a dielectric layer located over a first resistive layer, the first resistive layer having a first sheet resistance. A second resistive layer is deposited over the dielectric layer and into the opening. The second resistive layer has a second sheet resistance different from the first sheet resistance. A portion of the second resistive layer is removed, thereby forming first and second noncontiguous portions of the second resistive layer, wherein the second portion of the second resistive layer contacts the first resistive layer.Type: GrantFiled: May 10, 2018Date of Patent: September 8, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christoph Andreas Othmar Dirnecker, Wolfgang Schwartz, Doug Weiser, Joel Martin Halbert, Joseph Anthony DeSantis, Karsten Jens Spinger
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Publication number: 20180261664Abstract: An electronic device includes a first resistor and a second resistor. The first resistor includes a first resistive layer located over a substrate and having a first sheet resistance. The second resistor includes a first portion of a second resistive layer located over the substrate and having a second sheet resistance that is different from the first sheet resistance. The first resistive layer is located between the substrate and a second noncontiguous portion of the second resistive layer.Type: ApplicationFiled: May 10, 2018Publication date: September 13, 2018Inventors: Christoph Andreas Othmar Dirnecker, Wolfgang Schwartz, Doug Weiser, Joel Martin Halbert, Joseph Anthony DeSantis, Karsten Jens Spinger
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Patent number: 10032868Abstract: A method for making a super ? NPN (SBNPN) transistor includes depositing a tetraethyl orthosilicate (TEOS) layer on a P type epitaxial layer; depositing a nitride layer on the TEOS layer; patterning an emitter region of the SBNPN transistor by selectively etching away portions of the nitride layer and the TEOS layer; depositing a second TEOS layer on top of the nitride layer, along sides of the nitride layer and the TEOS layer, and on top of the P type epitaxial layer; and implanting the P type epitaxial layer through the second TEOS layer with N type ions to form the emitter region of the SBNPN transistor.Type: GrantFiled: September 9, 2016Date of Patent: July 24, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Bernhard Benna, Wolfgang Schwartz, Berthold Georg Staufer
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Patent number: 9991329Abstract: An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.Type: GrantFiled: July 13, 2016Date of Patent: June 5, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Christoph Andreas Othmar Dirnecker, Wolfgang Schwartz, Doug Weiser, Joel Martin Halbert, Joseph Anthony DeSantis, Karsten Jens Spinger
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Publication number: 20180076283Abstract: A method for making a super ? NPN (SBNPN) transistor includes depositing a tetraethyl orthosilicate (TEOS) layer on a P type epitaxial layer; depositing a nitride layer on the TEOS layer; patterning an emitter region of the SBNPN transistor by selectively etching away portions of the nitride layer and the TEOS layer; depositing a second TEOS layer on top of the nitride layer, along sides of the nitride layer and the TEOS layer, and on top of the P type epitaxial layer; and implanting the P type epitaxial layer through the second TEOS layer with N type ions to form the emitter region of the SBNPN transistor.Type: ApplicationFiled: September 9, 2016Publication date: March 15, 2018Inventors: Bernhard BENNA, Wolfgang SCHWARTZ, Berthold Georg STAUFER
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Publication number: 20180019297Abstract: An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.Type: ApplicationFiled: July 13, 2016Publication date: January 18, 2018Inventors: Christoph Andreas Othmar Dirnecker, Wolfgang Schwartz, Doug Weiser, Joel Martin Halbert, Joseph Anthony DeSantis, Karsten Jens Spinger
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Patent number: 8932942Abstract: Method of forming an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer. The method comprises etching a cavity into the top silicon layer and the insulator layer. A selective epitaxial step is performed for growing an epitaxial layer of silicon inside the cavity up to the surface of the top silicon layer. An electrical device comprising an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer formed according to the inventive method.Type: GrantFiled: March 23, 2010Date of Patent: January 13, 2015Assignee: Texas Instruments Deutschland GmbHInventors: Philipp Steinmann, Manfred Schiekofer, Michael Kraus, Thomas Scharnagl, Wolfgang Schwartz
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Publication number: 20120205775Abstract: The invention relates to a method for manufacturing a semiconductor device. Accordingly, the trench processing sequence is changed and stress absorbing layers are applied. A shallow trench structure is etched. A deep trench structure is etched. A liner oxide is applied in the deep and shallow trench structure. An amorphous polysilicon liner is deposited on top of the liner oxide. A nitride liner is applied on top of the amorphous polysilicon liner, and the deep and shallow trenches are filled with oxide.Type: ApplicationFiled: February 14, 2012Publication date: August 16, 2012Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Alfred HAEUSLER, Wolfgang SCHWARTZ
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Patent number: 8093115Abstract: A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.Type: GrantFiled: September 21, 2010Date of Patent: January 10, 2012Assignee: Texas Instruments Deutschland GmbHInventors: Wolfgang Schwartz, Alfred Haeusler, Vladimir Frank Drobny
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Publication number: 20110070719Abstract: A method of manufacturing a semiconductor device, the method comprising: taking an SOI substrate comprising a bulk substrate, a buried insulating layer and an active layer, and implanting the bulk substrate from the side of and through the insulating layer and the active layer so as to generate an area having an increased doping concentration in the bulk substrate at the interface between the bulk substrate and the insulating layer.Type: ApplicationFiled: September 21, 2010Publication date: March 24, 2011Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Wolfgang SCHWARTZ, Alfred HAEUSLER, Vladimir Frank DROBNY
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Publication number: 20100244184Abstract: Method of forming an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer. The method comprises etching a cavity into the top silicon layer and the insulator layer. A selective epitaxial step is performed for growing an epitaxial layer of silicon inside the cavity up to the surface of the top silicon layer. An electrical device comprising an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer formed according to the inventive method.Type: ApplicationFiled: March 23, 2010Publication date: September 30, 2010Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Philipp STEINMANN, Manfred SCHIEKOFER, Michael KRAUS, Thomas SCHARNAGL, Wolfgang SCHWARTZ
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Publication number: 20100148308Abstract: A method of manufacturing a semiconductor device comprises growing or depositing an implantation oxide layer, implanting a dopant, activating the dopant, and removing the implantation oxide layer after the step of activating the dopant.Type: ApplicationFiled: December 15, 2009Publication date: June 17, 2010Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Alfred HAEUSLER, Wolfgang SCHWARTZ
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Patent number: 4899068Abstract: A comparison circuit (1), obtained according to MOS technology, for comparing two input voltages and comprising a differential amplifier (8). During a first time period, a first input (-) of the differential amplifier is supplied, via a first capacitor (9) and a switch (10), with a first input voltage (Ue). During a second time period, succeeding the first time period, a second input voltage (Ud) is supplied to the first input (-) of the amplifier by means of the first capacitor and a switch (11) of a switch arrangement (10, 11). The second input (+) of the differential amplifier is connected to a reference voltage during the first time period and its output is at that time connected to the first input and to the second input (+) of the amplifier via switches (12) and (16), respectively. The second input (+) of the differential amplifier is connected through a second capacitor (13) and a change-over device (14, 15) to the reference voltage source (17).Type: GrantFiled: July 18, 1988Date of Patent: February 6, 1990Assignee: U.S. Philips CorporationInventors: Hans-Peter Klose, Kurt Konig, Wolfgang Schwartz
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Patent number: 4862404Abstract: A digital circuit which receives a serial input signal and which suppresses fast signal variations. The digital circuit includes an integrator circuit (1) which generates a multi-bit signal by integration of the serial input signal. The output signal of the integrator circuit is applied to an evaluation circuit (2) which generates a serial output signal which assumes a first state when the multi-bit signal exceeds a first threshold value and a second state when the multi-bit signal is below a second threshold value.Type: GrantFiled: July 9, 1987Date of Patent: August 29, 1989Assignee: U.S. Philips CorporationInventors: Wolfgang Schwartz, Otto L. Warmuth, Claus D. Grzyb
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Patent number: 4414570Abstract: A circuit arrangement for extracting a field synchronizing signal from a television signal comprising binary switching stages. Herein, the duration of a broad field synchronizing pulse is determined because the peak value thereof is sampled with a clock signal, the period of the clock signal being significantly shorter than the duration of a line synchronizing pulse. For this purpose the frequency thereof may be the color sub-carrier frequency or a multiple thereof.Type: GrantFiled: October 7, 1981Date of Patent: November 8, 1983Assignee: U.S. Philips CorporationInventors: Dirk Braune, Wolfgang Schwartz
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Patent number: 3938582Abstract: An arrangement for the continuous manufacture of metal ingots by progressive crystallization below a slag layer in a mold open at the bottom. Below the bottom edge of the mold, there are distributed along the periphery of the mold, several blocking elements moveable in the direction of the ingot surface. The edges and surfaces facing the ingot are adapted to the shape of the ingot cross section, and the blocking elements may be sectors of an annular ring.Type: GrantFiled: September 12, 1974Date of Patent: February 17, 1976Assignee: Leybold Heraeus GmbH & Co. KGInventors: Wolfgang Schwartz-Domke, Helmut Grof, Anton Wamser