Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Abstract: A memory device includes a controller, a multiplexer, a deserializer, a data modifier, a memory cell array and an error detector. The controller is configured to generate signals in response to an address signal and a command signal. The multiplexer is configured to output a clock signal as internal data signals when the test mode signal is activated. The deserializer is configured to deserialize N bit values included in the internal data signals to generate deserialized signals. The data modifier is configured to invert the deserialized signals to generate bit line signals in response to an inversion control signal and the data modifying signals. The memory cell array is configured to store the bit line signals to memory cells corresponding to the address signal. The error detector is configured to determine if an error exists in signals read from the memory cells and to output an error detecting signal.

Abstract: A memory device includes a controller, a multiplexer, a deserializer, a data modifier, a memory cell array and an error detector. The controller is configured to generate signals in response to an address signal and a command signal. The multiplexer is configured to output a clock signal as internal data signals when the test mode signal is activated. The deserializer is configured to deserialize N bit values included in the internal data signals to generate deserialized signals. The data modifier is configured to invert the deserialized signals to generate bit line signals in response to an inversion control signal and the data modifying signals. The memory cell array is configured to store the bit line signals to memory cells corresponding to the address signal. The error detector is configured to determine if an error exists in signals read from the memory cells and to output an error detecting signal.

Abstract: Provided are a data receiver circuit and a method of adaptively controlling an equalization coefficient using the same. The data receiver circuit includes n sampling receivers, n decision feedback equalizer (DFE) circuits, and a data recovery circuit. The n sampling receivers are configured to sample an input signal and output n respective sampling signals in response to n respective clock signals. The n DFE circuits are configured to equalize the n respective sampling signals in response to a DFE control signal and generate n respective pre-recovery signals in response to the n equalized sampling signals and n respective previous pre-recovery signals, the DFE control signal for changing an equalization ability of the n DFE circuits. The data recovery circuit is configured to select one of the n respective pre-recovery signals, and output the selected n pre-recovery signal as a recovered input signal.

Abstract: A semiconductor device includes a selection circuit and a phase detector. The selection circuit, in response to a first selection signal output from a controller, outputs as a timing signal a first clock signal output from the controller or an output signal of a PLL using the first clock signal as a first input. The phase detector generates a voltage signal indicating a phase difference between a second clock signal output from the controller and the timing signal output from the selection circuit. The semiconductor device further includes a data port, a memory core storing data, and a serializer, in response to the timing signal output from the selection circuit, serializing data output from the memory core and outputting serialized data to the controller via the data port. The controller generates the first selection signal based on at least one of the voltage signal and the serialized data.

Abstract: Provided are a data receiver circuit and a method of adaptively controlling an equalization coefficient using the same. The data receiver circuit includes n sampling receivers, n decision feedback equalizer (DFE) circuits, and a data recovery circuit. The n sampling receivers are configured to sample an input signal and output n respective sampling signals in response to n respective clock signals. The n DFE circuits are configured to equalize the n respective sampling signals in response to a DFE control signal and generate n respective pre-recovery signals in response to the n equalized sampling signals and n respective previous pre-recovery signals, the DFE control signal for changing an equalization ability of the n DFE circuits. The data recovery circuit is configured to select one of the n respective pre-recovery signals, and output the selected n pre-recovery signal as a recovered input signal.

Abstract: A semiconductor device includes a selection circuit and a phase detector. The selection circuit, in response to a first selection signal output from a controller, outputs as a timing signal a first clock signal output from the controller or an output signal of a PLL using the first clock signal as a first input. The phase detector generates a voltage signal indicating a phase difference between a second clock signal output from the controller and the timing signal output from the selection circuit. The semiconductor device further includes a data port, a memory core storing data, and a serializer, in response to the timing signal output from the selection circuit, serializing the data output from the memory core and outputting serialized data to the controller via the data port. The first selection signal is generated by the controller based on at least one of the voltage signal and the data output to the controller via the data port.

Abstract: Provided is a duty cycle corrector including a low frequency detector detecting whether an input clock signal frequency is less than or greater than a predetermined frequency. If less than, a common mode control circuit controlling a common mode of a duty cycle correction amplifier amplifying the input clock signal is disabled. The duty cycle corrector may include a column address strobe (CAS) latency determination unit that determines whether a CAS latency is greater than or less than a predetermined value instead of the low frequency detector.

Abstract: Provided is a duty cycle corrector including a low frequency detector detecting whether an input clock signal frequency is less than or greater than a predetermined frequency. If less than, a common mode control circuit controlling a common mode of a duty cycle correction amplifier amplifying the input clock signal is disabled. The duty cycle corrector may include a column address strobe (CAS) latency determination unit that determines whether a CAS latency is greater than or less than a predetermined value instead of the low frequency detector.

Abstract: A semiconductor device includes a selection circuit and a phase detector. The selection circuit, in response to a first selection signal output from a controller, outputs as a timing signal a first clock signal output from the controller or an output signal of a PLL using the first clock signal as a first input. The phase detector generates a voltage signal indicating a phase difference between a second clock signal output from the controller and the timing signal output from the selection circuit. The semiconductor device further includes a data port, a memory core storing data, and a serializer, in response to the timing signal output from the selection circuit, serializing the data output from the memory core and outputting serialized data to the controller via the data port. The first selection signal is generated by the controller based on at least one of the voltage signal and the data output to the controller via the data port.

Abstract: An apparatus for correcting a duty cycle of an input clock signal to generate a digitally corrected clock signal includes a duty cycle detector, an analog duty cycle correcting unit, and a digital duty cycle correcting unit. The duty cycle detector generates a duty cycle signal indicating a respective duty cycle of the digitally corrected clock signal. The analog duty cycle correcting unit adjusts a current flowing through a node to adjust the respective duty cycle of the input clock signal for generating an analog corrected clock signal at the node. The digital duty cycle correcting unit adjusts the respective duty cycle of the analog corrected clock signal according to the duty cycle signal for generating the digitally corrected clock signal.

Abstract: A synchronous semiconductor memory device includes a data input buffer and a data strobe input buffer. The data strobe input buffer includes an input buffer circuit and a detection circuit. The input buffer circuit is configured to be enabled based on an active signal, and to compare a data strobe signal with a first reference voltage to generate an internal data strobe signal. The detection circuit is configured to be enabled based on the active signal, and to compare the data strobe signal with a second reference voltage to generate a detection signal for enabling the data input buffer.

Abstract: A synchronous semiconductor memory device includes a data input buffer and a data strobe input buffer. The data strobe input buffer includes an input buffer circuit and a detection circuit. The input buffer circuit is configured to be enabled based on an active signal, and to compare a data strobe signal with a first reference voltage to generate an internal data strobe signal. The detection circuit is configured to be enabled based on the active signal, and to compare the data strobe signal with a second reference voltage to generate a detection signal for enabling the data input buffer.