Abstract: A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two electrode layers and then reducing the ions of conductive nanoparticles into conductive nanoparticles in the organic material to form a desired memory layer. In addition, a nonvolatile organic memory device manufactured by the method of the current invention is also provided. The method allows the memory device to be manufactured using a rapid, simple, and environmentally friendly process, without the need for an encapsulation process. As well, the memory device has a low operating voltage, and hence, is suitable for application to various portable electronic devices that must have low power consumption.

Abstract: The present disclosure relates to an organic memory device and a fabrication method thereof. The organic memory device comprises a first electrode, a second electrode, and an organic memory layer situated between the electrodes, wherein a metallic nanoparticle layer is further situated between the first electrode and the organic memory layer. Since the organic memory device may be operated using only positive voltages, a 1D1R device composed of one diode and one resistor can be realized and a passive matrix can be realized due to the 1D1R structure. Accordingly, the organic memory device enables higher integration, ultrahigh speeds, larger capacities, lower power consumption, and/or lower prices.

Abstract: Disclosed are a method for forming an organic layer pattern which is characterized by forming a thin layer by coating a coating solution including a polyimide-based polymer having a heteroaromatic pendant group including a heteroatom in its polyimide major chain, a photoinitiator and a crosslinking agent on a substrate and drying the substrate, and exposing and developing the thin layer, an organic layer pattern prepared by the method, and an organic memory device comprising the pattern. According to example embodiments, a high-resolution micropattern may be formed without undergoing any expensive process, e.g., photoresist, leading to simplification of the preparation process and cost reduction.

Abstract: A method of driving a multi-state organic memory device which includes an organic memory layer between upper and lower electrodes. The method comprises continuously applying voltages having different polarities to conduct switching into a low resistance state, and applying a single pulse to conduct switching into a high resistance state. A multi-state memory is realized using one memory device, since it is possible to gain three or more resistance states, thus significantly improving integration. The method has excellent reproducibility, and the resistance state induced by multiple pulses has an excellent nonvolatile characteristic.

Abstract: An organic memory device and a method for fabricating the memory device are provided. The organic memory device may include a first electrode, a second electrode, and an ion transfer layer between the first electrode and the second electrode. The organic memory device may have lower operating voltage and current, and may be fabricated at lower costs.

Abstract: A memory device driving circuit is disclosed which drives a memory device including a first electrode, a second electrode, and a memory layer interposed between the first electrode and the second electrode. The memory device driving circuit may include a main driver connected to the memory device, to drive the memory device, and a secondary driver connected between the memory device and the main driver, to control a set resistance of the memory device. The memory device driving circuit may freely adjust the set resistance of the memory device, to maintain the resistance of the memory device at a desired value. Accordingly, an improvement in the operation reliability of the memory device may be achieved.

Abstract: Disclosed herein are ferrocene-containing polymers in which ferrocene is conjugated to the backbone of conductive conjugated polymers. Further disclosed are organic memory devices comprising the ferrocene-containing polymers. Because the organic memory devices possess the advantages of decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, they may be used as highly integrated large-capacity memory devices.

Abstract: Disclosed herein are an organic memory device and a method for fabricating the memory device. The organic memory device may include a first electrode, a second electrode and an organic active layer between first and second electrodes, wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound. Because the organic memory device possesses decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, the organic memory device may be used as a highly integrated large-capacity memory device.

Abstract: Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices.

Abstract: Disclosed herein are an organic memory device and a method for fabricating the device. The organic memory device may include a first electrode, a second electrode and an organic active layer wherein the organic active layer includes an upper organic material layer formed of an electrically conductive organic material containing heteroatoms and a lower organic material layer formed of an electrically non-conductive organic material containing heteroatoms. Because the organic memory device exhibits improved thermal stability and non-volatility, it may be well suited for use in nonvolatile large-capacity storage units. Flexible electrodes may be used in the organic memory device to fabricate flexible memory devices.

Abstract: The present invention relates to a dynamically controllable light modulator, which is capable of controlling light intensity by controlling electric fields applied to the light modulator, and a display using the same. It is an object of the present invention to solve the problems of the conventional light modulator by providing a dynamically controllable light modulator controlled by a uniform electric field and a display using the same. The dynamically controllable light modulator for achieving the object of the present invention comprises a phase diffraction grating member wherein a diffraction grating portion of which the thickness changes periodically is formed on one surface of the phase diffraction grating member; a phase modulation member whose one surface is attached to the diffraction grating portion of the phase diffraction grating member; and electrodes provided on the other surfaces of the phase diffraction grating member and the phase modulation member.