Abstract: A semiconductor apparatus has one or more semiconductor chips. The semiconductor apparatus may include a power supply pad; power lines disposed on one side of the power supply pad, and including a first power line and a second power line; and connection lines connecting the power supply pad and the power lines. The connection lines may include a plurality of first connection lines connecting the power supply pad and the first power line, and a plurality of second connection lines connecting the power supply pad and the second power line, and disposed between the first connection lines. One or more pair of adjacent first connection lines may have a connection part by which the pair of adjacent first connection lines are connected with each other.

Abstract: A semiconductor apparatus has one or more semiconductor chips. The semiconductor apparatus may include a power supply pad; power lines disposed on one side of the power supply pad, and including a first power line and a second power line; and connection lines connecting the power supply pad and the power lines. The connection lines may include a plurality of first connection lines connecting the power supply pad and the first power line, and a plurality of second connection lines connecting the power supply pad and the second power line, and disposed between the first connection lines. One or more pair of adjacent first connection lines may have a connection part by which the pair of adjacent first connection lines are connected with each other.

Abstract: A semiconductor apparatus has one or more semiconductor chips. The semiconductor apparatus may include a power supply pad; power lines disposed on one side of the power supply pad, and including a first power line and a second power line; and connection lines connecting the power supply pad and the power lines. The connection lines may include a plurality of first connection lines connecting the power supply pad and the first power line, and a plurality of second connection lines connecting the power supply pad and the second power line, and disposed between the first connection lines. One or more pair of adjacent first connection lines may have a connection part by which the pair of adjacent first connection lines are connected with each other.

Abstract: A semiconductor device may include a global line coupled to a source, and a plurality of local lines coupled to a plurality of targets, respectively, and coupled to the global line. The local lines may be configured to have cross-sectional areas. The cross-sectional areas may increase in proportion to distances from the source to the respective targets.

Abstract: A semiconductor apparatus has one or more semiconductor chips. The semiconductor apparatus may include a power supply pad; power lines disposed on one side of the power supply pad, and including a first power line and a second power line; and connection lines connecting the power supply pad and the power lines. The connection lines may include a plurality of first connection lines connecting the power supply pad and the first power line, and a plurality of second connection lines connecting the power supply pad and the second power line, and disposed between the first connection lines. One or more pair of adjacent first connection lines may have a connection part by which the pair of adjacent first connection lines are connected with each other.

Abstract: A semiconductor device includes a through-silicon-via arranged to couple a plurality of stacked semiconductor chips, an interconnection line coupled to the through-silicon-via at one side and arranged to couple the through-silicon-via to the semiconductor chip, an internal interconnection line disposed at the other side of the interconnection line and intersected with the interconnection line, and at least one first contact disposed to couple the internal interconnection line to the interconnection line. A region of the interconnection line in which the internal interconnection line is disposed is equally divided, and an area between the divided regions is removed.

Abstract: A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. The semiconductor device is formed with a gate line that extends over an active region, and a gate pad located outside of the active region. The gate line and the gate pad are adjoined such that the gate line and a side of the gate pad form a line. Dummy gates may also be applied. The semiconductor device includes a first metal line patterns supplying power to a block having a plurality of cells, a second metal line pattern transferring a signal to the cells, and dummy metal line patterns divided into in a longitudinal direction.

Abstract: A semiconductor device includes a through-silicon-via arranged to couple a plurality of stacked semiconductor chips, an interconnection line coupled to the through-silicon-via at one side and arranged to couple the through-silicon-via to the semiconductor chip, an internal interconnection line disposed at the other side of the interconnection line and intersected with the interconnection line, and at least one first contact disposed to couple the internal interconnection line to the interconnection line. A region of the interconnection line in which the internal interconnection line is disposed is equally divided, and an area between the divided regions is removed.

Abstract: A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. The semiconductor device is formed with a gate line that extends over an active region, and a gate pad located outside of the active region. The gate line and the gate pad are adjoined such that the gate line and a side of the gate pad form a line. Dummy gates may also be applied. The semiconductor device includes a first metal line patterns supplying power to a block having a plurality of cells, a second metal line pattern transferring a signal to the cells, and dummy metal line patterns divided into in a longitudinal direction.

Abstract: A semiconductor apparatus comprises a semiconductor substrate; a group of PMOS transistors formed on a predetermined portion of the semiconductor substrate; a group of NMOS transistors disposed adjacent to the group of PMOS transistors on the semiconductor substrate; a guard ring region formed between the group of PMOS transistors and the group of NMOS transistors; and a current detouring unit formed in the guard ring region and configured to discharge current produced by plasma ions towards the semiconductor substrate.

Abstract: A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. The semiconductor device is formed with a gate line that extends over an active region, and a gate pad located outside of the active region. The gate line and the gate pad are adjoined such that the gate line and a side of the gate pad form a line. Dummy gates may also be applied. The semiconductor device includes a first metal line patterns supplying power to a block having a plurality of cells, a second metal line pattern transferring a signal to the cells, and dummy metal line patterns divided into in a longitudinal direction.