Abstract: A non-volatile memory device and a method of fabricating the same are provided. In the non-volatile memory device, at least one first semiconductor layer of a first conductivity type may be formed spaced apart from each other on a portion of a substrate. A plurality of first resistance variation storage layers may contact first sidewalls of each of the at least one first semiconductor layer. A plurality of second semiconductor layers of a second conductivity type, opposite to the first conductivity type, may be interposed between the first sidewalls of each of the at least one first semiconductor layer and the plurality of first resistance variation storage layers. A plurality of bit line electrodes may be connected to each of the plurality of first resistance variation storage layers.

Abstract: A highly integrated non-volatile memory device and a method of operating the non-volatile memory device are provided. The non-volatile memory device includes a semiconductor layer. A plurality of upper control gate electrodes are arranged above the semiconductor layer. A plurality of lower control gate electrodes are arranged below the semiconductor layer, and the plurality of upper control gate electrodes and the plurality of lower control gate electrodes are disposed alternately. A plurality of upper charge storage layers are interposed between the semiconductor layer and the upper control gate electrodes. A plurality of lower charge storage layers are interposed between the semiconductor layer and the lower control gate electrodes.

Abstract: A non-volatile memory device includes memory transistors disposed on a semiconductor substrate in a NAND string. A string select transistor is disposed at a first end of the NAND string, and a ground select transistor is disposed at a second end of the NAN string. Bit lines are electrically connected to the semiconductor substrate outside of the string select transistor and a gate electrode of the ground select transistor.

Abstract: Disclosed are semiconductor apparatuses and methods of fabricating the same. According to the methods, the number of operations for fabricating the semiconductor apparatuses having a plurality of layers may be the same as the number of operations for fabricating a semiconductor apparatus having one layer. The semiconductor apparatuses may include first active regions extending in the same direction, in parallel, separated from each other and including first and second impurity doped regions on opposite ends of the first active regions from each other. The semiconductor apparatuses may further include second active regions on a layer above the first active regions, extending in the same direction as the first active regions, separated from each other, in parallel, and including first and second impurity doped regions on opposite ends of the second active regions from each other.

Abstract: The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to define a void between the pair of fins. Outer surfaces of the pair of fins are the surfaces of the pair of fins that do not face the void and inner surfaces of the pair of fins are the surfaces of the pair of fins that do face the void. The non-volatile memory device may further include at least one control gate electrode that may cover at least a portion of outer surfaces of the pair of fins, may extend over the bridge insulating layer, and may be isolated from the semiconductor substrate. At least one pair of gate insulating layers may be between the at least one control gate electrode and the pair of fins, and at least one pair of storage nodes may be between the at least one pair of gate insulating layers and the at least one control gate electrode.

Abstract: Provided are relatively higher-performance wire-type semiconductor devices and relatively economical methods of fabricating the same. A wire-type semiconductor device may include at least one pair of support pillars protruding above a semiconductor substrate, at least one fin protruding above the semiconductor substrate and having ends connected to the at least one pair of support pillars, at least one semiconductor wire having ends connected to the at least one pair of support pillars and being separated from the at least one fin, a common gate electrode surrounding the surface of the at least one semiconductor wire, and a gate insulating layer between the at least one semiconductor wire and the common gate electrode.

Abstract: A non-volatile memory device having a stack structure, and a method of operating the non-volatile memory device In which the non-volatile memory device includes a plurality of variable resistors arranged in at least one layer. At least one layer selection bit line and a plurality of bit lines coupled to the plurality of the variable resistors are provided. A plurality of selection transistors coupled between the plurality of the bit lines and the plurality of the variable resistors are provided.

Abstract: A resistive memory device having a resistor part for controlling a switching window. The resistive memory device of this disclosure can control a switching window to assure operational reliability thereof. In addition, since the memory device is realized by additionally providing only the resistor part for controlling a switching window to various resistive memory devices, it can be easily fabricated and applied to all current and voltage driving type resistive devices.

Abstract: Provided is a bulb-type light concentrated solar cell module that includes a reflective mirror unit that is concavely formed to convergingly reflect sunlight and has a first hole on a bottom thereof; a solar cell that generates electrical energy in response to light received from the reflective mirror unit; a socket that blocks the first hole at a lower part of the reflective mirror unit and is fixed on the reflective mirror unit; and a power control unit that is electrically connected to the solar cell to generate electricity in the socket.

Abstract: A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node.

Abstract: A semiconductor device includes a semiconductor substrate, a gate pattern disposed on the semiconductor substrate, a body region disposed on the gate pattern and a first impurity doping region and a second impurity doping region. The gate pattern is disposed below the body region and the first impurity doping region and the second impurity doping region.

Abstract: A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

Abstract: The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to define a void between the pair of fins. Outer surfaces of the pair of fins are the surfaces of the pair of fins that do not face the void and inner surfaces of the pair of fins are the surfaces of the pair of fins that do face the void. The non-volatile memory device may further include at least one control gate electrode that may cover at least a portion of outer surfaces of the pair of fins, may extend over the bridge insulating layer, and may be isolated from the semiconductor substrate. At least one pair of gate insulating layers may be between the at least one control gate electrode and the pair of fins, and at least one pair of storage nodes may be between the at least one pair of gate insulating layers and the at least one control gate electrode.

Abstract: A non-volatile memory device and a method of fabricating the same are provided. A non-volatile memory device may include a semiconductor substrate including a body and at least one pair of fins vertically protruding from the body and spaced apart from each other, and at least one control gate electrode on at least portions of outer side surfaces of the at least one pair of fins and extending onto top portions of the at least one pair of fins on an angle with the at least one pair of fins. The non-volatile memory device may further include at least one pair of gate insulating layers between the at least one control gate electrode and the at least one pair of fins, and at least one pair of storage node layers between the at least one pair of gate insulating layers and at least a portion of the at least one control gate electrode. The at least one control gate electrode may extend onto top portions of the at least one pair of fins in a zigzag fashion.

Abstract: A non-volatile memory device, which includes a plurality of memory transistors that are coupled with a plurality of bit lines and a plurality of word lines, and methods of operating a non-volatile memory device are provided. A selected bit line for programming and unselected bit lines for preventing programming are determined from the plurality of bit lines. An inhibiting voltage is applied to at least one inhibiting word line chosen from the plurality of word lines. The at least one inhibiting word line includes a word line positioned closest to a string selection line. A programming voltage is applied to a selected word line chosen from the plurality of word lines. Data is programmed into a memory transistor coupled with the selected word line and the selected bit line while preventing data from being programming into memory transistors coupled with the unselected bit line.

Abstract: A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node.

Abstract: A non-volatile memory device and methods of fabricating the device according to example embodiments involve a stacked layer structure. The non-volatile memory device may include at least one first horizontal electrode including a first sidewall and a second sidewall; at least one second horizontal electrode including a third sidewall and a fourth sidewall; wherein the third sidewall may be disposed to face the first sidewall; at least one vertical electrode may be interposed between the first sidewall and the third sidewall, in such a way as to cross or intersect each of the at least one first and second horizontal electrodes, and; at least one data storage layer that may be capable of locally storing a change of electrical resistance may be interposed where the at least one first horizontal electrode and the at least one vertical electrode cross or intersect and where the at least one horizontal electrode and the at least one vertical electrodes cross or intersect.

Abstract: An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.

Abstract: Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.

Abstract: Provided is a semiconductor apparatus including a substrate region, an active region on the substrate region, a gate pattern on the active region, and first and second impurities-doped regions along both edges of the active region that do not overlap the gate pattern. The length of the first and second impurities-doped regions in the horizontal direction may be shorter than in the vertical direction. The first and second impurities-doped regions may be formed to be narrow along both edges of the active region so as not to overlap the gate pattern.