Abstract: Disclosed is an integrated thermal management system for a vehicle including a refrigerant flow line extending to allow a refrigerant discharged from a compressor to flow in the order of an indoor condenser, an external condenser, and an evaporator and to flow back to the compressor, a refrigerant chiller line branching from the refrigerant flow line at each of the points downstream of the compressor, the indoor condenser, or the external condenser, the refrigerant chiller line joining the refrigerant flow line at a point upstream of the compressor after the refrigerant passes through a battery chiller and an electric chiller or bypasses the same, a battery cooling line extending to allow a coolant to circulate while passing through a battery radiator or the battery chiller, and an electric cooling line extending to allow a coolant to circulate while passing through an electric radiator or the electric chiller.

Abstract: There are provided a system and a method for setting a synchronization agent. A system for setting an optimal synchronization agent according to a workload according to an embodiment includes: a data integration device configured to integrate and store data which is collected through a collection agent; an agent management server configured to manage the collection agent that periodically polls data from a data source and transmits the data to the data integration device; and an agent setting automation device configured to set an optimal agent set value related to collection and transmission of data of the collection agent.

Abstract: There are provided a method and a system for selecting an optimal synchronization broker for each workload. A system for selecting an optimal synchronization broker for each workload according to an embodiment includes: a storage unit including a database that contains specialist recommendation information including information on a correct protocol that is recommended by a specialist with respect to a service specification and data transmission requirements; and a processor configured to determine an optimal in-bound protocol and an optimal out-bound protocol according to the data transmission requirements through a decision tree model that is trained by using the specialist recommendation information as training data.

Abstract: Disclosed is a semiconductor package comprising lower and upper structure. The lower structure includes a first semiconductor substrate, first through vias vertically penetrating the first semiconductor substrate, first signal pads connected to the first through vias, first dummy pads between the first signal pads and electrically separated from the first through vias, and a first dielectric layer surrounding the first signal pads and the first dummy pads. The upper structure includes a second semiconductor substrate, second signal pads and second dummy pads, and a second dielectric layer surrounding the second signal pads and the second dummy pads. The first signal pad is in contact with one of the second signal pads. The first dummy pad is in contact with one of the second dummy pads. A first interval between the first dummy pads is 0.5 to 1.5 times a second interval between the first signal pads.

Abstract: The present invention provides a battery safety test device includes: a mechanical switch element having one end connected to either a battery positive or negative electrode and the other end connected to an electronic switching element; the electronic switching element having one end connected to the mechanical switch element and the other end connected to the other of the battery positive or negative electrode; a voltage sensor for measuring a voltage of the battery after the mechanical switch element and the electronic switching element are turned on; and a current sensor for measuring a current of the battery after the mechanical switch element and the electronic switching element are turned on.

Abstract: Provided are a separator coating composition for a secondary battery including inorganic particles and a silane salt compound having a specific structure, a separator using the same, and an electrochemical device including the same. Specifically, a separator coating composition for a secondary battery which implements adhesion between an inorganic material layer and a porous substrate without including an acid/polymer-based organic binder in a coating composition for forming the inorganic material layer on one or both surfaces of the porous substrate and does not need a separate dispersing agent for dispersing the inorganic particles, a separator manufactured using the same, and an electrochemical device including the separator are provided.

Abstract: Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

Abstract: A semiconductor package includes a first semiconductor chip including a first main region and a first edge region, and a second semiconductor chip on the first semiconductor chip and including a second main region and a second edge region. The first semiconductor chip includes a first main pad and a first dummy pad respectively on the first main region and the first edge region on a top surface of the first semiconductor chip. The second semiconductor chip includes a first semiconductor substrate, a wiring layer below the first semiconductor substrate and including a wiring dielectric layer and wiring patterns, a second main pad and a second dummy pad respectively on the second main region and the second edge region below the wiring layer. A thickness of the wiring layer is greater on the second main region than on the second edge region.

Abstract: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: A susceptor and an apparatus for chemical vapor deposition (CVD) are provided. The susceptor includes a main body configured to include a mounting unit having an uneven plane, and a substrate supporting unit configured to be seated on the mounting unit. A bottom surface of the substrate supporting unit has a shape corresponding to a shape of the mounting unit, and the mounting unit includes a gas discharge hole to discharge gas to the substrate supporting unit. Accordingly, accurate positioning of the substrate supporting unit may not be required when the substrate supporting unit is being returned. Also, the vapor deposition may be stably performed.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: There are provided a susceptor and a chemical vapor deposition apparatus including the same. The susceptor includes: at least one pocket accommodating a deposition object therein; a seating part stepped downward from a top end of the pocket, the seating part having the deposition object placed thereon; and a recess recessed from the seating part to a predetermined depth, wherein the recess has a radius of curvature ranging from substantially 8000 mm to 25000 mm.

Abstract: There is provided a chemical vapor deposition apparatus including: a chamber including a reactor where a deposition object is deposited; a first supplier including a plurality of gas pipes allowing a first gas to be jetted into the reactor in a substantially horizontal direction; a second supplier including a plurality of holes of a predetermined size having the gas pipes inserted therein, respectively; a supply flow path formed between each of the gas pipes and each of the holes, the supply flow path allowing a second gas to be supplied into the reactor in a substantially horizontal direction.

Abstract: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.