Abstract: One or more embodiments of the present disclosure are directed toward improved methods of fabricating a semiconductor device utilizing multi-level electron beam lithography (e-beam lithography), an alignment marker for multi-level e-beam lithography, and a semiconductor device including the alignment marker. A method of fabricating a semiconductor device may include: forming an alignment marker in a substrate, the alignment marker including tantalum; determining, utilizing a backscatter electron detector of an electron beam lithography tool, a location of an edge of the alignment marker based on an atomic number contrast between the alignment marker and the substrate; and forming, utilizing the electron beam lithography tool, at least one transistor in the substrate based on the location of the edge of the alignment marker.

Abstract: A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.

Abstract: An electronic circuit comprising: an integrated circuit chip, the integrated circuit chip having a top face; portions of the top face of the chip being covered by a first metal layer electrically connected to the integrated circuit; and a dialectic layer formed on the top face of the chip beside and on top of said first metal layer; wherein the dielectric layer extends parallel to the top face of the chip beyond the edges of the chip, the first metal layer extending in the dielectric layer beyond the edges of the chip; and wherein portions of a top surface of the dielectric layer are covered by a second metal layer, portions of the first and second metal layers being electrically connected through the dielectric layer.

Abstract: A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

Abstract: An electronic circuit comprising: an integrated circuit chip, the integrated circuit chip having a top face; portions of the top face of the chip being covered by a first metal layer electrically connected to the integrated circuit; and a dielectic layer formed on the top face of the chip beside and on top of said first metal layer; wherein the dielectric layer extends parallel to the top face of the chip beyond the edges of the chip, the first metal layer extending in the dielectric layer beyond the edges of the chip; and wherein portions of a top surface of the dielectric layer are covered by a second metal layer, portions of the first and second metal layers being electrically connected through the dielectric layer.

Abstract: A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

Abstract: A method of three dimensional heterogeneous integration including forming HBT devices on a first substrate, each HBT device having a collector, removing the first substrate, forming first bonding pads on each collector of the heterojunction bipolar transistor devices, forming high electron mobility transistor (HEMT) devices on a first side of a growth substrate, wherein the growth substrate comprises a thermally conductive substrate, such as SiC or diamond, forming second bonding pads on the first side of the growth substrate, aligning and bonding the first bonding pads to the second bonding pads, forming CMOS devices on a Si substrate, bonding the CMOS devices on the Si substrate to a second side of the growth substrate, and forming selectively interconnects between the HBT devices, the HEMT devices, and the CMOS devices by forming vias and first and second level metal interconnects.

Abstract: A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.

Abstract: A system is disclosed for IC fabrication, including seating an integrated circuit (“IC”) having at least one contact into a recess of a silicon interposer substrate, applying an insulator in liquid form to fill portions of the recess not otherwise occupied by the IC and to cover a top surface of the IC and the silicon interposer substrate, introducing the insulator to a ramped environmental temperature, holding the environmental temperature at a reflow temperature to reflow the insulator and ramping down the environmental temperature to cure the insulator.

Abstract: A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a first lateral channel above the conductive substrate and a second lateral channel above the first lateral channel. The semiconductor device further includes a second contact above the second lateral channel. The semiconductor device still further includes an interconnect that connects the first and second lateral channels to the conductive substrate operable to provide a low resistance coupling between the first contact and the first and second lateral channels.

Abstract: A semiconductor device and method of forming the same. The semiconductor device includes an epitaxially grown and conductive buffer layer having a contact covering a substantial portion of a bottom surface thereof and a lateral channel above the buffer layer. The semiconductor device also includes another contact above the lateral channel and an interconnect that connects the lateral channel to the buffer layer, operable to provide a low resistance coupling between the contact and the lateral channel.

Abstract: A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions.

Abstract: A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

Abstract: In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths approaching and beyond 1.3 ?m. According to one aspect, a multiple quantum well strain compensated structure is formed using a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. By growing tensile-strained GaNAs barrier layers, a larger active region with multiple quantum wells can be formed increasing the optical gain of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with at least several quantum wells, for example, nine quantum wells, and with room temperature emission approaching and beyond 1.3 ?m.

Abstract: A semiconductor device including a substrate-driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate-driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate-driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate-driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.

Abstract: A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

Abstract: A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions.

Abstract: A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

Abstract: A semiconductor device having at least one lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect having a sloped wall that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel. In a related but alternative embodiment, the first contact is a source contact and the second contact is a drain contact for the semiconductor device.

Abstract: A semiconductor device having a lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel.