Abstract: Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract: A magnetic memory device and method of manufacturing the same are provided. The magnetic memory device can include a first vertical magnetic pattern on a substrate, a second vertical magnetic pattern on the first vertical magnetic pattern, and a tunnel barrier pattern disposed between the first vertical magnetic pattern and the second vertical magnetic pattern. The first vertical magnetic pattern can include a first pattern on the substrate, a second pattern on the first pattern, and an exchange coupling pattern between the first pattern and the second pattern. The first pattern can comprise an amorphous magnetic substance and a component comprising at least one of platinum, palladium, and nickel.

Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract: A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer.

Abstract: A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

Abstract: A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.

Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

Abstract: Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method.

Abstract: A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.

Abstract: A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract: A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract: A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.

Abstract: A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

Abstract: Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.

Abstract: A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.

Abstract: Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.