Abstract: Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as t

Abstract: A plasma monitoring device includes a plasma supplier including a power supply, a reaction gas supply line, and an emission nozzle for emitting plasma, which is generated therein, toward an object; a camera unit for obtaining an image of the plasma emission state; and a controller for obtaining a measurement value by converting pixel information of the image into a numerical value and comparing it with a reference value, which is a measurement value in a normal emission state, to check the plasma emission state. The camera unit obtains an image of the plasma emission state, and the controller analyzes the image to obtain a measurement value, which is used to monitor the state of plasma in real time and control the amount of reaction gas supplied to the plasma supplier and the plasma discharge condition, so that plasma is evenly emitted from the plasma supplier.

Abstract: A depositing apparatus for forming a thin film includes a source container in which a source material to be deposited on a substrate is accommodated in a solid or liquid state; an evaporation chamber which couples and communicates with the source container above the source container, and through which an evaporated source material from the source container passes; a spraying hole which is formed on a top of the evaporation chamber, and sprays upward the evaporated source material passed through the evaporation chamber; a first heater which is provided above the source material inside the evaporation chamber or the source container, and supplies heat to the source material to evaporate the source material accommodated in the source container; and a block plate is provided above the first heater inside the evaporation chamber.

Abstract: Disclosed is a method for measuring a thickness of a subjecting layer attached on a base layer by means of an interferometer, which includes the steps of: obtaining a correlation equation of a phase difference with respect to thicknesses of sample layers, the thicknesses being different from each other, the sample layers being made from a material substantially equal to a material of the subjecting layer; obtaining a first interference signal with respect to an optical axial direction incident to the base layer at a boundary surface between an air layer and the base layer; obtaining a second interference signal with respect to the optical axial direction at a boundary surface between the subjecting layer and the base layer; obtaining a phase difference between a phase of the first interference signal and a phase of the second interference signal at respective heights substantially equal to each other with respect to the optical axial direction; and determining a thickness of the subjecting layer by inserting

Abstract: A thickness measurement apparatus includes a beam splitter for reflecting or transmitting a ray irradiated from an optical source or a ray reflected by a measurement object; a first lens part which condenses a ray to the measurement object and generates a reference ray; a second lens part for condensing a ray to the object to be measured; an interference light detector for detecting an interference signal generated by the reflected ray and reference ray; a spectroscopic detector corresponding to the second lens part to form a light path different from the path formed by the interference light detector and splits the ray reflected by the measurement object to detect an intensity and wavelength of each split ray; and a light path converter for selectively transmitting a ray to the interference light detector or spectroscopic detector, wherein position exchanging is performed between the first second lens parts.

Abstract: A vision inspection system and a workpiece inspection method are used in inspecting a workpiece. The vision inspection system includes a level block having an upper surface whose opposite end regions are defined as a first position and a second position. A first transfer device has a table for supporting the workpiece. The first transfer device is installed on the upper surface of the level block for rectilinearly moving the table between the first position and the second position. A camera is arranged above the level block for taking an image of the workpiece to output image data. A second transfer device is installed on the upper surface of the level block for rectilinearly moving the camera between the first position and the second position. A computer is connected to the first transfer means, the camera and the second transfer means to control them in a specified manner.

Abstract: Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as t

Abstract: An apparatus for measuring a thickness, which includes: a first beam splitter for reflecting or transmitting a ray irradiated from an optical source or a ray reflected by a measurement object; a first lens part which condenses a ray to the measurement object and generates a reference ray having a difference of a light path in comparison with a ray reflected by the measurement object; a second lens part for condensing a ray to the object to be measured; an interference light detector which corresponds to at the first lens part so as to form a light path and detects an interference signal generated by the ray reflected by the measurement object and the reference ray; a spectroscopic detector which corresponds to the second lens part so as to form a light path different from the light path formed by the interference light detector and splits the ray reflected by the measurement object so as to detect an intensity and a wavelength of each split ray; and a light path converter for selectively transmitting a ray to

Abstract: Disclosed is a method for measuring a thickness of a subjecting layer attacked on a base layer by means of an interferometer, which includes the steps of: obtaining a correlation equation of a phase difference with respect to thicknesses of sample layers, the thicknesses being different from each other, the sample layers being made from a material substantially equal to a material of the subjecting layer; obtaining a first interference signal with respect to an optical axial direction incident to the base layer at a boundary surface between an air layer and the base layer; obtaining a second interference signal with respect to the optical axial direction at a boundary surface between the subjecting layer and the base layer; obtaining a phase difference between a phase of the first interference signal and a phase of the second interference signal at respective heights substantially equal to each other with respect to the optical axial direction; and determining a thickness of the subjecting layer by inserting

Abstract: A plasma monitoring device includes a plasma supplier including a power supply, a reaction gas supply line, and an emission nozzle for emitting plasma, which is generated therein, toward an object; a camera unit for obtaining an image of the plasma emission state; and a controller for obtaining a measurement value by converting pixel information of the image into a numerical value and comparing it with a reference value, which is a measurement value in a normal emission state, to check the plasma emission state. The camera unit obtains an image of the plasma emission state, and the controller analyzes the image to obtain a measurement value, which is used to monitor the state of plasma in real time and control the amount of reaction gas supplied to the plasma supplier and the plasma discharge condition, so that plasma is evenly emitted from the plasma supplier.

Abstract: A vision inspection system and a workpiece inspection method are used in inspecting a workpiece. The vision inspection system includes a level block having an upper surface whose opposite end regions are defined as a first position and a second position. A first transfer device has a table for supporting the workpiece. The first transfer device is installed on the upper surface of the level block for rectilinearly moving the table between the first position and the second position. A camera is arranged above the level block for taking an image of the workpiece to output image data. A second transfer device is installed on the upper surface of the level block for rectilinearly moving the camera between the first position and the second position. A computer is connected to the first transfer means, the camera and the second transfer means to control them in a specified manner.

Abstract: A non-contacting measuring method for three dimensional micro pattern in a measuring object is disclosed. Three dimensional micro pattern of the surface of the measuring object is measured using blur of light. For measurement, a mechanism of an optical window with a slit is inserted between light source and the measuring object. The blurred image is captured by charge coupled device sensor based image frame grabber, and is analyzed in personal computers. All the values of the relative height differences are obtained in overall scanning measurement area of the measuring object. The relative height differences are the distances from the reference position to the other positions. The reference position is selected when its image is sharp in focus on the screen. At this time, images of the other positions except the reference position are blurred out of focus on the screen.