Abstract: A method of fabricating a semiconductor device includes forming a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer interposed between the first and second magnetic layers, patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern, forming an insulating layer to cover the magnetic tunnel junction pattern, and performing a thermal treatment process to crystallize at least a portion of the first and second magnetic layers. The thermal treatment process may include performing a first thermal treatment process at a first temperature, after the forming of the magnetic tunnel junction layer, and performing a second thermal treatment process at a second temperature, which is higher than or equal to the first temperature, after the forming of the insulating layer.

Abstract: Disclosed is an air conditioner including a tray and a capsule installed to the tray to discharge a functional material. The capsule includes a main body defining an inner space for accommodation of an electrode, a first cover configured to cover the top of the inner space, the first cover having a first hole for discharge of the atomized functional material, and a second cover having a protrusion for accommodation of at least a portion of the electrode. The capsule realizes uniform spraying of the functional material despite variation in temperature inside the air conditioner.

Abstract: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

Abstract: Provided is an air conditioner having an ion generation device, the ion generation device including a main body including an electrode structure that includes a discharge electrode and a ground electrode, a coupling part disposed on at least one surface of the main body, the coupling part being coupled to the case, and an ion discharge part disposed on the main body to discharge the ions generated when a high voltage is applied to the electrode structure.

Abstract: Disclosed is an air cleaning device for air conditioners. The air cleaning device includes a charging unit, and a dust collector including ground bodies and high voltage applied bodies forming a potential difference with the ground bodies, and disposed after the charging unit in an air flow direction, the charging unit includes a charging unit body and carbon fiber electrodes installed on the charging unit body, and a hydrophilic layer is formed on the outer surface of at least one of the ground bodies and the high voltage applied bodies. The air cleaning device may minimize an amount of generated ozone and an amount of generated ions, as compared to a case having a charging unit in which electrical discharge wires and opposite electrodes are alternately disposed, and increase dust collection efficiency with a simple structure and at low costs.

Abstract: The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a volatile switching layer interposed therebetween. The second electrode is deposited on top of the volatile switching layer during fabrication. The first electrode has a composition comprising a metal element and the second electrode has a composition comprising the metal element and aluminum element. The metal element may be silver, copper, or nickel. The volatile switching layer may have a composite structure comprising a plurality of conductive particles embedded in an insulating matrix. Alternatively, the volatile switching layer may have a multilayer structure comprising one or more conductive layers interleaved with two or more insulating layers. The memory element may include a magnetic tunnel junction.

Abstract: Provided herein are polypeptides containing stabilized therapeutic peptides related to enhancer of zeste homolog 2 (EZH2), histone lysine N-methyltransferase. Also provided are compositions containing these polypeptides and methods of using such peptides in the treatment of cancer that include administering to a subject one of the polypeptides.

Abstract: Provided are sputtering apparatuses and methods of manufacturing magnetic memory devices. The sputtering apparatus includes a process chamber, a stage in the process chamber and configured to load a substrate thereon, and a first sputter gun above the substrate in the process chamber. The first sputter gun is horizontally spaced apart from the substrate. The first sputter gun includes a first target including a first end and a second end, the first end being horizontally closer to the substrate than the second end. A first surface of the first target is inclined relative to a top surface of the substrate. A height of the second end of the first target relative to the top surface of the substrate is greater than that of the first end of the first target.