Abstract: A semiconductor device includes a substrate, a plurality of first conductive patterns disposed on the substrate and a plurality of second conductive patterns disposed on the first conductive patterns. Respective air gaps are disposed between adjacent ones of the first conductive patterns overlying a first region of the substrate, while adjacent ones of the first conductive patterns overlying a second region of the substrate do not have air gaps disposed therebetween. The air gaps may include first air gaps, and the device may further include second air gaps disposed between adjacent ones of the second conductive patterns in the second region. Adjacent ones of the second conductive patterns overlying a second region of the substrate may not have air gaps disposed therebetween.

Abstract: A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced apart from each other by a first distance, second conductive patterns disposed on the second region and spaced apart from each other by a second distance greater than the first distance, and an interlayer insulating layer disposed between the second conductive patterns and including at least one recess region having a width corresponding to the first distance.

Abstract: Semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns. Moreover, the semiconductor device includes a permeable layer on the conductive patterns. Methods of fabricating semiconductor devices are also provided.

Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.