Abstract: The ultraviolet light emitting device includes a substrate; a light emitting structure on the substrate, and including a plurality of compound semiconductors, each including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer on the first conductive semiconductor layer; and a second electrode layer on the second conductive semiconductor layer. The first electrode layer is spaced apart from a side surface of the active layer, and is provided along a peripheral portion of the active layer. At least one of the first and second electrode layers is a reflective layer.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode layer, a second electrode layer disposed between the light emitting structure and the first electrode layer, and an insulating layer surrounding the edge of the second electrode layer under the second conductive type semiconductor layer, the insulating layer being disposed between the second electrode layer and the first electrode layer, wherein the first electrode layer passes through the second electrode layer, the second conductive type semiconductor layer and the active layer, and contacts the first conductive type semiconductor layer, and the second electrode layer comprises a plurality of first reflective layers that contact the second conductive type semiconductor layer and are spaced from one another by a predetermined distance.

Abstract: A light emitting device package includes a sub mount; a light emitting device on the sub mount, and configured to generate light of a first wavelength; a dielectric layer disposed on the sub mount; and a fluorescent layer on the dielectric layer, and configured to convert the light of the first wavelength into light of a second wavelength, wherein the dielectric layer includes a plurality of layers having at least two different refractive indices, that transmits the light of the first wavelength and reflects the light of the second wavelength.

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a substrate over the light emitting structure; a first reflective layer having a plurality of dielectric layers including a first dielectric layer having a first refractive index over the substrate, and a second dielectric layer having a second refractive index different from the first refractive index over the first dielectric layer; and a second reflective layer over the first reflective layer, the second reflective layer having a refractive index lower than the refractive index of each dielectric layer of the first reflective layer.

Abstract: Provided are a light emitting device and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a first conductive layer having a first portion disposed under the second conductive type semiconductor layer and a second portion electrically connected to the first conductive type semiconductor layer; a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; an insulation layer between the first conductive layer and the second conductive layer; and a tunnel barrier between the first portion of the first conductive layer and the second conductive layer.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: Provided are a light emitting device and a light emitting device package. The light emitting device includes a transparent substrate, a light emitting structure, and a first reflection layer. The light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are disposed on a top surface of the substrate. The first reflection layer is disposed on a bottom surface of the substrate. The bottom surface of the substrate has a surface roughness of about 1 nm to about 15 nm in root mean square (RMS) value.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode layer, a second electrode layer disposed between the light emitting structure and the first electrode layer, and an insulating layer surrounding the edge of the second electrode layer under the second conductive type semiconductor layer, the insulating layer being disposed between the second electrode layer and the first electrode layer, wherein the first electrode layer passes through the second electrode layer, the second conductive type semiconductor layer and the active layer, and contacts the first conductive type semiconductor layer, and the second electrode layer comprises a plurality of first reflective layers that contact the second conductive type semiconductor layer and are spaced from one another by a predetermined distance.

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on, a light transmissive substrate having a refractive index lower than a refractive index of a compound semiconductor layer, and a mirror structure layer having a structure in which a first mirror layer having a first refractive index and a second mirror layer having a second refractive index different from the first refractive index are alternately stacked on each other. The first mirror layer has a thickness of W·?/(4·n1·m), and the second mirror layer has a thickness of W·?/(4·n2·m) in which the W represents a weight constant in a range of about 1.05 to about 1.25.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

Abstract: Provided are a light emitting device, a method of fabricating the light emitting device, and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a first conductive layer under the second conductive type semiconductor layer and electrically connected to the first conductive type semiconductor layer, a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer, an insulation layer between the first conductive layer and the second conductive layer, and a tunnel barrier under the second conductive type semiconductor layer and disposed between the first conductive layer and the second conductive layer.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

Abstract: Provided are a light emitting device, a method of fabricating the light emitting device, and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a first conductive layer under the second conductive type semiconductor layer and electrically connected to the first conductive type semiconductor layer, a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer, an insulation layer between the first conductive layer and the second conductive layer, and a tunnel barrier under the second conductive type semiconductor layer and disposed between the first conductive layer and the second conductive layer.

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on, a light transmissive substrate having a refractive index lower than a refractive index of a compound semiconductor layer, and a mirror structure layer having a structure in which a first mirror layer having a first refractive index and a second mirror layer having a second refractive index different from the first refractive index are alternately stacked on each other. The first mirror layer has a thickness of W·?/(4·n1·m), and the second mirror layer has a thickness of W·?(4·n2·m) in which the W represents a weight constant in a range of about 1.05 to about 1.25.