Patents by Inventor Woong Jin CHOI
Woong Jin CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240181100Abstract: A sterilization module including a main body, a circuit board disposed in the main body, a light source disposed on the circuit board to emit sterilizing light, and a transparent unit to protect the light source from an outside and including a material that transmits the sterilizing light, in which the light source includes a mesa including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer, in which the first electrode includes a first contact region disposed on the outer area of the first semiconductor layer and a second contact region at least partially surrounded by the mesa, and a distance between the transparent unit and the circuit board is greater than a height of the light source.Type: ApplicationFiled: February 14, 2024Publication date: June 6, 2024Inventors: Woong Ki JEONG, Jae Hak JEONG, Si Ho YU, Byung Chul JOO, Jae Young CHOI, Kyu Won HAN, Yeo Jin YOON
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Publication number: 20240169887Abstract: A source driver IC capable of cancelling an output offset is provided. The source driver IC comprises a reception circuit configured to receive an input data packet from a timing controller when operating in a normal mode and obtain an image data and a first clock signal from the input data packet, a control circuit configured to receive and output the image data and the first clock signal from the reception circuit when operating in the normal mode. The control circuit is configured to receive and output a second clock signal from the timing controller when operating in a low power mode. The source driver IC further comprises an output buffer circuit configured to output a data voltage related to the image data when operating in the normal mode and maintain an output of the data voltage when operating in the low power mode.Type: ApplicationFiled: November 22, 2023Publication date: May 23, 2024Applicant: LX SEMICON CO., LTD.Inventors: Hee Yoon JUNG, Woong Jin OH, Jung Min CHOI
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Patent number: 11939239Abstract: A sterilization module including a light source configured to irradiate ultraviolet light, a board on which the light source is mounted, a protective tube accommodating the board therein and configured to transmit ultraviolet light irradiated from the light source, a first base coupled to one side of the protective tube, and a second base coupled to the other side of the protective tube, in which at least one of the first base and the second base includes an insertion part to be inserted into the protective tube, the insertion part having a first diameter when viewed in a first cross-section perpendicular to a length direction of the protective tube, and a cover part integrally formed on the insertion part and having a second diameter greater than the first diameter in the first cross-section.Type: GrantFiled: April 13, 2018Date of Patent: March 26, 2024Assignee: Seoul Viosys Co., Ltd.Inventors: Jae Young Choi, Woong Ki Jeong, Kyu Won Han, Yeo Jin Yoon
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Publication number: 20240068091Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.Type: ApplicationFiled: January 5, 2022Publication date: February 29, 2024Applicant: EGTM Co., Ltd.Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Ji Yeon HAN, Ju Hwan JEONG, Hyeon Sik CHO
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Publication number: 20230366080Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.Type: ApplicationFiled: July 8, 2021Publication date: November 16, 2023Applicant: EGTM Co., Ltd.Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI
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Publication number: 20230339985Abstract: According to examples of the present disclosure, the organometallic compound is represented by Formula 1 below, which is used as a precursor when a Group 4 metal-containing thin film is deposited to provide a high-quality Group 4 metal-containing thin film. In Formula 1, M is Zr or Hf, R1 is selected from a linear alkyl group having 2 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, R2 is a linear alkyl group having 1 to 3 carbon atoms, and R1 and R2 are different from each other.Type: ApplicationFiled: April 17, 2023Publication date: October 26, 2023Inventors: Sung Jun JI, Kyuho CHO, Sun Young BAIK, Ju Hwan JEONG, Tae Young LEE, Shin Beom KIM, Woong Jin CHOI
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Patent number: 11591691Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.Type: GrantFiled: July 24, 2020Date of Patent: February 28, 2023Assignees: EGTM CO., LTD., SK HYNIX INC.Inventors: Geun Su Lee, Jae Min Kim, Ha Na Kim, Woong Jin Choi, Eun Ae Jung, Dong Hyun Lee, Myung Soo Lee, Ji Won Moon, Dong Hak Jang, Hyun Sik Noh
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Publication number: 20230057512Abstract: According to one embodiment of the present invention, a method of forming a thin film using a surface protection material, the method comprising: supplying a metal precursor to the inside of a chamber in which a substrate is placed so that the metal precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film, wherein before forming the thin film, the method further comprises: supplying the surface protection material to the inside of the chamber so that the surface protection material is adsorbed to the substrate; and purging the interior of the chamber.Type: ApplicationFiled: December 30, 2020Publication date: February 23, 2023Applicant: EGTM Co., Ltd.Inventors: Geun Su LEE, Jae Min KIM, Woong Jin CHOI
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Publication number: 20220403521Abstract: According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.Type: ApplicationFiled: November 16, 2020Publication date: December 22, 2022Applicant: EGTM CO., LTD.Inventors: Geun Su LEE, Jae Min KIM, Ha Na KIM, Woong Jin CHOI
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Publication number: 20220112600Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed; purging the interior of the chamber; supplying a doping precursor to the inside of the chamber; purging the interior of the chamber; supplying a first reactant to the inside of the chamber so that the first reactant reacts with the adsorbed doping precursor to form a doping thin film; supplying a dielectric film precursor to the inside of the chamber; purging the interior of the chamber; and supplying a second reactant to the inside of the chamber so that the second reactant reacts with the adsorbed dielectric film precursor to form a dielectric film.Type: ApplicationFiled: October 7, 2021Publication date: April 14, 2022Applicant: EGTM Co., Ltd.Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Ji Yeon HAN, Ha Joon KIM
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Publication number: 20210130954Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.Type: ApplicationFiled: July 24, 2020Publication date: May 6, 2021Applicant: EUGENETECH MATERIALS CO., LTD.Inventors: Geun Su LEE, Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Eun Ae JUNG, Dong Hyun LEE, Myung Soo LEE, Ji Won MOON, Dong Hak JANG, Hyun Sik NOH