Abstract: The present disclosure relates to a display device and a manufacturing method thereof, and a display device according to one or more embodiments includes a substrate, a transistor above the substrate, a first pixel electrode connected to the transistor, a scattering layer above the first pixel electrode, and defining repeating protrusions and depressions, a second pixel electrode above the scattering layer, and connected with the first pixel electrode, an emission layer above the second pixel electrode, and a common electrode above the emission layer.

Abstract: The present invention relates to a semiconductor memory device having a self-refresh control circuit. A conventional semiconductor memory device having a structure of a plurality of banks applies high-voltage word line driving signals individually to the banks in the self-refresh operation, which results in increased power consumption. According to the present invention, a semiconductor memory device having a self-refresh control circuit consists of a plurality of banks receiving word line driving signals and connected with a plurality of global word lines, a high voltage word line driving signal applied to the bank which is being refreshed being charge-shared with the bank to be succeedingly refreshed by a MOS transistor switched by a control signal. Accordingly, the high voltage word line driving signals individually applied to the plurality of banks are charge-shared by the bank to be succeedingly refreshed, and applied, thereby remarkably reducing the power consumption.

Abstract: A method for controlling a sense amplifier driver results in a fast speed memory device. Instead of using an overdrive structure, an efficient use of a block selection signal provide a driving voltage for access of a first data in a memory device at a fast speed and a low power consumption.