Abstract: The present invention provides a method for accessing a memory device and a memory accessing device. The method includes a) providing the memory device having a plurality of memory sub-spaces respectively having a plurality of address ranges; b) respectively assigning a plurality of base addresses to the plurality of memory sub-spaces; c) inputting an access address; d) respectively operating the base addresses with the access address to obtain a plurality of operated results; and e) accessing one of the memory sub-spaces if a specific one of the operated results falls within one of the address ranges corresponding to the one memory sub-space.

Abstract: The present invention is related to an interface circuit for transmitting data corresponding to a specific address from/to a decoding memory unit, includes a bit-selection circuit pre-set therein a transmission mode, and a processing circuit electrically connected to the bit-selection circuit for transmitting the data according to the transmission mode. The present invention also relates to methods for reading out and writing in data corresponding to a specific address from/to a decoding memory unit.

Abstract: The present invention is related to an enhanced high density Read-Only-Memory (ROM) device with select gate. A thin oxide layer is deposited on the ROM cell matrix and it is extended to the select lines which is on the top and bottom side of the ROM cell matrix to form the select gate. The ROM cell matrix can be organized more flexible by using the buried layers to pick out the unwanted gates. The metal contact can be directly made in this extended region too. Thereafter it reduces the manufacturing cost and achieves a high speed and density and simple process device.