Abstract: A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a gate structure. The gate structure includes a gate electrode over a gate dielectric, the gate dielectric having a bottom surface in a first plane. A second etch interacts with a first composition and an initial dopant to remove a bottom portion of a first sidewall spacer adjacent the gate structure, such that a bottom surface of the first sidewall spacer lies in a second plane different than the first plane. The removal of the bottom portion of the first sidewall spacer reduces a first distance between a source or drain and a bottom surface of the gate electrode, thus reducing proximity loading of the semiconductor device and improving functionality of the semiconductor device.

Abstract: A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a gate structure. The gate structure includes a gate electrode over a gate dielectric, the gate dielectric having a bottom surface in a first plane. A second etch interacts with a first composition and an initial dopant to remove a bottom portion of a first sidewall spacer adjacent the gate structure, such that a bottom surface of the first sidewall spacer lies in a second plane different than the first plane. The removal of the bottom portion of the first sidewall spacer reduces a first distance between a source or drain and a bottom surface of the gate electrode, thus reducing proximity loading of the semiconductor device and improving functionality of the semiconductor device.