Patents by Inventor Wu-Zang Yang
Wu-Zang Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11557625Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.Type: GrantFiled: April 20, 2020Date of Patent: January 17, 2023Assignee: OmniVision Technologies, Inc.Inventors: Chia-Ying Liu, Wu-Zang Yang, Chia-Jung Liu, Ming Zhang, Yin Qian, Alireza Bonakdar
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Patent number: 11201124Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.Type: GrantFiled: July 29, 2019Date of Patent: December 14, 2021Assignee: OMNIVISION TECHNOLOGIES, INC.Inventors: Chia-Ying Liu, Wu-Zang Yang, Chia-Jung Liu, Chi-Chih Huang
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Publication number: 20210327948Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.Type: ApplicationFiled: April 20, 2020Publication date: October 21, 2021Inventors: Chia-Ying LIU, Wu-Zang YANG, Chia-Jung LIU, Ming ZHANG, Yin QIAN, Alireza BONAKDAR
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Publication number: 20210035926Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.Type: ApplicationFiled: July 29, 2019Publication date: February 4, 2021Inventors: CHIA-YING LIU, WU-ZANG YANG, CHIA-JUNG LIU, CHI-CHIH HUANG
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Patent number: 10121809Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters.Type: GrantFiled: September 13, 2016Date of Patent: November 6, 2018Assignee: OmniVision Technologies, Inc.Inventors: Chin-Poh Pang, Boyang Zhang, Chia-Ying Liu, Wu-Zang Yang, Chih-Wei Hsiung, Chun-Yung Ai
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Publication number: 20180076247Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters.Type: ApplicationFiled: September 13, 2016Publication date: March 15, 2018Inventors: Chin-Poh Pang, Boyang Zhang, Chia-Ying Liu, Wu-Zang Yang, Chih-Wei Hsiung, Chun-Yung Ai
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Patent number: 9735196Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.Type: GrantFiled: October 5, 2016Date of Patent: August 15, 2017Assignee: OmniVision Technologies, Inc.Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Patent number: 9659989Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material, and doped regions surrounding the photodiode, at least in part. The doped regions include a doped portion of the semiconductor material. Deep trench isolation structures are disposed in the doped regions, and surround the photodiode at least in part. The deep trench isolation structures include a SiGe layer disposed on side walls of the deep trench isolation structures, a high-k dielectric disposed on the SiGe layer, and a filler material.Type: GrantFiled: April 19, 2016Date of Patent: May 23, 2017Assignee: OmniVision Technologies, Inc.Inventors: Chun-Yung Ai, Chia-Ying Liu, Wu-Zang Yang
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Publication number: 20170025468Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.Type: ApplicationFiled: October 5, 2016Publication date: January 26, 2017Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Patent number: 9520431Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.Type: GrantFiled: October 3, 2014Date of Patent: December 13, 2016Assignee: OmniVision Technologies, Inc.Inventors: Wei Zheng, Chia-Ying Liu, Chun-Yung Ai, Wu-Zang Yang, Chih-Wei Hsiung, Chen-Wei Lu
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Patent number: 9490282Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.Type: GrantFiled: March 19, 2015Date of Patent: November 8, 2016Assignee: OmniVision Technologies, Inc.Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Publication number: 20160276380Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.Type: ApplicationFiled: March 19, 2015Publication date: September 22, 2016Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Publication number: 20160099266Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.Type: ApplicationFiled: October 3, 2014Publication date: April 7, 2016Inventors: Wei Zheng, Chia-Ying Liu, Chun-Yung Ai, Wu-Zang Yang, Chih-Wei Hsiung, Chen-Wei Lu