Abstract: A reclaiming system for use with bulk material includes a storage structure, an elongated mechanical reclaimer, and an aeration system for delivering a pressurized gas into bulk material located within the storage structure. The storage structure comprising a floor having a perimeter wall upstanding therefrom, the floor and perimeter wall bounding a chamber adapted to hold bulk material, the floor having a passageway formed thereon. The elongated mechanical reclaimer has a first end and an opposing second end, the first end being disposed adjacent to the passageway and the second end being rotatable about the first end. The aeration system is located adjacent to the floor, adjacent to the mechanical reclaimer or is integrated into the mechanical reclaimer. By using the mechanical reclaimer in conjunction with the aeration system, the bulk material is effectively removed from the storage structure through the passageway.

Abstract: A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.