Patents by Inventor Xiancan Deng

Xiancan Deng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of heating a semiconductor substrate
    Patent number: 6547978
    Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature.
    Type: Grant
    Filed: December 13, 2001
    Date of Patent: April 15, 2003
    Assignee: Applied Materials Inc.
    Inventors: Yan Ye, Allen Zhao, Xiancan Deng, Diana Xiaobing Ma, Chang-Lin Hsieh
  • Control of patterned etching in semiconductor features
    Patent number: 6534416
    Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface.
    Type: Grant
    Filed: August 11, 2000
    Date of Patent: March 18, 2003
    Assignee: Applied Materials Inc.
    Inventors: Yan Ye, Allen Zhao, Xiancan Deng, Diana Xiaobing Ma
  • Copper etch using HCl and HBR chemistry
    Patent number: 6489247
    Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface.
    Type: Grant
    Filed: September 8, 1999
    Date of Patent: December 3, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Yan Ye, Allen Zhao, Xiancan Deng, Diana Xiaobing Ma
  • Method of heating a semiconductor substrate
    Publication number: 20020045354
    Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature.
    Type: Application
    Filed: December 13, 2001
    Publication date: April 18, 2002
    Inventors: Yan Ye, Allen Zhao, Xiancan Deng, Diana Xiaobing Ma, Chang-Lin Hsieh
  • Copper etch using HCI and HBr chemistry
    Patent number: 6008140
    Abstract: Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface.
    Type: Grant
    Filed: August 13, 1997
    Date of Patent: December 28, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Yan Ye, Allen Zhao, Xiancan Deng, Diana Xiaobing Ma