Patents by Inventor Xiangchun Kong
Xiangchun Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10199504Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.Type: GrantFiled: August 5, 2015Date of Patent: February 5, 2019Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Zhengliang Li, Qi Yao, Zhanfeng Cao, Bin Zhang, Xiaolong He, Jincheng Gao, Xiangchun Kong, Wei Zhang
-
Patent number: 10186617Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.Type: GrantFiled: September 28, 2017Date of Patent: January 22, 2019Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jincheng Gao, Bin Zhang, Xiaolong He, Xiangchun Kong, Qi Yao, Zhanfeng Cao, Zhengliang Li
-
Patent number: 10175548Abstract: A display device, a manufacturing method thereof, a driving method thereof and a display apparatus. The display device includes: a display panel; and an electrochromic device located on a light exiting side of the display panel. The electrochromic device and the display panel share a first base substrate and a first transparent electrode in the display panel that are close to the light exiting side of the display panel.Type: GrantFiled: March 31, 2016Date of Patent: January 8, 2019Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Xuefei Sun, Zhengliang Li, Zhanfeng Cao, Xiangchun Kong, Qi Yao, Jincheng Gao, Feng Guan, Xiaolong He, Bin Zhang, Wei Zhang
-
Patent number: 10115765Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.Type: GrantFiled: August 10, 2015Date of Patent: October 30, 2018Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jincheng Gao, Zhanfeng Cao, Qi Yao, Zhengliang Li, Xiaolong He, Bin Zhang, Xiangchun Kong, Wei Zhang
-
Patent number: 10049612Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.Type: GrantFiled: April 14, 2015Date of Patent: August 14, 2018Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Bin Zhang, Zhanfeng Cao, Xiangchun Kong, Qi Yao, Jincheng Gao, Zhengliang Li, Xiaolong He
-
Patent number: 10019934Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.Type: GrantFiled: April 14, 2015Date of Patent: July 10, 2018Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Bin Zhang, Zhanfeng Cao, Xiangchun Kong, Qi Yao, Jincheng Gao, Zhengliang Li, Xiaolong He
-
Patent number: 9905705Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.Type: GrantFiled: April 12, 2016Date of Patent: February 27, 2018Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Xiangchun Kong, Zhanfeng Cao, Wei Zhang, Bin Zhang, Xiaolong He, Jincheng Gao, Qi Yao, Zhengliang Li, Chuanxiang Xu
-
Patent number: 9873773Abstract: Disclosed are a composite material and a method for preparing the same. The composite material is consisted of TiO2 and BaZn1.2Co0.8Fe16O27. The composite material of the invention has the advantages of high absorption frequency band, good compatibility and wide frequency band, and it is applicable for the shell protection material of a mobile phone or a TV set, thereby absorbing the electromagnetic wave band that is the most harmful to human bodies, without influencing the normal communication function of an electronic device, for example, a mobile phone.Type: GrantFiled: April 21, 2016Date of Patent: January 23, 2018Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Wei Zhang, Xiangchun Kong
-
Publication number: 20180019346Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.Type: ApplicationFiled: September 28, 2017Publication date: January 18, 2018Inventors: Jincheng GAO, Bin Zhang, Xiaolong He, Xiangchun Kong, Qi Yao, Zhanfeng Cao, Zhengliang Li
-
Patent number: 9835921Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a plurality of pixel unit regions each including a thin-film transistor (TFTs) and a pixel electrode. A first insulating layer provided with a first through hole and a second through hole is formed between an active layer of the TFT and the pixel electrode. A source electrode of the TFT is connected with the active layer through the first through hole. A drain electrode of the TFT is lapped onto the pixel electrode and connected with the active layer through the second through hole. The array substrate can prevent the oxidization of metal such as copper in the process of patterning a transparent conductive film.Type: GrantFiled: September 18, 2014Date of Patent: December 5, 2017Assignee: BOE Technology Group Co., Ltd.Inventors: Zhanfeng Cao, Luke Ding, Wenlin Zhang, Xiangchun Kong, Feng Zhang, Qi Yao, Zhixing Zhang
-
Patent number: 9812579Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.Type: GrantFiled: May 9, 2016Date of Patent: November 7, 2017Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jincheng Gao, Bin Zhang, Xiaolong He, Xiangchun Kong, Qi Yao, Zhanfeng Cao, Zhengliang Li
-
Patent number: 9812469Abstract: An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.Type: GrantFiled: May 10, 2016Date of Patent: November 7, 2017Assignee: BOE Technology Group Co., Ltd.Inventors: Zhanfeng Cao, Feng Zhang, Bin Zhang, Xiaolong He, Jincheng Gao, Qi Yao, Zhengliang Li, Xiangchun Kong
-
Patent number: 9735194Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode.Type: GrantFiled: April 1, 2016Date of Patent: August 15, 2017Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jincheng Gao, Zhanfeng Cao, Xiangchun Kong, Qi Yao, Zhengliang Li, Bin Zhang, Xiaolong He
-
Patent number: 9704833Abstract: A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific color. The LED unit includes an LED semiconductor chip emitting light of a specific color. The LED semiconductor chips of the plurality of sub-pixel units are homochromatic LED semiconductor chips emitting light of a same color. In each sub-pixel unit, a position of the filter layer corresponds to a position of the LED semiconductor chip, and the filter layer is located on a side of the LED semiconductor chip that emits light.Type: GrantFiled: March 20, 2014Date of Patent: July 11, 2017Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Xiangchun Kong, Zhanfeng Cao, Qi Yao, Luke Ding
-
Publication number: 20170139246Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a plurality of pixel unit regions each including a thin-film transistor (TFTs) and a pixel electrode. A first insulating layer provided with a first through hole and a second through hole is formed between an active layer of the TFT and the pixel electrode. A source electrode of the TFT is connected with the active layer through the first through hole. A drain electrode of the TFT is lapped onto the pixel electrode and connected with the active layer through the second through hole. The array substrate can prevent the oxidization of metal such as copper in the process of patterning a transparent conductive film.Type: ApplicationFiled: September 18, 2014Publication date: May 18, 2017Inventors: Zhanfeng CAO, Luke DING, Wenlin ZHANG, Xiangchun KONG, Feng ZHANG, Qi YAO, Zhixing ZHANG
-
Publication number: 20170098714Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.Type: ApplicationFiled: August 5, 2015Publication date: April 6, 2017Inventors: Zhengliang Li, Qi Yao, Zhanfeng Cao, Bin Zhang, Xiaolong He, Jincheng Gao, Xiangchun Kong, Wei Zhang
-
Patent number: 9583646Abstract: A bottom-emitting substrate, a display device and a method for manufacturing the bottom emitting substrate are provided. The bottom-emitting substrate comprises: a base substrate (1); a black matrix layer (2) with a plurality of opening regions and a plurality of non-opening regions disposed on the base substrate (1); and an array substrate unit disposed on the black matrix layer (2), projections of metal layers in the array substrate unit on the black matrix layer (2) locating within the plurality of non-opening regions of the black matrix layer (2). A method for manufacturing the bottom-emitting substrate and a display device comprising the bottom-emitting substrate are also provided.Type: GrantFiled: June 5, 2014Date of Patent: February 28, 2017Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Shi Shu, Jingxia Gu, Xiangchun Kong, Feng Zhang, Guanbao Hui
-
Publication number: 20170005110Abstract: An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.Type: ApplicationFiled: May 10, 2016Publication date: January 5, 2017Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Zhanfeng CAO, Feng ZHANG, Bin ZHANG, Xiaolong HE, Jincheng GAO, Qi YAO, Zhengliang LI, Xiangchun KONG
-
Publication number: 20160380114Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.Type: ApplicationFiled: April 12, 2016Publication date: December 29, 2016Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Xiangchun KONG, Zhanfeng CAO, Wei ZHANG, Bin ZHANG, Xiaolong HE, Jincheng GAO, Qi YAO, Zhengliang LI, Chuanxiang XU
-
Publication number: 20160358539Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.Type: ApplicationFiled: April 14, 2015Publication date: December 8, 2016Inventors: Bin Zhang, Zhanfeng Cao, Xiangchun Kong, Qi Yao, Jincheng Gao, Zhengliang Li, Xiaolong He