Patents by Inventor Xiang Yu Yao

Xiang Yu Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming a semiconductor structure using a combination of planarizing methods and electropolishing
    Publication number: 20040253809
    Abstract: A method for planarizing and electropolishing a conductive layer on a semiconductor structure includes forming a dielectric layer with recessed areas and non-recessed areas on the semiconductor wafer. A conductive layer is formed over the dielectric layer to cover the recessed areas and non-recessed areas. The surface of the conductive layer is then planarized to reduce variations in the topology of the surface. The planarized conductive layer is then electropolished to expose the non-recessed area.
    Type: Application
    Filed: August 10, 2004
    Publication date: December 16, 2004
    Inventors: Xiang Yu Yao, Ru Kao Chang, Peihaur Yih, Hui Wang
  • Mixed frequency RF generator coupled to the gas distribution system
    Patent number: 6668752
    Abstract: The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.
    Type: Grant
    Filed: June 16, 1998
    Date of Patent: December 30, 2003
    Assignee: Applied Materials Inc
    Inventor: Xiang Yu Yao
  • REDUCING HYDROGEN CONCENTRATION IN PECVD AMORPHOUS SILICON CARBIDE FILMS.
    Publication number: 20030155074
    Abstract: The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.
    Type: Application
    Filed: June 16, 1998
    Publication date: August 21, 2003
    Inventor: XIANG YU YAO
  • Reducing hydrogen concentration in pecvd amorphous silicon carbide films
    Patent number: 5800878
    Abstract: The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.
    Type: Grant
    Filed: October 24, 1996
    Date of Patent: September 1, 1998
    Assignee: Applied Materials, Inc.
    Inventor: Xiang Yu Yao