Abstract: A readout circuit for a high-precision vibration sensor comprises an on-chip self-test circuit, a low-noise charge amplifier, a correlated double sampling circuit, a PID feedback control circuit, a phase compensation circuit and Sigma-Delta. A self-test signal is amplified by the low-noise charge amplifier, low-frequency noise and offsets are filtered out by the correlated double sampling circuit, then a self-test path and a working path of a vibration sensor are separated in the time domain by the PID feedback control circuit, the phase compensation circuit performs zero compensation and pole compensation on the signal, and Sigma-Delta converts an analog signal into a high-precision digital signal.

Abstract: The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.