Abstract: A semiconductor structure, a preparation method of the same, and a semiconductor device are provided. The semiconductor structure includes a substrate, including an active area. A first electrode layer is arranged on the substrate and electrically connected to the active area. The first electrode layer extends in a direction perpendicular to the substrate. A dielectric layer is arranged on a surface of the first electrode layer. A second electrode layer is arranged on a surface of the dielectric layer. Each of the surface of the first electrode layer and the surface of the dielectric layer are provided with an uneven structure.

Abstract: A refresh control circuit includes: a random output sub-circuit for sequentially receiving n single-row addresses and m single-row addresses in L single-row addresses, a single enabling duration of word lines pointed to by the n single-row addresses being greater than a preset duration, the m single-row addresses ranking top m in occurrence frequency, the L single-row addresses corresponding to word lines turned on between adjacent refresh commands, n being a natural number, and m being a positive integer; and for receiving a first random number which is a positive integer less than or equal to n+m, and then outputting an i-th received single-row address, i being equal to the first random number; and a row hammer address generation sub-circuit for outputting a row hammer address corresponding to the received single-row address acting as a refresh object corresponding to the refresh command.

Abstract: A refresh circuit and a memory. The refresh circuit includes: a row hammer address generation module, configured to receive a row activate command, a precharge command, and a single row address corresponding to the row activate command, and output a row hammer address corresponding to the single row address, where each of the single row addresses corresponds to a word line, the row activate command is configured to activate a word line pointed to by the single row address, and the precharge command is configured to inactivate the word line; and output the row hammer address if a single activation time of the word line is greater than a preset time; and a signal selector, configured to receive the row hammer address and a regular refresh address, and at least output the row hammer address.

Abstract: A refresh address counting circuit, a refresh address counting method, and a refresh address read-write circuit are provided. The refresh address counting circuit includes: a self-oscillation clock generation circuit, configured to generate, in each of refresh cycles, a self-oscillation clock signal based on at least one array activation signal upon acquiring a refresh signal; a self-oscillation mask circuit, configured to generate a self-oscillation mask signal under a preset refresh command; and a refresh address counter, configured to counting a refresh address based on the self-oscillation clock signal and the self-oscillation mask signal and to output a self-oscillation refresh address.

Abstract: The present disclosure provides a refresh control circuit and a memory. The refresh control circuit includes: a random capture module, configured to sequentially receive n single row addresses and randomly output m single row addresses among the n single row addresses, wherein the n>the m>1; a row hammer address generation module, connected to an output terminal of the random capture module, configured to analyze a single row address with highest frequency of occurrence among the m single row addresses, and configured to output a row hammer address corresponding to the single row address with highest frequency of occurrence; and a signal selector, configured to receive a conventional refresh address and the row hammer address and output address information, the address information being the row hammer address and the conventional refresh address, or the address information being the row hammer address.

Abstract: Embodiments of the present disclosure relate to an address selection circuit and a control method thereof, and a memory. The address selection circuit includes an address receiving circuit, a row hammer address generation circuit, and a decoding circuit. The address receiving circuit is configured to output a first address output signal in response to a first selection signal, where the first address output signal includes a received regular refresh address signal or an active address signal. The row hammer address generation circuit is configured to: generate a second address output signal and a row hammer address redundancy identifier according to the first selection signal, an actual active address signal, and the first address output signal. The decoding circuit is configured to: generate a target address and the actual active address signal according to the second address output signal and the row hammer address redundancy identifier.

Abstract: A preprocessing module receives a word line activation command and a clock signal and outputs a word line address corresponding to a current word line activation command as a word line address signal when a count value reaches a preset value. An address processing module counts all received word line address signals and outputs a word line address signal with the largest number of occurrences as a row hammer address. A first processing unit generates first and second supplementary refresh address according to the row hammer address. A second processing unit generates a normal refresh address according to a refresh command. A refresh unit performs a refresh operation according to an acquired address signal. A control unit selects to output a refresh address or control the refresh unit to select to receive a refresh address.

Abstract: Embodiments of the present disclosure provide a refresh circuit and a memory. The refresh circuit includes: a row hammer address generation module, configured to receive a row activate command, a precharge command, and a single row address corresponding to the row activate command, and output a row hammer address corresponding to the single row address, where each of the single row addresses corresponds to a word line, the row activate command is configured to activate a word line pointed to by the single row address, and the precharge command is configured to inactivate the word line; and output the row hammer address if a single activation time of the word line is greater than a preset time; and a signal selector, configured to receive the row hammer address and a regular refresh address, and at least output the row hammer address.

Abstract: The present disclosure provides a refresh control circuit and a memory. The refresh control circuit includes: a random capture module, configured to sequentially receive n single row addresses and randomly output m single row addresses among the n single row addresses, wherein the n>the m>1; a row hammer address generation module, connected to an output terminal of the random capture module, configured to analyze a single row address with highest frequency of occurrence among the m single row addresses, and configured to output a row hammer address corresponding to the single row address with highest frequency of occurrence; and a signal selector, configured to receive a conventional refresh address and the row hammer address and output address information, the address information being the row hammer address and the conventional refresh address, or the address information being the row hammer address.

Abstract: A refresh control circuit includes: a random output sub-circuit for sequentially receiving n single-row addresses and m single-row addresses in L single-row addresses, a single enabling duration of word lines pointed to by the n single-row addresses being greater than a preset duration, the m single-row addresses ranking top m in occurrence frequency, the L single-row addresses corresponding to word lines turned on between adjacent refresh commands, n being a natural number, and m being a positive integer; and for receiving a first random number which is a positive integer less than or equal to n+m, and then outputting an i-th received single-row address, i being equal to the first random number; and a row hammer address generation sub-circuit for outputting a row hammer address corresponding to the received single-row address acting as a refresh object corresponding to the refresh command.

Abstract: A preparation method of the semiconductor structure includes: providing a substrate including a core device region and an anti-fuse device region; forming a first dielectric layer covering the core device region and the anti-fuse device region; forming a second dielectric layer covering the first dielectric layer and having a dielectric constant larger than a dielectric constant of the first dielectric layer; removing the second dielectric layer on the anti-fuse device region; and forming a conductive layer covering the first dielectric layer on the anti-fuse device region and the second dielectric layer on the core device region.

Abstract: A semiconductor structure, a preparation method of the same, and a semiconductor device are provided. The semiconductor structure includes a substrate, including an active area. A first electrode layer is arranged on the substrate and electrically connected to the active area. The first electrode layer extends in a direction perpendicular to the substrate. A dielectric layer is arranged on a surface of the first electrode layer. A second electrode layer is arranged on a surface of the dielectric layer. Each of the surface of the first electrode layer and the surface of the dielectric layer are provided with an uneven structure.