Abstract: The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

Abstract: The present invention provides a semiconductor crystal growth device, comprising: a furnace body; a crucible disposed inside the furnace body for containing a silicon melt; a pulling unit disposed at a top portion of the furnace body for pulling out a silicon ingot from the silicon melt; and a heat shield unit including a flow tube that is barrel-shaped and disposed around the silicon ingot for rectifying argon gas input from the top portion of the furnace body and adjusting thermal field distribution between the silicon ingot and the silicon melt liquid surface, wherein, the heat shield unit further includes an adjustment unit disposed at a lower end inside the flow tube for adjusting a minimum distance between the heat shield unit and the silicon ingot.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a reflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the reflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein grooves are provided at the bottom of the inner wall of the reflector, so that the distance between the bottom of the reflector and the silicon crystal ingot in the direction of the magnetic field is greater than that in the direction perpendicular to the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a reflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the reflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein the bottom of the reflector is provided with downwardly convex steps, so that a distance between the bottom of the reflector and the silicon melt surface in the direction of the magnetic field is smaller than a distance between the bottom of the reflector and the silicon melt surface in the direction perpendicular to the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, used to remove the silicon melt body; a horizontal magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible arranged inside the furnace body for containing a silicon melt; a heater having a graphite cylinder arranged around the crucible for heating the silicon melt; a pulling device arranged on the top of the furnace body for pulling out the silicon crystal ingot from the silicon melt; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein a plurality of grooves are provided on the side wall of the graphite cylinder along the axis direction of the graphite cylinder, and a depth of the grooves in the direction of the magnetic field is smaller than a depth of the grooves perpendicular to the direction of the magnetic field.

Abstract: The present invention provides a semiconductor crystal growth apparatus, which comprises a furnace body, a crucible, a pulling device, a deflector, and a magnetic field applying device. The crucible is disposed inside the furnace body for containing silicon melt. The pulling device is disposed on the top of the furnace body for pulling a silicon ingot from the silicon melt. The deflector is in a barrel shape and is disposed in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot in a vertical direction and through the deflector. The magnetic field applying device is configured to apply a magnetic field to the silicon melt in the crucible, in which the distance between the bottom of the deflector and the liquid level of the silicon melt in the direction of the magnetic field is less than that between the bottom of the deflector and the silicon melt in the direction perpendicular to the direction of the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a deflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the deflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein the silicon crystal is pulled by the pulling device during the ingot passing through the deflector, the distance between the bottom of the deflector and the silicon crystal ingot in the direction of the magnetic field is greater than that in the direction perpendicular to the magnetic field.

Abstract: This invention provides method, device, system, and computer storage medium for crystal growth control of a shouldering process.

Abstract: The present application provides a draft tube of crystal growing furnace and the crystal growing furnace. The draft tube comprises an inner tube, an outer tube and a thermal insulating material sandwiched between the inner tube and the outer tube, wherein the inner tube has a thermal resistance lower than that of the outer tube. Accordingly, the outer tube having the higher thermal resistance reduces the heat transfer from the outer tube to the inner tube, thereby the temperature of the inner tube can be reduced, the heat radiation from the ingot surface to the inner tube can be enhanced, and the vertical temperature gradient of the ingot can be increased. At the same time, the temperature of the outer tube increases to reduce the condensation of silica vapor (SiOx) evaporated from the silicon melt surface, thereby impurity formation and dislocation defect caused by the SiOx fallen into the silicon melt can be prevented.

Abstract: This invention provides method, device, system, and computer storage medium for crystal growth control of a shouldering process. The method comprises: presetting a setting value of a crystal diameter variation at different stages of a shouldering process and a setting value of a crystal growth process parameter at different stages of the shouldering process; obtaining crystal diameters at different stages of the shouldering process and calculating a measured crystal diameter variation; comparing the measured crystal diameter variation with the setting value of the crystal diameter variation to obtain a difference as an input variable of PID algorithm; calculating an adjustment value of a crystal growth process parameter by PID algorithm as an output variable of PID algorithm; adding the adjustment value of the crystal growth process parameter and the setting value of the crystal growth process parameter to obtain a process parameter of an actual crystal growth process.

Abstract: This invention provides method, device, system, and computer storage medium for crystal growth control of a shouldering process.

Abstract: The present invention relates to a sulfur transfer additive for catalytic cracking of hydrocarbons and a catalytic cracking process of hydrocarbons using the sulfur transfer additive, said additive is a uniform liquid comprising at least two metal elements selected from the following three classes: a). alkaline earth metals, b). transition metals and P zone metals, and c). rare earth metals, and wherein there are at least two metal elements from the different classes. The present sulfur transfer additive can reduce the SOx content in the regenerator flue gas and the sulfur content in the light oil products at the same time, and has no negative effect on the activity and selectivity of the catalyst in the FCC system.

Abstract: An additive used in catalytic cracking of hydrocarbons, which is in the form of homogeneous liquid and comprises a composite metal compound, wherein said composite metal compound consists of the oxides, hydroxides, organic acid salts, inorganic acid salts or metal organic complex compounds of at least one of the 1st group metals and at least one of the 2nd group metals, wherein the 1st group metals are selected from the group consisting of the metals of the IIIA, IVA, VA, VIA groups of the Element Period Table, boron, silicon, phosphorous and tellurium; wherein the 2nd group metals are selected from the group consisting of alkali-earth metals, transition metals, and rare earth metals, is disclosed. A process of catalytic cracking of hydrocarbons, utilizing the additive is also disclosed. The additive can passivate metals and promote the oxidation of CO, and is operated easily with production cost decreased.

Abstract: An additive used in catalytic cracking of hydrocarbons, which is in the form of homogeneous liquid and comprises a composite metal compound, wherein said composite metal compound consists of the oxides, hydroxides, organic acid salts, inorganic acid salts or metal organic complex compounds of at least one of the 1st group metals and at least one of the 2nd group metals, wherein the 1st group metals are selected from the group consisting of the metals of the IIIA, IVA, VA, VIA groups of the Element Period Table, boron, silicon, phosphorous and tellurium; wherein the 2nd group metals are selected from the group consisting of alkali-earth metals, transition metals, and rare earth metals, is disclosed. A process of catalytic cracking of hydrocarbons, utilizing the additive is also disclosed. The additive can passivate metals and promote the oxidation of CO, and is operated easily with production cost decreased.

Abstract: The present invention relates to a sulfur transfer additive for catalytic cracking of hydrocarbons and a catalytic cracking process of hydrocarbons using the sulfur transfer additive, said additive is a uniform liquid comprising at least two metal elements selected from the following three classes: a). alkaline earth metals, b). transition metals and P zone metals, and c). rare earth metals, and wherein there are at least two metal elements from the different classes. The present sulfur transfer additive can reduce the SOx content in the regenerator flue gas and the sulfur content in the light oil products at the same time, and has no negative effect on the activity and selectivity of the catalyst in the FCC system.