Abstract: A maskless photolithoghrapic system includes a laser point-by-point scanning exposure unit, a plane-projection exposure unit, a mobile station and a calculation control unit that decomposes a pattern to be exposed, so that a pattern portion with a precision requirement below a pre-determined threshold is exposed by the laser point-by-point scanning exposure unit, and a pattern portion with a precision requirement greater than the pre-determined threshold is exposed by the plane-projection exposure unit; when conducting laser point-by-point scanning exposure on a sample on the mobile station, the light emitted by the laser point-by-point scanning exposure unit moves relative to the sample according to the pattern portion with a precision requirement below the pre-determined threshold; and when conducting plane-projection exposure on the sample, the plane-projection exposure unit emits light with a corresponding pattern shape onto the sample according to the graph with a precision requirement greater than the p

Abstract: A maskless photolithoghrapic system includes a laser point-by-point scanning exposure unit, a plane-projection exposure unit, a mobile station and a calculation control unit that decomposes a pattern to be exposed, so that a pattern portion with a precision requirement below a pre-determined threshold is exposed by the laser point-by-point scanning exposure unit, and a pattern portion with a precision requirement greater than the pre-determined threshold is exposed by the plane-projection exposure unit; when conducting laser point-by-point scanning exposure on a sample on the mobile station, the light emitted by the laser point-by-point scanning exposure unit moves relative to the sample according to the pattern portion with a precision requirement below the pre-determined threshold; and when conducting plane-projection exposure on the sample, the plane-projection exposure unit emits light with a corresponding pattern shape onto the sample according to the graph with a precision requirement greater than the p

Abstract: A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.

Abstract: A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.

Abstract: A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.

Abstract: A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.