Abstract: The present disclosure provides a display control method, a display control device, and a display device. The display control method includes performing a first display mode using an input image data. Performing the first display mode includes: rearranging the input image data to obtain a rearranged image data, the input image data including a valid line part for actual display on a display panel and an invalid line part for non-actual display on the display panel, and the rearranged image data including a rearranged valid line part and a rearranged invalid line part corresponding to the valid line part and the invalid line part, respectively; generating a first image display control signal and a first delay control signal corresponding to the rearranged image data; and outputting the rearranged image data, the first image display control signal, and the first delay control signal.

Abstract: A method for preparing an ecological foamed ceramic from lepidolite filter mud whole waste belongs to the field of environmental protection and resource reuse. The ecological foamed ceramic with excellent properties can be prepared by using lepidolite filter mud as the main raw materials, including ball milling, homogenization, drying, material distribution, and heat treatment. The amount of lepidolite filter mud in the present invention accounts for more than 90%, which is a whole waste utilization and can achieve high-value utilization of bulk lepidolite filter mud. The present invention uses a composite foaming agent combined with a foaming technology and has the advantages of rapid foaming and controllable pore size compared with a single foaming agent. The ecological foamed ceramic prepared by the present invention meets the industrial standard of CJ/T 299-2008 “Artificial ceramic filter material for water treatment” and has potential application value in domestic sewage treatment.

Abstract: The present invention provides a method for preferentially recovering manganese from waste lithium-rich manganese-based cathode material, the method comprising: step 1) calcination and leaching: mixing the waste lithium-rich manganese-based cathode material with ammonium sulfate and then performing low-temperature calcination, leaching the calcination product with water, and then performing solid-solution separation to obtain a leaching solution; step 2) complexing and manganese separating: adding ammonium sulfite to the leaching solution obtained in step 1) for a complex reaction to obtain manganese-rich residue; step 3) oxidation leaching: adding an oxidant to the manganese-rich residue obtained in step 2) to perform oxidation leaching, and adjusting the pH of the solution to obtain a manganese-rich solution; and step 4) extracting and stripping.

Abstract: Provided are a high-strength and high-plasticity hot-forming steel with oxidation resistance for automobiles and a hot-forming process thereof, and the hot-forming steel has chemical compositions in mass percentages as follows: C: 0.35%-50%, Si: ?0.20%, Mn: 1.50%-2.50%, P: 0.050%-0.10%, S?0.004%, Als: 0.02%-0.06%, Nb: 0.03%-0.07%, Ti: 0.020%-0.050%, V: 0.08%-0.15%, Cr: 1.50%-3.20%, Mo: 0.10%-0.30%, B: ?0.0040%, N?0.005%, the balance Fe and inevitable impurities. The hot-forming steel provided in the present invention has high oxidation resistance, high strength and plasticity, does not need atmosphere protection during hot forming, and does not need shot blasting treatment after hot forming.

Abstract: A fuse in form of breaking fusant by fusing breaking and mechanical breaking includes hollow shell; arc extinguishing medium filled in the shell; at least one piece of fusant arranged in the shell; and conductive terminals provided as penetrating through shell wall and capable to be connected to external circuit, two ends of the fusant are respectively connected with the conductive terminals, at least one breaking device that mechanically breaks the fusant is provided in the shell; driving device arranged outside the shell, after receiving external excitation signal, drives the breaking device to break the fusant in one of linear and rotational displacement modes or their combination; blocking structures are arranged between the breaking device and the shell wall; and the fusant located in the arc extinguishing medium is provided with weak positions where mechanical breaking strength of the fusant is reduced and fusing is easy to be achieved.

Abstract: The present disclosure provides an excitation fuse with a conductor and a fusant being sequentially broken, the excitation fuse comprising a housing and a cavity in the housing, wherein at least one conductor is provided to be inserted in the housing and the cavity and has two ends connected with an external circuit; at least one fusant is provided in parallel on the conductor; an excitation device and a breaking device are mounted in the cavity at one side of the conductor; the excitation device may receive an external excitation signal to act to drive the breaking device to sequentially form at least one fracture on the conductor and the fusant respectively; and at least one fracture on the conductor is connected in parallel with the fusant.

Abstract: The disclosure provides a method for processing data, and an electronic device. The method includes: obtaining first attribute information of input data and second attribute information of a computing device corresponding to the input data; selecting a target operator implementation mode from a plurality of candidate operator implementation modes based on the first attribute information and the second attribute information; determining a plurality of sub-operators included in an operator required for the input data from an operator library based on the target operator implementation mode, to generate the operator; and obtaining an operation result by performing an operation on the input data by the computing device based on the operator.

Abstract: A sleep-regulating tablet allowing release by stages and a preparation method thereof are provided. The tablet structurally consists of a drug-containing delayed-release tablet core, a drug-free stomach-soluble coating, a drug-free enteric coating, a drug-containing immediate-release shell, and a shell stomach-soluble coating sequentially from inside to outside. An ideal dual-stage timed drug release mode may be realized, and is especially suitable for a sleep-regulating drug, such as ramelteon.

Abstract: A data transmission apparatus includes: a first port and a second port which are selected by a first control signal; a first signal path and a second signal path which are selected by a second control signal. When a memory card satisfies a first condition, the first control signal selects the first port and the second control signal selects the first signal path, the data transmission apparatus connects the host device and the memory card via the first port and the first signal path and works in a first transmission mode. When the memory card satisfies a second condition, the first control signal selects the second port and the second control signal selects the second signal path, the data transmission apparatus connects the host device and the memory card via the second port and the second signal path and works in a second transmission mode.

Abstract: The present application relates to a semiconductor structure and its forming method. The semiconductor structure comprises a substrate; a first transistor that includes a first channel disposed within the substrate, and a first end disposed at surface of the substrate, the first end being adapted to connect with a first-type storage cell; a second transistor that includes a second channel disposed within the substrate, and a second end disposed at surface of the substrate, the second end being adapted to connect with a second-type storage cell, the second channel having a length greater than length of the first channel. The present application enables fabrication techniques of the first transistor and the second transistor compatible. Moreover, the present application is conducive to enhancing integration density of the storage cells of the first transistor and/or the second transistor in the memory lays foundation for enlarging the fields of application of the memory.

Abstract: The present invention relates to an extension structure and an optical system. The extension structure comprises a first connecting base and a second connecting base. One end of the first connecting base forms a first connecting end, and one end of the second connecting base forms a second connecting end. The first connecting base and the second connecting base can be connected in a relatively rotatable manner, and the rotation axis lines of the first connecting base and the second connecting base are parallel. The optical system is arranged in the extension structure. A surgical microscope, comprising a lens body, the extension structure connected to the lens body, a rotating structure connected to the extension structure, and an eyepiece connected to the rotating structure. The extension structure and the rotating structure enables the eyepiece to move up and down relative to the lens body, the adjustment region is large.

Abstract: A quantum device includes: a quantum chip, provided with an I/O port; and a superconducting substrate, provided with transmission lines on the superconducting substrate. Each of the transmission lines includes a first section and a second section that form an included angle, a bonding connection structure is formed between one end of the first section and the I/O port, a pad for connecting to a connector is formed at one end of the second section, and a distribution spacing between the first sections is smaller than a distribution spacing between the second sections. The second sections are distributed in a region away from the quantum chip. The first section connected to the 1/0 port via aluminum wire bonding can be wired at higher density. The size of the pad on a wiring spacing is reduced, and density of the transmission lines on the superconducting substrate is increased.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a transistor, including a control terminal, a first terminal, and a second terminal; a first magnetic memory structure, a bottom electrode of which is electrically connected to the first terminal of the transistor; a second magnetic memory structure, a top electrode of which is electrically connected to the first terminal of the transistor, the bottom electrode of the first magnetic memory structure is located in a same layer with a bottom electrode of the second magnetic memory structure; a first bit line, electrically connected to a top electrode of the first magnetic memory structure; a second bit line, electrically connected to the bottom electrode of the second magnetic memory structure; and a selection line, electrically connected to a second terminal of the transistor.

Abstract: Disclosed herein are liquid crystal-infused porous surfaces and methods of making and use thereof.

Abstract: A semiconductor structure includes: a substrate; a memory array, including a plurality of storage cells arranged in a first direction and a second direction, where each storage cell includes an active pillar including a first channel region and a second channel region that are arranged at intervals in a third direction; a word line structure, including a first word line extending in the first direction and a second word line extending in the second direction, where the first word line covers the first channel regions of the active pillars of the plurality of storage cells that are arranged at intervals in the first direction, and the second word line covers the second channel regions of the active pillars of the plurality of storage cells that are arranged at intervals in the second direction; and a common bit line, electrically connected to all the storage cells in the memory array.

Abstract: The present application makes public a magnetic memory and a reading/writing method thereof, which magnetic memory comprises at least one cell layer, and the cell layer includes a plurality of parallel second wires that are disposed in a second plane, the first plane being parallel to the second plane, and projections of the second wires onto the first plane intercrossing the first wires; a plurality of storage elements that are disposed between the first plane and the second plane, the storage elements including magnetic tunnel junctions and bi-directional gating components connected in series along a direction perpendicular to the first plane, the magnetic tunnel junctions being connected to the first wires, the bi-directional gating components being connected to the second wires, and the bi-directional gating components being configured to be conductive upon application of a threshold voltage and/or a threshold current.

Abstract: The present disclosure provides a semiconductor structure and a storage circuit that implements the storage structure of a magnetoresistive random access memory (MRAM) based on a dynamic random access memory (DRAM) fabrication platform.

Abstract: The present invention relates to a groundwater circulation well system with pressure-adjustable hydrodynamic cavitation, including a circulation well body, a sucked and injected water circulation assembly and a hydrodynamic cavitator. The sucked and injected water circulation assembly is based on a water suction and injection pump. The hydrodynamic cavitator is provided, inside a vortex chamber, with a vortex water inlet column capable of changing a water passing aperture. The hydrodynamic cavitator is capable of changing a bubbling pressure and a breaking pressure of hydrodynamic cavitation bubbles in the vortex water inlet column. The hydrodynamic cavitator generates vortices in the circulation well body to accelerate uniform mixing of a remediation agent and the groundwater. Energy from collapsing and bursting of the hydrodynamic cavitation bubbles activates the remediation agent such that contaminants in the groundwater are efficiently degraded.

Abstract: Embodiments provide a magnetic storage structure, a magnetic storage array structure, a control method, and a memory. The magnetic storage structure includes: two magnetic tunnel junctions, each of which includes a fixed layer and a free layer; spin-orbit coupling layers in one-to-one correspondence with the two magnetic tunnel junctions, where each of the spin-orbit coupling layers is positioned on a side of the free layer away from the fixed layer; a first transistor and a second transistor, where one of the spin-orbit coupling layers is electrically connected to a source terminal or a drain terminal of the first transistor, other one of the spin-orbit coupling layers is electrically connected to a source terminal or a drain terminal of the second transistor; and a third transistor, where a source terminal or a drain terminal of the third transistor is electrically connected to the fixed layers in the two magnetic tunnel junctions.

Abstract: Disclosed herein are a system, a method and a device for switching between different communications protocols. A head wearable display can transmit, to a console during a first session interval, a first request to switch from a first link using a first communication protocol to a second link using a second communication protocol. The first request can include at least one characteristic of the first link. The head wearable display can receive, from the console, a first response to the first request, to perform a switch from the first link to the second link. The first response can indicate a wake up time and a second session interval to perform the switch. The head wearable display can switch from the first link to the second link in the second session interval and after the wake up time.