Abstract: Provided are compounds of Formula (I), methods of using the compounds as SHP2 inhibitors, and pharmaceutical compositions comprising such compounds. The compounds are useful in treating SHP2-mediated diseases.

Abstract: This application discloses an electronic device, including a first folding portion, a second folding portion, a connecting portion, a flexible screen, a rotating shaft assembly, and a connecting rod assembly. The first folding portion is rotatably connected to the second folding portion through the connecting portion. The first folding portion, the second folding portion, and the connecting portion form a support structure. The rotating shaft assembly includes a rotating shaft. While the electronic device is being unfolded or folded, the first folding portion or the second folding portion rotate relative to the rotating shaft. The connecting rod assembly includes a first connecting rod and a second connecting rod. While the electronic device is being unfolded, the first connecting rod and the second connecting rod respectively drive the first folding portion and the second folding portion to be away from each other, and the connecting portion is increased.

Abstract: A semiconductor memory training method includes: selecting two adjacent reference voltages from a plurality of reference voltages as a first reference voltage and a second reference voltage; obtaining a first minimum margin value for the plurality of target signal lines under the first reference voltage; obtaining a second minimum margin value for the plurality of target signal lines under the second reference voltage, according to a minimum margin value for each target signal line under the second reference voltage; determining a target interval for an expected margin value according to the first minimum margin value and the second minimum margin value, the expected margin value being the maximum one among the minimum margin values for the plurality of target signal lines under the plurality of reference voltages; and searching for the expected margin value in the target interval.

Abstract: The present disclosure provides a memory test method. The method includes: determining a refresh cycle T, a designed attack resistance frequency F, and a single row read time t of a target repository; determining an attack row quantity N based on the refresh cycle T, the designed attack resistance frequency F, and the single row read time t; determining a group of target attack rows in the target repository based on a value of the attack row quantity N, where the group of target attack rows include N target attack rows, and at least two of the N target attack rows are spaced apart by one row; detecting, after reading the N target attack rows for X consecutive times, whether data exception occurs in all adjacent rows of the target attack rows, to complete one attack test.

Abstract: The present application relates to a semiconductor memory training method and related devices, belonging to the technical field of semiconductors. The method comprises: obtaining a stored historical training result of a semiconductor memory, the historical training result comprising a historical expected delay value and a historical expected voltage; setting a delay threshold and a current training voltage range, the delay threshold being less than or equal to the historical expected delay value, the current training voltage range comprising the historical expected voltage; obtaining a current minimum delay value for the semiconductor memory under the historical expected voltage; and using the stored historical training result as a current training result of the semiconductor memory, if the current minimum delay value for the semiconductor memory under the historical expected voltage is no less than the delay threshold.

Abstract: A collaborative aggregation trading method for consuming clean energy includes: acquiring related data of clean energy power generation companies, the demand-side resources and energy storage service providers; acquiring a trading quotation and acquiring self-regulating ability data and regulating fees of shared energy storage service providers; performing trading of collaboratively consuming the clean energy through the demand-side resources and the shared energy storage: when the power generation output value exceeds the maximum regulating ability of user demands and the demand-side resources, storing the redundant power into shared energy storage systems for standby application; when the power generation output value is lower than the minimum operation load level of the user demands and the demand-side resources, calling the shared energy storage service providers participating in the trading according to energy storage ranking indexes, to acquire required power from the shared energy storage systems; and

Abstract: The invention relates to a bromodomain inhibitor. The invention also provides compositions and formulations comprising such compounds, and methods of using and preparing such compounds.

Abstract: The invention relates to a bromodomain inhibitor. The invention also provides compositions and formulations comprising such compounds, and methods of using and preparing such compounds.

Abstract: A semiconductor memory training method includes: selecting two adjacent reference voltages from a plurality of reference voltages as a first reference voltage and a second reference voltage; obtaining a first minimum margin value for the plurality of target signal lines under the first reference voltage; obtaining a second minimum margin value for the plurality of target signal lines under the second reference voltage, according to a minimum margin value for each target signal line under the second reference voltage; determining a target interval for an expected margin value according to the first minimum margin value and the second minimum margin value, the expected margin value being the maximum one among the minimum margin values for the plurality of target signal lines under the plurality of reference voltages; and searching for the expected margin value in the target interval.

Abstract: The application relates to a fluidized adsorption device and a fluidized adsorption method for sewage treatment. The fluidized adsorption device comprises a fluidized adsorption column and a reflux device, wherein the fluidized adsorption column is consisted of a water outlet area, a fluidized adsorption area and a water inlet area from top to bottom; the reflux device includes top, middle and bottom reflux ports, and related reflux tubes; and the top reflux port and the bottom reflux port are activated during adsorption, and the middle reflux port and the bottom reflux port are activated during adsorbent replacement, such that the fluidized adsorption column can run continuously.

Abstract: An azatricyclic compound (as represented by Formula I) which acts as an inhibitor of fibroblast growth factor receptors (FGFR), as well as a pharmaceutical composition thereof, a preparation method, and a use therefor in the treatment of FGFR-mediated diseases are provided. The azatricyclic compound exerts an effect by means of participating in the regulation of a plurality of processes such as cell proliferation, apoptosis, migration, neovascularization, and the like.

Abstract: The present application relates to a semiconductor memory training method and related devices, belonging to the technical field of semiconductors. The method comprises: obtaining the stored historical training result of a semiconductor memory, the historical training result comprising a historical expected delay value and a historical expected voltage; setting a delay threshold and a current training voltage range, the delay threshold being less than or equal to the historical expected delay value, the current training voltage range comprising the historical expected voltage; obtaining a current minimum delay value for the semiconductor memory under the historical expected voltage; and using the stored historical training result as a current training result of the semiconductor memory, if the current minimum delay value for the semiconductor memory under the historical expected voltage is no less than the delay threshold.

Abstract: The present disclosure provides a memory test method. The method includes: determining a refresh cycle T, a designed attack resistance frequency F, and a single row read time t of a target repository; determining an attack row quantity N based on the refresh cycle T, the designed attack resistance frequency F, and the single row read time t; determining a group of target attack rows in the target repository based on a value of the attack row quantity N, where the group of target attack rows include N target attack rows, and at least two of the N target attack rows are spaced apart by one row; detecting, after reading the N target attack rows for X consecutive times, whether data exception occurs in all adjacent rows of the target attack rows, to complete one attack test.

Abstract: Disclosed is a split type continuous operation micro-grid dynamic membrane bioreactor. The split type continuous operation micro-grid dynamic membrane bioreactor comprises a biological treatment unit and a drum type dynamic membrane filtration unit, wherein the biological treatment unit comprises a microbiological treatment tank, and a water inlet pipe is arranged on the microbiological treatment tank; the drum type dynamic membrane filtration unit comprises a filter tank, and a drum micro-grid dynamic membrane mechanism is arranged in the filter tank; the drum micro-grid dynamic membrane mechanism comprises a filter drum, a backwashing device is arranged above the filter drum, and a sludge collecting bank is arranged in the filter drum; a water outlet is formed in the bottom of the filter tank; a mixed liquid pipe is arranged between the microbiological treatment tank and the filter drum; and a sludge discharge header pipe is arranged on the sludge collecting tank.

Abstract: Disclosed is a compound as a fibroblast growth factor receptor 4 (FGFR4) inhibitor (as shown in formula (I)), and a pharmaceutical composition thereof and a preparation method therefor, as well as the use of same in the treatment of FGFR4-mediated diseases. The above-mentioned compounds act by participating in a number of processes, such as regulating cell proliferation, apoptosis, migration, neovascularization.

Abstract: A maleate, mesylate, benzene sulfonate, hydrochloride, phosphate, L-tartrate, L-malate, citrate, and fumarate of a compound represented by structural formula I, various crystal forms of each salt form, and a preparation method and application thereof.