Patents by Inventor Xiaoge Zeng
Xiaoge Zeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11502215Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region.Type: GrantFiled: February 23, 2021Date of Patent: November 15, 2022Assignee: Hewlett Packard Enterprise Development LPInventors: Yuan Yuan, Di Liang, Xiaoge Zeng, Zhihong Huang
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Publication number: 20220271186Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region.Type: ApplicationFiled: February 23, 2021Publication date: August 25, 2022Inventors: Yuan Yuan, Di Liang, Xiaoge Zeng, Zhihong Huang
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Publication number: 20220138371Abstract: A method for simulating a photodetector behavior includes: receiving an input waveform for an photodetector; receiving an input optical power and a reverse bias voltage for the photodetector; searching for, in a lookup-table library, model parameters for a photodetector behavior model based on the input optical power and the reverse bias voltage; and outputting a second waveform from the photodetector behavior model, where the second waveform is indicative of an electrical response of the photodetector receiving the input waveform.Type: ApplicationFiled: October 29, 2020Publication date: May 5, 2022Inventors: Jinsung Youn, Xiaoge Zeng, Mir Ashkan Seyedi
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Publication number: 20220123159Abstract: Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.Type: ApplicationFiled: October 16, 2020Publication date: April 21, 2022Inventors: Yuan Yuan, Zhihong Huang, Di Liang, Xiaoge Zeng
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Patent number: 11227967Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.Type: GrantFiled: November 12, 2020Date of Patent: January 18, 2022Assignee: Hewlett Packard Enterprise Development LPInventors: Xiaoge Zeng, Zhihong Huang, Di Liang
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Patent number: 11056603Abstract: Resonant cavity photodetector structures which integrate photodetection and filtering capabilities is described. A resonant cavity photodetector structure generally can comprise a region including a resonator, and an absorption region that can be integrated into a cavity of the resonator. The resonator can perform filtering that is suitable for high-bandwidth optical communications, such as Dense Wavelength Multiplexing (DWDM). In some cases, the resonator is a microring resonator. An absorption region can include a photodiode which performs optical energy detection acting as a photodetector, such as an avalanche photodiode (APD) wherein the photodiode. A coupling distance between the resonator region and the absorption region can be controlled, which allows control of a coupling strength between an optical mode of the resonator and the absorption region such that a quality factor (Q-factor) can be tuned.Type: GrantFiled: September 12, 2019Date of Patent: July 6, 2021Inventors: Zhihong Huang, Xiaoge Zeng, Wayne Victor Sorin
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Publication number: 20210083138Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.Type: ApplicationFiled: November 12, 2020Publication date: March 18, 2021Inventors: Xiaoge Zeng, Zhihong Huang, Di Liang
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Patent number: 10897119Abstract: Techniques and circuitry for a semiconductor laser with enhanced lasing wavelengths stabilization are described. A semiconductor laser can generate an optical signal (e.g., single or multi-wavelength), for use in a Dense Wavelength Division Multiplexing (DWDM) interconnect system. The stabilization circuitry can include temperature sensor circuitry that measures an operational temperature of the semiconductor laser, and a feedback controller that can determine a temperature-induced wavelength shift that may be experienced by the multi-wavelength optical signal based on the laser's temperature. The feedback controller is also configured to generate a compensation signal that is determined to cause a complimentary shift in the multi-wavelength optical signal, where the complimentary shift can compensate for the temperature-induced wavelength shift.Type: GrantFiled: September 13, 2019Date of Patent: January 19, 2021Assignee: Hewlett Packard Enterprise Development LPInventors: Geza Kurczveil, Di Liang, Zhihong Huang, Xiaoge Zeng, Raymond G. Beausoleil
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Publication number: 20210013356Abstract: Resonant cavity photodetector structures which integrate photodetection and filtering capabilities is described. A resonant cavity photodetector structure generally can comprise a region including a resonator, and an absorption region that can be integrated into a cavity of the resonator. The resonator can perform filtering that is suitable for high-bandwidth optical communications, such as Dense Wavelength Multiplexing (DWDM). In some cases, the resonator is a microring resonator. An absorption region can include a photodiode which performs optical energy detection acting as a photodetector, such as an avalanche photodiode (APD) wherein the photodiode. A coupling distance between the resonator region and the absorption region can be controlled, which allows control of a coupling strength between an optical mode of the resonator and the absorption region such that a quality factor (Q-factor) can be tuned.Type: ApplicationFiled: September 12, 2019Publication date: January 14, 2021Inventors: ZHIHONG HUANG, XIAOGE ZENG, WAYNE VICTOR SORIN
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Patent number: 10854768Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.Type: GrantFiled: December 20, 2018Date of Patent: December 1, 2020Assignee: Hewlett Packard Enterprise Development LPInventors: Xiaoge Zeng, Zhihong Huang, Di Liang
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Patent number: 10811549Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.Type: GrantFiled: January 29, 2019Date of Patent: October 20, 2020Assignee: Hewlett Packard Enterprise Development LPInventors: Geza Kurczveil, Di Liang, Bassem Tossoun, Chong Zhang, Xiaoge Zeng, Zhihong Huang, Raymond Beausoleil
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Patent number: 10797194Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The compositions of the absorbing region and the amplifying region may be optimized independently of each other. In the amplifying region, p-doped and n-doped structures are offset from each other both horizontally and vertically. Directly applying a voltage across a controlled region of the photocurrent path increases avalanche gain by shaping the electric field to overlap the photocurrent density. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.Type: GrantFiled: February 22, 2019Date of Patent: October 6, 2020Assignee: Hewlett Packard Enterprise Development LPInventors: Xiaoge Zeng, Zhihong Huang, Di Liang
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Publication number: 20200274019Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The compositions of the absorbing region and the amplifying region may be optimized independently of each other. In the amplifying region, p-doped and n-doped structures are offset from each other both horizontally and vertically. Directly applying a voltage across a controlled region of the photocurrent path increases avalanche gain by shaping the electric field to overlap the photocurrent density. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.Type: ApplicationFiled: February 22, 2019Publication date: August 27, 2020Inventors: Xiaoge Zeng, Zhihong Huang, Di Liang
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Publication number: 20200243701Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.Type: ApplicationFiled: January 29, 2019Publication date: July 30, 2020Inventors: Geza Kurczveil, Di Liang, Bassem Tossoun, Chong Zhang, Xiaoge Zeng, Zhihong Huang, Raymond Beausoleil
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Publication number: 20200203548Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.Type: ApplicationFiled: December 20, 2018Publication date: June 25, 2020Inventors: Xiaoge Zeng, Zhihong Huang, Di Liang
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Publication number: 20140193155Abstract: An optical resonator supports three resonance modes and having third-order optical nonlinearity. One or more waveguides are coupled to the three resonant modes. A waveguide input port is more strongly coupled to the first resonant mode than to the second and third resonant modes. A waveguide output port is more strongly coupled to at least one of the second and third resonant modes than to the first resonant mode. An optical filter has at least two optical resonators. The optical filter provides a passband having at least two poles and a transmission zero positioned outside the two poles. An optical demultiplexer includes first optical filter coupled in series with a second optical filter. Both optical filters provide a passband having at least two poles and a zero positioned outside the two poles. The zero of the first filter is located within the passband of the second filter.Type: ApplicationFiled: January 10, 2014Publication date: July 10, 2014Applicant: The Regents of the University of Colorado, a body corporateInventors: Milos Popovic, Mark Taylor Wade, Xiaoge Zeng