Abstract: The present invention discloses a power MOSFET device with an added tungsten spacer in its contact hole, and manufacturing methods for the device. The features of the device are as follows: It includes trench gate isolated in trench and source/body contacts formed in the contact hole, and the tungsten spacer between Ti/TiN barrier layer and aluminum metal layer, the tungsten spacer is deposited on the bottom corners of the contact hole to cover its bottom corners. The addition of tungsten spacer to the bottom corners of the contact hole can effectively eliminate the presence of pits at the corners and junction spiking due to poor step-coverage of the Ti/TiN barrier layer otherwise leading to direct contact of silicon with aluminum. Thus, the present invention prevents a power MOSFET device from failures due to Idss leakage thus insuring high device quality and yield.