Abstract: A password resetting method includes a user entering first authentication content based on prompts of a first electronic device, and when the first authentication content on the first electronic device matches second authentication content on an associated second electronic device, the first electronic device may allow and prompt the user to reset a lock screen password. The second electronic device is a device that has an association relationship with the first electronic device. Therefore, when forgetting the lock screen password, the user may reset the lock screen password by authenticating the second electronic device.

Abstract: A display panel includes: a display substrate, including a display region and a peripheral region located outside the display region. The peripheral region includes a bonding region; the display substrate specifically includes a base substrate, a plurality of fanout lines located on one side of the base substrate in the peripheral region and extending to the bonding region, and a plurality of first bonding electrodes electrically connected with the fanout lines in one-to-one correspondence in the bonding region; a drive chip, including a drive chip body and a plurality of pins located on a side of the drive chip body facing the display substrate; wherein the plurality of pins include a plurality of output pins bonded with the first bonding electrodes in one-to-one correspondence.

Abstract: The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top. A fully depleted built-in electric field is formed by means of a sandwich structure including the first n-type two-dimensional semiconductor layer, the p-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer, which can improve the light absorption efficiency while reducing the dark current of a device, and the separation rate and collection efficiency of photo-induced carriers are accelerated.

Abstract: The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a Bi2O2Se layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the Bi2O2Se layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the Bi2O2Se layer, and separately fabricating the metal source and the metal drain on the Bi2O2Se layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.

Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.

Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.

Abstract: This application discloses a feature effectiveness assessment method performed by an electronic device. The method including: constructing a feature combination set including a plurality of feature combinations, the feature combination being a combination of original features of to-be-recommended content; obtaining feature value sets respectively corresponding to the feature combinations, the feature value sets including feature values of combined features based on the corresponding feature combination; determining weight values corresponding to the combined features based on the feature values of the combined features in the corresponding feature value sets; constructing weight value sets corresponding to the feature combinations based on the weight values of the combined features; and respectively determining effectivenesses of the feature combinations based on the weight value sets of the feature combinations.

Abstract: The present disclosure provides a two-dimensional material detector with an asymmetrically integrated optical microstrip antenna, structurally including a metal reflecting surface, a dielectric spacer layer, a two-dimensional active material layer, a top source electrode, and a drain electrode integrated with a metal strip array. Self-driven photoresponse of a metal/two-dimensional material/metal structure is induced by a Schottky junction formed due to contact between the two-dimensional material and the metal. The asymmetrically integrated optical microstrip antennas break the symmetry between the two contact/two-dimensional material junctions. Light absorption in the contact/two-dimensional material junction integrated with optical patch antennas is significantly enhanced by efficient light in-coupling and intensified light localization; meanwhile, the extended boundary of the contact/two-dimensional material junction enlarges the photocurrent collection area.

Abstract: Taught herein is an integragted narrow bandpass filter array and a method of its fabrication. The filter array is a Fabry-Perot type of filter array, wherein the pass band changes with the thickness of the spacer layer. The integrated filter array comprises a substrate, a lower mirror stack, a spacer array, and an upper mirror stack. The spacer array is an array of varied thicknesses formed using a combinatorial deposition technique. The spacer array is used to control the pass band of each mini-size narrow bandpass filter and realizes the integration of narrow bandpass filters with different pass bands on a single substrate. The merit of this technique lies in its fabrication efficiency and finished product rate which are much higher than for conventional methods. The filter array is completely matched with detector arrays and functional in most of the important optical ranges.

Abstract: Taught herein is an integragted narrow bandpass filter array and a method of its fabrication. The filter array is a Fabry-Perot type of filter array, wherein the pass band changes with the thickness of the spacer layer. The integrated filter array comprises a substrate, a lower mirror stack, a spacer array, and an upper mirror stack. The spacer array is an array of varied thicknesses formed using a combinatorial deposition technique. The spacer array is used to control the pass band of each mini-size narrow bandpass filter and realizes the integration of narrow bandpass filters with different pass bands on a single substrate. The merit of this technique lies in its fabrication efficiency and finished product rate which are much higher than for conventional methods. The filter array is completely matched with detector arrays and functional in most of the important optical ranges.