Patents by Inventor Xiaowei HOU
Xiaowei HOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11951487Abstract: The present invention discloses a same-cavity integrated vertical high-speed multistage superfine pulverizing device and method for walnut shells. The same-cavity integrated vertical high-speed multistage superfine pulverizing device for walnut shells includes a double-channel sliding type feeding device and a same-cavity integrated vertical pulverizing device. The same-cavity integrated vertical pulverizing device includes a material lifting disc and a same-cavity integrated vertical pulverizing barrel. A first-stage coarse crushing region, a second-stage fine crushing region, a third-stage pneumatic impact micro pulverizing region and a fourth-stage airflow mill superfine pulverizing region are disposed in the same-cavity integrated vertical pulverizing barrel.Type: GrantFiled: May 9, 2020Date of Patent: April 9, 2024Assignees: QINGDAO UNIVERSITY OF TECHNOLOGY, RESEARCH INSTITUTE OF AGRICULTURAL MECHANIZATION, XINJIANG ACADEMY OF AGRICULTURAL SCIENCES, XINJIANG JIANG NING LIGHT INDUSTRIAL MACHINERY ENGINEERING TECHNOLOGY CO., LTD.Inventors: Changhe Li, Mingzheng Liu, Xiaoming Wang, Huimin Yang, Xinping Li, Xiangdong Liu, Tuluhon Turdi, Ji Che, Lianxing Gao, Huayang Zhao, Xiaowei Zhang, Yanbin Zhang, Yifei Chen, Yali Hou
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Publication number: 20230280376Abstract: A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.Type: ApplicationFiled: September 11, 2020Publication date: September 7, 2023Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Shengping ZHU, Po ZHANG, Peng WU
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Publication number: 20230213598Abstract: A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.Type: ApplicationFiled: July 15, 2020Publication date: July 6, 2023Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Juping LI, Po ZHANG, Peng WU
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Publication number: 20230026496Abstract: A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively, first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.Type: ApplicationFiled: July 15, 2020Publication date: January 26, 2023Inventors: Xiaowei HOU, Yang LV, Liangguang ZHENG, Junjie GUO, Juping LI, Po ZHANG
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Publication number: 20220260652Abstract: A micro-fluxgate sensor has a double-iron core assembly, a self-oscillating module, a current superimposing and amplifying module and a voltage acquisition module. The double-iron core assembly comprises a first iron core and a second iron core. The first iron core is provided with a first winding coil. The second iron core is provided with a second winding coil. The first winding coil and the second winding coil are respectively connected with an input end of the self-oscillating module, and an output end of the self-oscillating module is respectively connected with the current superimposing and amplifying module and the voltage acquisition module. The fluxgate sensor is simple in processing circuit without manual debugging and is easily integrated.Type: ApplicationFiled: November 19, 2019Publication date: August 18, 2022Inventors: Juping LI, Liangguang ZHENG, Xiaowei HOU, Tao JIANG, Junjie GUO, Zhujian CHEN, Po ZHANG, Fangliang ZHU, Hang ZHAO
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Patent number: 10739921Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first optical adjustment layer formed on the first surface; a first transparent conductive layer formed on the first optical adjustment layer; a first metal layer formed on the first transparent conductive layer; a second optical adjustment layer formed on the second surface; a second transparent conductive layer formed on the second optical adjustment layer; and a second metal layer formed on the second transparent conductive layer. At least one of the first optical adjustment layer and the second optical adjustment layer comprises a plurality of particles therein, such that a plurality of protrusions corresponding to the plurality of particles are formed on a surface of at least one of the first metal layer and the second metal layer.Type: GrantFiled: July 27, 2018Date of Patent: August 11, 2020Assignee: NANCHANG O-FILM DISPLAY TECHNOLOGY CO., LTDInventors: Hongyan Chen, Rongzhi Gu, Weiting Huang, Xiaowei Hou
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Patent number: 10392691Abstract: A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.Type: GrantFiled: August 10, 2016Date of Patent: August 27, 2019Assignee: NINGBO CRRC TIMES TRANSDUCER TECHNOLOGY CO., LTD.Inventors: Xiaowei Hou, Junjie Guo, Dacheng Ni, Fei Wang, Huaxiong Zheng, Liangguang Zheng, Juping Li
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Publication number: 20190095003Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first optical adjustment layer formed on the first surface; a first transparent conductive layer formed on the first optical adjustment layer; a first metal layer formed on the first transparent conductive layer; a second optical adjustment layer formed on the second surface; a second transparent conductive layer formed on the second optical adjustment layer; and a second metal layer formed on the second transparent conductive layer. At least one of the first optical adjustment layer and the second optical adjustment layer comprises a plurality of particles therein, such that a plurality of protrusions corresponding to the plurality of particles are formed on a surface of at least one of the first metal layer and the second metal layer.Type: ApplicationFiled: July 27, 2018Publication date: March 28, 2019Applicant: NANCHAGN O-FILM DISPLAY TECHNOLOGY CO.,LTDInventors: Hongyan CHEN, Rongzhi GU, Weiting HUANG, Xiaowei HOU
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Patent number: 10173400Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.Type: GrantFiled: June 29, 2017Date of Patent: January 8, 2019Assignees: NANCHANG O-FILM DISPLAY TECHNOLOGY CO., LTD., SHENZHEN O-FILM TECH. CO., LTD.Inventors: Shuang Du, Peihong Wang, Xiaowei Hou
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Publication number: 20180245204Abstract: A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a single crystal mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.Type: ApplicationFiled: August 10, 2016Publication date: August 30, 2018Applicant: NINGBO CRRC TIMES TRANSDUCER TECHNOLOGY CO., LTD.Inventors: Xiaowei HOU, Junjie GUO, Dacheng NI, Fei WANG, Huaxiong ZHENG, Liangguang ZHENG, Juping LI
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Publication number: 20180170016Abstract: A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.Type: ApplicationFiled: June 29, 2017Publication date: June 21, 2018Applicants: NANCHANG O-FILM DISPLAY TECHNOLOGY CO., LTD., SHENZHEN O-FILM TECH. CO., LTD.Inventors: Shuang DU, Peihong WANG, Xiaowei HOU