Patents by Inventor Xichong Chen

Xichong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for treatment of deposition reactor
    Patent number: 11967488
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: April 23, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20240014012
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: May 16, 2022
    Publication date: January 11, 2024
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20230230813
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: May 16, 2022
    Publication date: July 20, 2023
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20220277937
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: May 16, 2022
    Publication date: September 1, 2022
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD FOR FORMING A DOPED METAL CARBIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20210328036
    Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Inventors: Dong Li, Peng-Fu Hsu, Petri Raisanen, Moataz Bellah Mousa, Ward Johnson, Xichong Chen
  • Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
    Patent number: 11056567
    Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: July 6, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Dong Li, Peng-Fu Hsu, Petri Raisanen, Moataz Bellah Mousa, Ward Johnson, Xichong Chen
  • METHOD OF FORMING A DOPED METAL CARBIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20190348515
    Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
    Type: Application
    Filed: May 1, 2019
    Publication date: November 14, 2019
    Inventors: Dong Li, Peng-Fu Hsu, Petri Raisanen, Moataz Bellah Mousa, Ward Johnson, Xichong Chen
  • SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20160376700
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: September 12, 2016
    Publication date: December 29, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20160115590
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 28, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Method for treatment of deposition reactor
    Patent number: 9228259
    Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: January 5, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
    Publication number: 20140220247
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 28, 2014
    Publication date: August 7, 2014
    Applicant: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen