Patents by Inventor Xin E. Chen

Xin E. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5976429
    Abstract: A dense, self-sintered silicon carbide/carbon-graphite composite material and a process for producing the composite material. The composite material includes a silicon carbide matrix, between 2 and 30 percent by weight carbon-graphite, and small amounts of sintering aids such as boron and free carbon. The silicon carbide has an average grain size between 2 and 15 .mu.m, and the carbon-graphite has an average grain size between 10 and 75 .mu.m, the average grain size of the carbon-graphite being greater than the average grain size of the silicon carbide. The composite material has a density of at least 80 percent of theoretical density as determined by the rule of mixtures for a composite material. This density is achieved with minimal microcracking at a high graphite loading with large graphite particles. The composite material exhibits good lubricity and wear characteristics, resulting in improved tribological performance.
    Type: Grant
    Filed: November 7, 1994
    Date of Patent: November 2, 1999
    Assignee: The Morgan Crucible Company, PLC
    Inventors: Xin E. Chen, Mark E. Pfaff
  • Patent number: 5656563
    Abstract: A dense, self-sintered silicon carbide/carbon-graphite composite material and a process for producing the composite material is disclosed. The composite material comprises a silicon carbide matrix, between 2 and 30 percent by weight carbon-graphite, and small amounts of sintering aids such as boron and free carbon. The silicon carbide has an average grain size between 2 and 15 .mu.m, and the carbon-graphite has an average grain size between 10 and 75 .mu.m, the average grain size of the carbon-graphite being greater than the average grain size of the silicon-carbide. The composite material has a density of at least 80 percent of theoretical density as determined by the rule of mixtures for a composite material. This density is achieved with minimal microcracking at a high graphite loading with large graphite particles. The composite material exhibits good lubricity and wear characteristics, resulting in improved tribological performance.
    Type: Grant
    Filed: June 2, 1995
    Date of Patent: August 12, 1997
    Assignee: The Morgan Crucible Company plc
    Inventors: Xin E. Chen, Mark E. Pfaff
  • Patent number: 5422322
    Abstract: A dense, self-sintered silicon carbide/carbon-graphite composite material and a process for producing the composite material is disclosed. The composite material comprises a silicon carbide matrix, between 2 and 30 percent by weight carbon-graphite, and small amounts of sintering aids such as boron and free carbon. The silicon carbide has an average grain size between 2 and 15 .mu.m, and the carbon-graphite has an average grain size between 10 and 75 .mu.m, the average grain size of the carbon-graphite being greater than the average grain size of the silicon carbide. The composite material has a density of at least 80 percent of theoretical density as determined by the rule of mixtures for a composite material. This density is achieved with minimal microcracking at a high graphite loading with large graphite particles. The composite material exhibits good lubricity and wear characteristics, resulting in improved tribological performance.
    Type: Grant
    Filed: February 10, 1993
    Date of Patent: June 6, 1995
    Assignee: The Stackpole Corporation
    Inventors: Xin E. Chen, Mark E. Pfaff