Abstract: A cross-section processing and observation method performed by a cross-section processing and observation apparatus, the method comprising: a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections, wherein, in a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed.

Abstract: A crystal analysis apparatus includes: a measurement data storage configured to store electron back-scattering pattern (EBSP) data measured at electron beam irradiation points on a plurality of cross-sections of a sample formed substantially in parallel at prescribed intervals; a crystal orientation database configured to accumulate therein information of crystal orientations corresponding to EBSPs; and a map constructing unit that constructs a three-dimensional crystal orientation map based on distribution of crystal orientations in normal directions of a plurality of faces of a polyhedral image having the cross-sections arranged at the prescribed intervals by reading out the crystal orientations in the normal directions of the faces from the crystal orientation database on the basis of the EBSP data stored in the measurement data storage.

Abstract: Provided is a composite charged particle beam apparatus, including: an electron beam column for irradiating a sample with an electron beam; an ion beam column for irradiating the sample with an ion beam to perform etching processing; a sample stage drive portion for moving a sample stage in an irradiation axis direction of the electron beam; and a column adjusting portion for moving the ion beam column relatively to a sample chamber such that the sample is irradiated with the ion beam at a position irradiated with the electron beam.

Abstract: A focused ion beam system includes a sample holder having a fixing plane for fixing a sample, a sample base on which the sample holder is provided, a focused ion beam irradiating mechanism that irradiates a focused ion beam to the sample, microtweezers that hold the sample and have the axial direction at a predetermined angle to a surface of the sample base, an opening/closing mechanism that opens and closes the microtweezers, a rotating mechanism that rotates the microtweezers about the axial direction, and a moving mechanism that moves the position of the microtweezers.

Abstract: Provided is a composite charged particle beam apparatus, including: an electron beam column for irradiating a sample with an electron beam; an ion beam column for irradiating the sample with an ion beam to perform etching processing; a sample stage drive portion for moving a sample stage in an irradiation axis direction of the electron beam; and a column adjusting portion for moving the ion beam column relatively to a sample chamber such that the sample is irradiated with the ion beam at a position irradiated with the electron beam.

Abstract: A cross-section processing and observation method including: acquiring a surface image by scanning and irradiating a surface of a sample with ion beam; setting, on the surface image, a first sliced region and a second sliced region for performing the slice processing, the second sliced region being adjacent to the first sliced region and having a longitudinal length obtained by subtracting a slice width of the second sliced region from a longitudinal length of the first sliced region; forming a cross-section by irradiating the first sliced region and the second sliced region with the ion beam; and acquiring a cross-sectional image by irradiating the cross-section with electron beam.

Abstract: Provided is a sample preparation method, including: processing a sample by an ion beam, thereby forming a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with the electron beam, thereby forming a deposition film on a front surface of the thin film portion and a deposition film on a rear surface of the thin film portion opposed to the front surface.

Abstract: A sample observation method including: placing a sample stage at a first tilt angle with respect to a charged particle beam, and irradiating an observation surface of a sample with the charged particle beam to acquire a first charged particle image; tilting the sample stage to a second tilt angle different from the first tilt angle about a first sample stage axis, and irradiating the observation surface with the charged particle beam to acquire a second charged particle image; tilting the sample stage to a tilt angle at which an area of the observation surface in the acquired charged particle image is larger between the first charged particle image and the second charged particle image; and irradiating the observation surface with the charged particle beam to observe the observation surface.

Abstract: Provided is an apparatus for preparing a sample including: a sample stage that supports a sample; a focused ion beam column that applies a focused ion beam to the same sample and processes the sample; and an irradiation area setting unit that sets a focused-ion-beam irradiation area including a first irradiation area used to form an observation field irradiated with an electron beam in order to detect backscattered electrons and a second irradiation area used to form a tilted surface tilted with respect to the normal line of the observation field with an angle of 67.5° or more and less than 90°.

Abstract: Provided is a composite charged particle beam apparatus, including: an FIB column (1); an SEM column (2), which is arranged substantially at a right angle with respect to the FIB column (1); a sample stage (3) for mounting a sample (4); a secondary electron detector (5) for detecting a secondary particle generated from the sample (4); an observation image formation portion (8) for forming an FIB image and an SEM image based on a detection signal; and a display portion (9) for displaying the FIB image and the SEM image in which a horizontal direction of the sample in the FIB image and a horizontal direction of the sample in the SEM image are the same.

Abstract: There is provided a sample processing and observing method including irradiating a focused ion beam to a sample to form an observed surface, irradiating an electron beam to the observed surface to form an observed image, removing the surface opposite to the observed surface of the sample, forming a lamella including the observed surface and obtaining a transmission observed image for the lamella.

Abstract: Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface.

Abstract: There is provided a sample processing and observing method including irradiating a focused ion beam to a sample to form an observed surface, irradiating an electron beam to the observed surface to form an observed image, removing the surface opposite to the observed surface of the sample, forming a lamella including the observed surface and obtaining a transmission observed image for the lamella.

Abstract: A focused ion beam system includes a sample holder having a fixing plane for fixing a sample, a sample base on which the sample holder is provided, a focused ion beam irradiating mechanism that irradiates a focused ion beam to the sample, microtweezers that hold the sample and have the axial direction at a predetermined angle to a surface of the sample base, an opening/closing mechanism that opens and closes the microtweezers, a rotating mechanism that rotates the microtweezers about the axial direction, and a moving mechanism that moves the position of the microtweezers.

Abstract: Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface.