Abstract: A piezoelectric element includes a lower electrode film disposed on a substrate, a piezoelectric layer 70 disposed on the lower electrode film, a upper electrode film 80 disposed on the piezoelectric layer 70, wherein the piezoelectric layer 70 is formed of a plurality of columnar grains 70a, and the upper electrode film 80 conforms to the surface shape of each of the grains 70a of the piezoelectric layer 70.

Abstract: Provided is a method of manufacturing a liquid ejecting head, the method including forming a piezoelectric element having a width in a reference direction longer than a width in an orthogonal direction orthogonal to the reference direction on a first substrate, and adhering a second substrate to a surface of the first substrate opposed to the piezoelectric element at a temperature higher than a normal temperature, wherein, in the adhering of the second substrate, the second substrate is adhered such that the first direction of the second substrate is adjusted to the reference direction, using a first thermal expansion coefficient in a first direction on an adhesion surface with the first substrate greater than a second thermal expansion coefficient in a second direction orthogonal to the first direction and the first thermal expansion coefficient greater than a thermal expansion coefficient of the first substrate.

Abstract: Provided is a method of manufacturing a liquid ejecting head, the method including forming a piezoelectric element having a width in a reference direction longer than a width in an orthogonal direction orthogonal to the reference direction on a first substrate, and adhering a second substrate to a surface of the first substrate opposed to the piezoelectric element at a temperature lower than a normal temperature, wherein, in the adhering of the second substrate, the second substrate is adhered such that the first direction of the second substrate is adjusted to the reference direction, using a first thermal expansion coefficient in a first direction on an adhesion surface with the first substrate, the first thermal expansion coefficient is less than a second thermal expansion coefficient in a second direction orthogonal to the first direction and the first thermal expansion coefficient is less than a thermal expansion coefficient of the first substrate.

Abstract: A piezoelectric element includes a lower electrode film disposed on a substrate, a piezoelectric layer 70 disposed on the lower electrode film, a upper electrode film 80 disposed on the piezoelectric layer 70, wherein the piezoelectric layer 70 is formed of a plurality of columnar grains 70a, and the upper electrode film 80 conforms to the surface shape of each of the grains 70a of the piezoelectric layer 70.

Abstract: A liquid ejecting head includes: pressure generation chambers which communicate with nozzle orifices; and piezoelectric elements which induce pressure change in the pressure generation chambers and each include a first electrode, a piezoelectric body layer formed on the first electrode, and a second electrode formed on the side opposite to the first electrode of the piezoelectric body layer, wherein the piezoelectric body layer includes two dielectric films having the substantially same interstitial distance and an intervening layer provided between the two dielectric films and having a different interstitial distance from that of the dielectric film.

Abstract: An actuator device includes a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode that are displaceably provided in sequence on a substrate. The lower electrode includes a flat center portion and an inclined end portion that descends toward the substrate. The piezoelectric layer is disposed above the lower electrode and the substrate, and includes a first, second, and third piezoelectric layer portion constituted by a plurality of columnar crystals. The columnar crystals of the first and second piezoelectric layer portions are orthogonal to the flat portion of the lower electrode and surface of the substrate, while the columnar crystals of the third piezoelectric layer portion extend orthogonally from a surface of the inclined portion and bend to be orthogonal to the surface of the upper electrode, giving the grains of the columnar crystals of the third piezoelectric layer portion larger widths and increased stress resistance.

Abstract: Provided is an actuator device including a piezoelectric element formed of a lower electrode, a piezoelectric layer, and an upper electrode, and displaceably provided on a substrate with a zirconium oxide layer interposed therebetween, the substrate having a silicon oxide layer formed by thermal oxidation on at least a surface, and an intermediate layer made of at least one material selected from the group consisting of titanium oxide, hafnium oxide, aluminum oxide, calcium oxide, and rare earth oxide, and provided between the silicon oxide layer and the zirconium oxide layer.

Abstract: An actuator device includes a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode that are displaceably provided in sequence on a substrate. The lower electrode includes a flat center portion and an inclined end portion that descends toward the substrate. The piezoelectric layer is disposed above the lower electrode and the substrate, and includes a first, second, and third piezoelectric layer portion constituted by a plurality of columnar crystals. The columnar crystals of the first and second piezoelectric layer portions are orthogonal to the flat portion of the lower electrode and surface of the substrate, while the columnar crystals of the third piezoelectric layer portion extend orthogonally from a surface of the inclined portion and bend to be orthogonal to the surface of the upper electrode, giving the grains of the columnar crystals of the third piezoelectric layer portion larger widths and increased stress resistance.

Abstract: An actuator device includes a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode that are displaceably provided in sequence on a substrate. The lower electrode includes a flat center portion and an inclined end portion that descends toward the substrate. The piezoelectric layer is disposed above the lower electrode and the substrate, and includes a first, second, and third piezoelectric layer portion constituted by a plurality of columnar crystals. The columnar crystals of the first and second piezoelectric layer portions are orthogonal to the flat portion of the lower electrode and surface of the substrate, while the columnar crystals of the third piezoelectric layer portion extend orthogonally from a surface of the inclined portion and bend to be orthogonal to the surface of the upper electrode, giving the grains of the columnar crystals of the third piezoelectric layer portion larger widths and increased stress resistance.

Abstract: In a step of forming a piezoelectric precursor film, an application solution is applied onto each of flow passage forming substrate wafers to form piezoelectric precursor films one by one on each of the plurality of flow passage forming substrate wafers constituting a flow passage forming substrate wafer group, and an order of the flow passage forming substrate wafers for starting the application of the application solution to be turned into each of the piezoelectric precursor films is varied by the predetermined number of wafers of the flow passage forming substrate wafer group.

Abstract: A method of manufacturing an actuator device includes forming a Zr layer on one surface of a substrate, forming a ZrO2 layer by oxidizing the Zr layer, forming a lower electrode on top of the ZrO2 layer, forming a piezoelectric layer on top of the lower electrode, and forming an upper electrode on top of the piezoelectric layer. In the method, in forming the Zr layer, the Zr layer is formed through crystal growth of Zr, and the Zr layer thus formed has special crystal regions that protrude from the opposite surface of the Zr layer from the substrate. Each special crystal region has a height of 10 to 100 nm and a diameter of 0.1 to 1 ?m when viewed from above, and the special crystal regions exist with a density of 1.0×106 to 1.0×103/cm2.

Abstract: A method is provided for manufacturing an actuator device including a substrate, a vibration plate, lower electrode, and a piezoelectric element having a piezoelectric layer, and an upper electrode. The vibration plate is formed by forming an insulating film comprised of a columnar crystalline zirconium layer whose surface has an average crystal grain size of about 20 to 50 nm on one surface the substrate, and then thermally oxidizing the zirconium layer into a columnar crystalline zirconium oxide layer whose surface has an average crystal grain size of about 20 to 50 nm. The zirconium layer shows an XRD pattern having a (002) plane peak with an FWHM of 0.4 or less. The piezoelectric element is formed on the lower electrode.

Abstract: Provided is a method of manufacturing a liquid ejecting head, the method including forming a piezoelectric element having a width in a reference direction longer than a width in an orthogonal direction orthogonal to the reference direction on a first substrate, and adhering a second substrate to a surface of the first substrate opposed to the piezoelectric element at a temperature lower than a normal temperature, wherein, in the adhering of the second substrate, the second substrate is adhered such that the first direction of the second substrate is adjusted to the reference direction, using a first thermal expansion coefficient in a first direction on an adhesion surface with the first substrate less than a second thermal expansion coefficient in a second direction orthogonal to the first direction and the first thermal expansion coefficient less than a thermal expansion coefficient of the first substrate.

Abstract: Provided is a method of manufacturing a liquid ejecting head, the method including forming a piezoelectric element having a width in a reference direction longer than a width in an orthogonal direction orthogonal to the reference direction on a first substrate, and adhering a second substrate to a surface of the first substrate opposed to the piezoelectric element at a temperature higher than a normal temperature, wherein, in the adhering of the second substrate, the second substrate is adhered such that the first direction of the second substrate is adjusted to the reference direction, using a first thermal expansion coefficient in a first direction on an adhesion surface with the first substrate greater than a second thermal expansion coefficient in a second direction orthogonal to the first direction and the first thermal expansion coefficient greater than a thermal expansion coefficient of the first substrate.

Abstract: A piezoelectric element includes a lower electrode film disposed on a substrate, a piezoelectric layer 70 disposed on the lower electrode film, a upper electrode film 80 disposed on the piezoelectric layer 70, wherein the piezoelectric layer 70 is formed of a plurality of columnar grains 70a, and the upper electrode film 80 conforms to the surface shape of each of the grains 70a of the piezoelectric layer 70.

Abstract: A liquid ejecting head includes: pressure generation chambers which communicate with nozzle orifices; and piezoelectric elements which induce pressure change in the pressure generation chambers and each include a first electrode, a piezoelectric body layer formed on the first electrode, and a second electrode formed on the side opposite to the first electrode of the piezoelectric body layer, wherein the piezoelectric body layer includes two dielectric films having the substantially same interstitial distance and an intervening layer provided between the two dielectric films and having a different interstitial distance from that of the dielectric film.

Abstract: A piezoelectric element includes a lower electrode film disposed on a substrate, a piezoelectric layer 70 disposed on the lower electrode film, a upper electrode film 80 disposed on the piezoelectric layer 70, wherein the piezoelectric layer 70 is formed of a plurality of columnar grains 70a, and the upper electrode film 80 conforms to the surface shape of each of the grains 70a of the piezoelectric layer 70.

Abstract: A method for producing an actuator device, comprising the steps of: forming a vibration plate on a substrate; and forming a piezoelectric element composed of a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate, wherein in the step of forming the piezoelectric element, the upper electrode is formed on the piezoelectric layer by sputtering, a temperature of 25 to 250 (° C.) and a pressure of 0.4 to 1.5 (Pa) are used during the sputtering, and upon the sputtering, the upper electrode having a thickness of 30 to 100 (nm), stress of 0.3 to 2.0 (GPa), and specific resistance of 2.0 (×10?7 ?·m) or less is formed.

Abstract: In a step of heating a piezoelectric precursor film, piezoelectric films are formed one by one on each of plurality of flow passage forming substrate wafers constituting a flow passage forming substrate wafer group, and an order of the flow passage forming substrate wafers for starting the heating of the piezoelectric precursor film is varied by the predetermined number of wafers of the flow passage forming substrate wafer group.

Abstract: In a step of forming a piezoelectric precursor film, an application solution is applied onto each of flow passage forming substrate wafers to form piezoelectric precursor films one by one on each of the plurality of flow passage forming substrate wafers constituting a flow passage forming substrate wafer group, and an order of the flow passage forming substrate wafers for starting the application of the application solution to be turned into each of the piezoelectric precursor films is varied by the predetermined number of wafers of the flow passage forming substrate wafer group.