Patents by Inventor Xinfen Celia Chen

Xinfen Celia Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8148228
    Abstract: A method for manufacturing a semiconductor device that comprises implanting a first dopant type in a well region of a substrate to form implanted sub-regions that are separated by non-implanted areas of the well region. The method also comprises forming an oxide layer over the well region, such that an oxide-converted first thickness of the implanted sub-regions is greater than an oxide-converted second thickness of the non-implanted areas. The method further comprises removing the oxide layer to form a topography feature on the well region. The topography feature comprises a surface pattern of higher and lower portions. The higher portions correspond to locations of the non-implanted areas and the lower portions correspond to the implanted sub-regions.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: April 3, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Sameer Pendharkar, Binghua Hu, Xinfen Celia Chen
  • Publication number: 20080246117
    Abstract: A method for manufacturing a semiconductor device that comprises implanting a first dopant type in a well region of a substrate to form implanted sub-regions that are separated by non-implanted areas of the well region. The method also comprises forming an oxide layer over the well region, such that an oxide-converted first thickness of the implanted sub-regions is greater than an oxide-converted second thickness of the non-implanted areas. The method further comprises removing the oxide layer to form a topography feature on the well region. The topography feature comprises a surface pattern of higher and lower portions. The higher portions correspond to locations of the non-implanted areas and the lower portions correspond to the implanted sub-regions.
    Type: Application
    Filed: April 5, 2007
    Publication date: October 9, 2008
    Applicant: Texas Instruments Inccorporated
    Inventors: Sameer Pendharkar, Binghua Hu, Xinfen Celia Chen