Abstract: Compositions comprising a fiber component, optionally a dispersing agent operable to disperse the fiber component to create a fiber matrix, a starch component distributed essentially throughout the fiber matrix, and a filler component are disclosed. Methods of forming articles such as containers and packages from such compositions are also disclosed.

Abstract: A manufacturing method for a semiconductor structure includes: a semiconductor substrate is provided, the semiconductor substrate includes multiple first regions and second regions which are alternately disposed; multiple bitline structures are formed on the semiconductor substrate, any one of the bitline structures penetrates through the first regions and the second regions; the bitline structures in the first regions are etched, to enable each sidewall on two sides of each of the bitline structure to be in a step shape; and multiple electrode structures are formed, any one of the electrode structures includes a conductive plug and a contact pad in mutually electric connection, and each conductive plug is disposed at a respective first region, disposed between two neighboring bitline structures and connected to the semiconductor substrate.

Abstract: A memory and its manufacturing method are disclosed herein. The memory includes a substrate, active region in the substrate, and bitline structures on the substrate, the active region extending in a first direction; and capacitor contact windows, the capacitor contact window being located between adjacent ones of the bitline structures, at least one center line of a bottom surface of the capacitor contact window extending in a second direction, an angle between the second direction and the first direction being less than or equal to 45 degrees. The present disclosure is beneficial to improving the signal transmission performance of the memory.

Abstract: Some embodiments provide a program that receives a set of clusters generated from a set of geo-enriched data. The program further identifies a subset of the set of clusters that intersect a map extent of a map. Upon determining that a number of geo-enriched data represented by the subset of the set of clusters is greater than a threshold number, the program renders the map extent of the map to include the subset of the set of clusters. Upon determining that the number of geo-enriched data represented by the subset of the set of clusters is not greater than the threshold number, the program further sends a query for a subset of the set of geo-enriched data that is within the map extent, receives the subset of the set of geo-enriched data and renders the map extent of the map to include the subset of the set of geo-enriched data.

Abstract: A surgical simulator for simulating a surgical scenario comprises a display system, a user interface, and a controller. The controller includes one or more processors coupled to memory that stores instructions that when executed cause the system to perform operations. The operations include generating simulated surgical videos, each representative of the surgical scenario. The operations further include associating simulated ground truth data from the simulation with the simulated surgical videos. The ground truth data corresponds to context information of at least one of a simulated surgical instrument, a simulated anatomical region, a simulated surgical task, or a simulated action. The operations further include annotating features of the simulated surgical videos based, at least in part, on the simulated ground truth data for training a machine learning model.

Abstract: A semiconductor device, a manufacturing method of the semiconductor device, and a storage device are provided. The method includes: providing a semiconductor substrate having multiple first areas and multiple second areas arranged alternately and adjacent to each other; forming on the semiconductor substrate laminated structures each intersecting with the first areas and the second areas; forming side wall structures on surfaces of the laminated structures; filling a sacrificial layer; etching the side wall structures in the first areas so that the laminated structure and the side wall structure form a step shape with the middle higher than both sides of the step shape; forming dielectric layers on the semiconductor substrate in the first areas; and flattening the dielectric layers and the bit lines to remove part of each of the dielectric layers and part of each of the laminated structures on a side away from the semiconductor substrate.

Abstract: A method for manufacturing a semiconductor structure includes: providing a substrate and a bit line structure located on the substrate, the bit line structure including a top dielectric layer and capacitive contact holes being provided on two opposite sides of the bit line structure; forming a first spacer covering a sidewall of the top dielectric layer between the bit line structure and the capacitive contact hole and a second spacer covering a sidewall of the first spacer, a top surface of the second spacer being higher than that of the first spacer; removing at least part of the top dielectric layer to form a first void; forming a first sealing film by a deposition process; and removing a part of the first sealing film which is higher than the top surface of the second spacer, the remaining first sealing film is a first sealing layer.

Abstract: A semiconductor structure manufacturing method includes: providing a substrate; forming a first insulating layer covering the substrate, and patterning the first insulating layer to form a plurality of vias and a plurality of isolation structures that are alternatingly distributed; forming conductive contact plugs in the vias respectively, where the conductive contact plugs cover bottoms of the vias and each includes a first region and a second region adjacent to each other, and the conductive contact plugs located in the first regions cover outer walls of the isolation structures and extend along the outer walls to surfaces of the isolation structures distal from the substrate; and forming a passivation layer covering side walls and surfaces of the conductive contact plugs.

Abstract: An embodiment of the disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, a bit line structure located on the substrate, a capacitor contact hole located on two opposite sides of the bit line structure, and an isolation sidewall. The isolation sidewall is located between the bit line structure and the capacitor contact hole. A gap is provided between the isolation sidewalls located on the two opposite sides of the bit line structure. The gap is located on the bit line structure.

Abstract: A semiconductor structure includes a substrate, bit line structures located on the substrate, capacitor contact holes located on each of two opposite sides of the bit line structure, and isolation side walls, each of the isolation side walls is located between a respective bit line structure and the capacitor contact holes on one side of the bit line structure. A gap isolation layer is provided between the isolation side walls located on two opposite sides of the bit line structure. The gap isolation layer is located on the bit line structure, and a first gap is provided inside the gap isolation layer. A second gap is provided between the isolation side wall and the gap isolation layer.

Abstract: A powertrain system includes an engine coupled to a turbocharger and a timer, a motor generator coupled to the engine and a battery, and a controller. The controller is structured to receive data indicative of a state of charge from the battery, determine whether the state of charge is at or below a high predefined threshold, modulate control on the engine and the timer in response to determining the state of charge is above the high predefined threshold, determine whether the state of charge is above a low predefined threshold in response to the state of charge being at or below the high predefined threshold, and modulate control of the engine and the timer in response to determining the state of charge is at or below the low predefined threshold.

Abstract: Some embodiments provide a non-transitory machine-readable medium that stores a program. The program receives from a computing system a plurality of data and a plurality of points associated with the plurality of data for display in a view of a map. Each point in the set of points includes location data specifying a location of the point. The program further determines that a subset of the plurality of points have the same location data. The program also renders in the view of the map a geometry representing the subset of the plurality of points and an indication that the geometry represents the subset of the plurality of points. For points in the plurality of points other than the subset of the plurality of points, the program further renders geometries that represent the points.

Abstract: The invention relates to uncoated, fiber/starch composite materials manufactured without the use of fluorochemicals or additional binders that offer superior oil and grease resistance properties. Addition of an internal sizing agent in the preparation of the fiber/starch composite materials results in superior hot water and cold water resistance properties. The fiber/starch composite materials may be used for the manufacture of food service containers. The invention also relates to methods of preparation of the fiber/starch composite materials.

Abstract: A simulator for simulating soft body deformation includes a display system, a user interface, and a controller. The controller includes one or more processors coupled to memory that stores instructions that when executed cause the system to perform operations. The operations include generating a simulated soft body having a shape represented, at least in part, by a plurality of nodes. The operations further include determining, with at least a first machine learning model, a displacement of individual nodes included in the plurality of nodes in response to a simulated force applied to the simulated soft body. The operations further include rendering a deformation of the simulated soft body in substantially real time in response to the simulated force based, at least in part, on the displacement.

Abstract: A surgical simulator for simulating a surgical scenario comprises a display system, a user interface, and a controller. The controller includes one or more processors coupled to memory that stores instructions that when executed cause the system to perform operations. The operations include generating simulated surgical videos, each representative of the surgical scenario. The operations further include associating simulated ground truth data from the simulation with the simulated surgical videos. The ground truth data corresponds to context information of at least one of a simulated surgical instrument, a simulated anatomical region, a simulated surgical task, or a simulated action. The operations further include annotating features of the simulated surgical videos based, at least in part, on the simulated ground truth data for training a machine learning model.

Abstract: A system includes a first heater positioned in or proximate to an exhaust aftertreatment system in exhaust gas-receiving communication with an engine, a second heater positioned downstream of the first heater, and a controller coupled to the first and second heaters. The controller is structured to determine, based on information indicative of a temperature regarding the exhaust aftertreatment system, that the temperature is below a temperature threshold; receive information regarding a characteristic of a battery coupled to the first heater and the second heater; control the temperature regarding the exhaust aftertreatment system without using the first or second heaters in response to determining that the characteristic of the battery is below a first threshold; and control a temperature regarding the exhaust aftertreatment system using the first heater in response to determining that the characteristic of the battery is above the first threshold but below a second threshold.

Abstract: The disclosure discloses P. pentosaceus CCFM1012, fermented food thereof and application thereof to preparation of a C. jejuni infection antagonism medicine. The P. pentosaceus CCFM1012 of the disclosure can remarkably reduce a colonization rate of in-vivo C. jejuni of mice infected with C. jejuni and transcriptional activity of virulence genes flaA, cadF, cdtB, cdtC and dnaJ of the C. jejuni, can effectively relieve physiological damage caused by infection of the C. jejuni, can also be used for preparing dairy products, bean products and fruit and vegetable fruits for preventing infection of the C. jejuni and an additive that can be added to a poultry and livestock feed for reducing infection and carrying of the C. jejuni in poultry and livestock, and has quite broad application prospects.

Abstract: A data processing method in a data processing device is provided. First to-be-processed data input into a neural network are obtained. Iterative training is performed on the neural network for a first preset number of times by using first target data in the first to-be-processed data, to obtain a seed model of the neural network. First newly added data generated after an elapse of time corresponding to the first time window is obtained, and the first newly added data and the first to-be-processed data are combined into second to-be-processed data. Iterative training is performed on the seed model for a second preset number of times by using second target data in the second to-be-processed data, to obtain a first incremental model of the neural network. A first preset area overlaps between the second time window and the first time window. The first incremental model online is published.

Abstract: A semiconductor structure and a manufacturing method thereof are present. The method includes: forming a first mask layer having an etching window, wherein the first mask layer includes a first mask sublayer formed on the upper surface of bit line structures, and a second mask sublayer located on the upper surface of the first mask sublayer and the upper surface of an inter-layer dielectric layer, the first mask sublayer has the upper surface level with the upper surface of an inter-layer dielectric layer, and has a plurality of strip-shaped patterns extending in a first direction and spaced apart from each other, and the second mask sublayer has a plurality of strip-shaped patterns extending in a second direction and spaced apart from each other; and etching the inter-layer dielectric layer by using the first mask layer as a mask to form a contact hole exposing a surface of a substrate.

Abstract: A coated cellulose-based food or beverage container that is resistant to penetration by oil and grease in the presence of water. The container may be coated with a starch dispersion that includes a starch having an amylose content of 20% by weight to 100% by weight (e.g., 30% by weight to 50% by weight). Methods for producing the coated container include preparing a starch suspension, heating the starch suspension to form a starch dispersion, applying the heated starch dispersion to the container to form a coating, and drying the coating.