Patents by Inventor Xing Lan
Xing Lan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230016664Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 26, 2022Publication date: January 19, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 11493851Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: GrantFiled: September 23, 2021Date of Patent: November 8, 2022Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Xing Lan Liu, Stefan Cornelis Theodorus Van Der Sanden, Richard Johannes Franciscus Van Haren
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Patent number: 11428521Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: November 5, 2021Date of Patent: August 30, 2022Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20220260925Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: ApplicationFiled: May 6, 2022Publication date: August 18, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
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Patent number: 11347150Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: GrantFiled: March 10, 2021Date of Patent: May 31, 2022Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Bart Peter Bert Segers, Everhardus Cornelis Mos, Emil Peter Schmitt-Weaver, Yichen Zhang, Petrus Gerardus Van Rhee, Xing Lan Liu, Maria Kilitziraki, Reiner Maria Jungblut, Hyunwoo Yu
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Patent number: 11320750Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.Type: GrantFiled: September 25, 2020Date of Patent: May 3, 2022Assignee: ASML Netherlands B.V.Inventors: Leon Paul Van Dijk, Victor Emanuel Calado, Xing Lan Liu, Richard Johannes Franciscus Van Haren
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Publication number: 20220057192Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: November 5, 2021Publication date: February 24, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria VAN BUEL, Christophe David FOUQUET, Hendrik Jan Hidde SMILDE, Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU, Johannes Marcus Maria BELTMAN, Andreas FUCHS, Omer Abubaker Omer ADAM, Michael KUBIS, Martin Jacobus Johan JAK
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Publication number: 20220011681Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: ApplicationFiled: September 23, 2021Publication date: January 13, 2022Applicant: ASML Netherlands B.V.Inventors: Hakki Ergün CEKLI, Xing Lan Liu, Stefan Cornelis Theodorus VAN DER SANDEN, Richard Johannes Franciscus VAN HAREN
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Patent number: 11204239Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: July 17, 2020Date of Patent: December 21, 2021Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 11187995Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.Type: GrantFiled: November 1, 2017Date of Patent: November 30, 2021Assignee: ASML Netherlands B.V.Inventors: Victor Emanuel Calado, Youping Zhang, Maurits Van Der Schaar, Richard Johannes Franciscus Van Haren, Xing Lan Liu
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Patent number: 11156923Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: GrantFiled: December 10, 2015Date of Patent: October 26, 2021Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Xing Lan Liu, Stefan Cornelis Theodorus Van Der Sanden, Richard Johannes Franciscus Van Haren
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Publication number: 20210208512Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.Type: ApplicationFiled: November 1, 2017Publication date: July 8, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Victor Emanuel CALADO, Youping ZHANG, Maurits VAN DER SCHAAR, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU
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Publication number: 20210191278Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: ApplicationFiled: March 10, 2021Publication date: June 24, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
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Patent number: 10990018Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: GrantFiled: February 12, 2018Date of Patent: April 27, 2021Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Bart Peter Bert Segers, Everhardus Cornelis Mos, Emil Peter Schmitt-Weaver, Yichen Zhang, Petrus Gerardus Van Rhee, Xing Lan Liu, Maria Kilitziraki, Reiner Maria Jungblut, Hyunwoo Yu
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Publication number: 20210018852Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.Type: ApplicationFiled: September 25, 2020Publication date: January 21, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Leon Paul VAN DIJK, Victor Emanuel CALADO, Xing Lan LIU, Richard Johannes Franciscus VAN HAREN
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Publication number: 20200348125Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 17, 2020Publication date: November 5, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 10788761Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.Type: GrantFiled: October 17, 2017Date of Patent: September 29, 2020Assignee: ASML Netherlands B.V.Inventors: Leon Paul Van Dijk, Victor Emanuel Calado, Xing Lan Liu, Richard Johannes Franciscus Van Haren
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Patent number: 10718604Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: July 10, 2019Date of Patent: July 21, 2020Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 10545410Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.Type: GrantFiled: February 7, 2017Date of Patent: January 28, 2020Assignee: ASML Netherlands B.V.Inventors: Hakki Ergun Cekli, Masashi Ishibashi, Leon Paul Van Dijk, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Reiner Maria Jungblut, Cedric Marc Affentauschegg, Ronald Henricus Johannes Otten
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Publication number: 20190361358Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: ApplicationFiled: February 12, 2018Publication date: November 28, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria I KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU