Patents by Inventor Xingyao Gao
Xingyao Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240161700Abstract: A display method is applied to a display apparatus including a display panel, a display driver chip, and a microprocessor. The display method includes outputting, by the display panel, a scanning-done signal of a first frame image generated after scanning rows of pixel circuits of the display panel; after the microprocessor or the display driver chip receives the scanning-done signal, writing, by the display driver chip, initial data of a second frame image provided by the microprocessor and outputting, by the display driver chip, display data of the second frame image to the display panel based on the initial data; or outputting, by the display driver chip, the display data of the second frame image to the display panel in response to the scanning-done signal, the display data being generated based on the initial data provided by the microprocessor. The second frame image follows the first frame image.Type: ApplicationFiled: January 19, 2024Publication date: May 16, 2024Applicants: WUHAN TIANMA MICRO-ELECTRONICS CO., LTD., Wuhan Tianma Microelectronics Co., Ltd. Shanghai BranchInventors: Chenguang SUN, Xinyang LI, Zhenqiang LI, Xingyao ZHOU, Yana GAO, Shuai YANG
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Publication number: 20240161671Abstract: The method includes, in a low-frequency driving mode where a keeping phase is arranged between two active phases, providing a light-emitting control signal with a duty cycle of a % to a pixel circuit during the active phase; and performing first and second switches on the light-emitting control signal during the keeping phase. The first switch is performed before the second switch. Panel brightness at the first switch is higher than panel brightness at the second switch. The duty cycle of the light-emitting control signal is b % after the second switch. b>a. A total duration of active levels of the light-emitting control signal within one frame after the first switch is between a total duration of active levels of the light-emitting control signal with the duty cycle of a % and a total duration of active levels of the light-emitting control signal with the duty cycle of b % within one frame.Type: ApplicationFiled: January 17, 2024Publication date: May 16, 2024Applicants: WUHAN TIANMA MICRO-ELECTRONICS CO., LTD., Wuhan Tianma Microelectronics Co., Ltd. Shanghai BranchInventors: Chenguang SUN, Xingyao ZHOU, Yana GAO, Shuai YANG, Mengmeng ZHANG, Jian KUANG
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Publication number: 20240145300Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method includes: depositing a metal buffer layer on a substrate and within a feature disposed in a dielectric layer of the substrate. The buffer layer is deposited using a first physical vapor deposition (PVD) process at a chamber pressure of less than 500 mTorr while applying less than or equal to 0.08 watts/cm2 of RF bias power to the substrate if the chamber pressure is less than or equal to 3 mTorr and applying less than or equal to 0.8 watts/cm2 of RF bias power to the substrate if the chamber pressure is greater than 3 mTorr. A metal liner layer is deposited atop the buffer layer using a second PVD process at a chamber pressure of less than or equal to 3 mTorr while applying greater than 0.08 watts/cm2 of RF bias power to the substrate.Type: ApplicationFiled: October 31, 2022Publication date: May 2, 2024Inventors: Sahil PATEL, Wei LEI, Xingyao GAO, Shirish A. PETHE, Yu LEI
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Publication number: 20240087955Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.Type: ApplicationFiled: September 1, 2023Publication date: March 14, 2024Inventors: Yi XU, Xianyuan ZHAO, Zhimin QI, Aixi ZHANG, Geraldine VASQUEZ, Dien-Yeh WU, Wei LEI, Xingyao GAO, Shirish PETHE, Wenting HOU, Chao DU, Tsung-Han YANG, Kyoung-Ho BU, Chen-Han LIN, Jallepally RAVI, Yu LEI, Rongjun WANG, Xianmin TANG
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Publication number: 20240088071Abstract: Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.Type: ApplicationFiled: September 14, 2022Publication date: March 14, 2024Inventors: Yi XU, Yu LEI, Zhimin QI, Aixi ZHANG, Xianyuan ZHAO, Wei LEI, Xingyao GAO, Shirish A. PETHE, Tao HUANG, Xiang CHANG, Patrick Po-Chun LI, Geraldine VASQUEZ, Dien-yeh WU, Rongjun WANG
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Publication number: 20240014072Abstract: A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal growth.Type: ApplicationFiled: June 21, 2023Publication date: January 11, 2024Inventors: Tsung-Han YANG, Zhimin QI, Yongqian GAO, Rongjun WANG, Yi XU, Yu LEI, Xingyao GAO, Chih-Hsun HSU, Xi CEN, Wei LEI, Shiyu YUE, Aixi ZHANG, Kai WU, Xianmin TANG
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Publication number: 20230420295Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.Type: ApplicationFiled: April 11, 2023Publication date: December 28, 2023Inventors: Tsung-Han YANG, Xingyao GAO, Shiyu YUE, Chih-Hsun HSU, Shirish PETHE, Rongjun WANG, Yi XU, Wei LEI, Yu LEI, Aixi ZHANG, Xianyuan ZHAO, Zhimin QI, Jiang LU, Xianmin TANG
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Publication number: 20230326791Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.Type: ApplicationFiled: April 11, 2022Publication date: October 12, 2023Inventors: Zhimin QI, Yi XU, Shirish A. PETHE, Xingyao GAO, Shiyu YUE, Aixi ZHANG, Wei LEI, Yu LEI, Geraldine VASQUEZ, Dien-yeh WU, Da HE
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Patent number: 8203408Abstract: A leading-out device of a reactor is directly connected to an active part of the reactor and comprises an U-shaped insulating plate, a metal voltage-sharing shield insulating layer covering outside the U-shaped insulating plate and a surrounding insulating layer covering outside the metal voltage sharing shield insulating layer, wherein an oil gap is formed between the surrounding insulating layer and the metal voltage-sharing shield insulating layer. An iron core reactor comprises the leading-out device.Type: GrantFiled: June 26, 2008Date of Patent: June 19, 2012Assignee: Tebian Electric Apparatus Stock Co., LtdInventors: Xingyao Gao, Yumin Ren, Qinglin Luo, Shubo Sun
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Patent number: 8203409Abstract: An iron core reactor includes reactor active parts. The reactor active parts include two or more separate reactor active parts. The coils in the respective active parts are connected in series or in parallel. The respective active parts are placed in a same reactor oil tank.Type: GrantFiled: June 26, 2008Date of Patent: June 19, 2012Assignee: Tebian Electric Apparatus Stock Co., LtdInventors: Juntao Zhong, Yumin Ren, Xingyao Gao, Chunzhen Gu, Shubo Sun
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Patent number: 8203412Abstract: A double active parts structure of a reactor comprises two separate active parts that are coupled together by its inner coils. The arrangement mode of the two active parts is parallel or in-line.Type: GrantFiled: June 26, 2008Date of Patent: June 19, 2012Assignee: Tebian Electric Apparatus Stock Co., LtdInventors: Juntao Zhong, Yumin Ren, Xingyao Gao, Chunzhen Gu, Shubo Sun
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Publication number: 20110217209Abstract: An iron core reactor includes reactor active parts. The reactor active parts include two or more separate reactor active parts. The coils in the respective active parts are connected in series or in parallel. The respective active parts are placed in a same reactor oil tank.Type: ApplicationFiled: June 26, 2008Publication date: September 8, 2011Applicant: TEBIAN ELECTRIC APPARATUS STOCK CO., LTD.Inventors: Juntao Zhong, Yumin Ren, Xingyao Gao, Chunzhen Gu, Shubo Sun
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Publication number: 20110148557Abstract: A double active parts structure of a reactor comprises two separate active parts that are coupled together by its inner coils. The arrangement mode of the two active parts is parallel or in-line.Type: ApplicationFiled: June 26, 2008Publication date: June 23, 2011Applicant: TEBIAN ELECTRIC APPARATUS STOCK CO., LTD.Inventors: Juntao Zhong, Yumin Ren, Xingyao Gao, Chunzhen Gu, Shubo Sun
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Publication number: 20110121933Abstract: A leading-out device of a reactor is directly connected to an active part of the reactor and comprises an U-shaped insulating plate, a metal voltage-sharing shield insulating layer covering outside the U-shaped insulating plate and a surrounding insulating layer covering outside the metal voltage sharing shield insulating layer, wherein an oil gap is formed between the surrounding insulating layer and the metal voltage-sharing shield insulating layer. An iron core reactor comprises the leading-out device.Type: ApplicationFiled: June 26, 2008Publication date: May 26, 2011Applicant: TEBIAN ELECTRIC APPARATUS STOCK CO., LTD.Inventors: Xingyao Gao, Yumin Ren, Qinglin Luo, Shubo Sun