Patents by Inventor Xinrong Yang

Xinrong Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210399341
    Abstract: The present invention relates to an electrolyte, an additive thereof, a secondary cell, and an application thereof. An organic electrolyte according to a first aspect of the invention comprises a salt, a phosphate ester and a fluoroether, and does not comprise a carbonate ester. The salt is a lithium salt or a sodium salt. The electrolyte according to a second aspect of the invention comprises a base electrolyte and an additive. The base electrolyte comprises a sodium salt and a flame retardant solvent. The flame retardant solvent comprises a phosphate ester and a fluoroether. The additive comprises a fluorine-containing additive. The electrolyte and the secondary cell of the present invention increase safety.
    Type: Application
    Filed: October 29, 2019
    Publication date: December 23, 2021
    Inventors: Haiying CHE, Yonghong DENG, Xinrong YANG, Zifeng MA
  • Patent number: 8395082
    Abstract: A solid-state laser lift-off apparatus comprises: a solid-state laser (1), a light beam shaping lens (3), motors of oscillating mirrors (5,7), oscillating mirrors (4,6), a field lens (9), a movable platform (10), an industrial control computer and control software (8). The light beam shaping lens (3) is behind the solid-state laser (1), shaping the laser beam from the solid-state laser (1) into required shape. The motors of oscillating mirrors (5,7) are in front of the field lens (9), controlling the movement of the oscillating mirrors (4,6) according to the instruction of the control software (8) to implement different light beam scanning paths. A lift-off method for applying the solid-state laser lift-off apparatus uses a small laser spot to perform scanning, and enables damage-free separation of GaN from a sapphire substrate.
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: March 12, 2013
    Assignee: Sino Nitride Semiconductor Co., Ltd.
    Inventors: Guoyi Zhang, Xinrong Yang, Mingkun He, Yongjian Sun
  • Patent number: 8338313
    Abstract: A method for nondestructive laser lift-off of GaN from sapphire substrates is disclosed. A solid-state laser is used as the laser source. A small laser-spot having a perimeter length of 3 to 1000 micrometers and a distance of two farthest corners or a longest diameter of no more than 400 micrometers is used for laser scanning point-by-point and line-by-line. The energy at the center of the laser-spot is the strongest and is gradually reduced toward the periphery. A nondestructive laser lift-off with a small laser-spot is achieved. The scanning mode of the laser lift-off is improved. Device lift-off can be achieved without the need of aiming. As a result, the laser lift-off process is simplified, and the efficiency is improved while the rejection rate is reduced. The obstacles of the industrialization of the laser lift-off process are removed.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: December 25, 2012
    Assignee: Sino Nitride Semiconductor Co, Ltd.
    Inventors: Guoyi Zhang, Yongjian Sun, Xiangning Kang, Zhizhong Chen, Zhijian Yang, Xinrong Yang
  • Publication number: 20120064735
    Abstract: A solid-state laser lift-off apparatus comprises: a solid-state laser (1), a light beam shaping lens (3), motors of oscillating mirrors (5,7), oscillating mirrors (4,6), a field lens (9), a movable platform (10), an industrial control computer and control software (8). The light beam shaping lens (3) is behind the solid-state laser (1), shaping the laser beam from the solid-state laser (1) into required shape. The motors of oscillating mirrors (5,7) are in front of the field lens (9), controlling the movement of the oscillating mirrors (4,6) according to the instruction of the control software (8) to implement different light beam scanning paths. A lift-off method for applying the solid-state laser lift-off apparatus uses a small laser spot to perform scanning, and enables damage-free separation of GaN from a sapphire substrate.
    Type: Application
    Filed: May 5, 2010
    Publication date: March 15, 2012
    Inventors: Guoyi Zhang, Xinrong Yang, Mingkun He, Yongiian Sun
  • Publication number: 20110201191
    Abstract: A method for nondestructive laser lift-off of GaN from sapphire substrates utilizing a solid-state laser is disclosed in the present invention, wherein, a solid-state laser is used as the laser source, and a small laser-spot with a circumference of 3 to 1000 micrometers and a distance of two farthest corners or a longest diameter of no more than 400 micrometers is used for laser scanning point-by-point and line-by-line, wherein the energy in the small laser-spot is distributed such that the energy in the center of the laser-spot is the strongest and is gradually reduced toward the periphery. According to the present invention, a nondestructive laser lift-off with a small laser-spot is achieved, and a scanning mode of the laser lift-off is improved, thereby a lift-off method without the need of aiming is achieved.
    Type: Application
    Filed: April 21, 2009
    Publication date: August 18, 2011
    Inventors: Guoyi Zhang, Yongjian Sun, Xiangning Kang, Zhizhong Chen, Zhijian Yang, Xinrong Yang