Abstract: A glucocerebroside compound, a pharmaceutical composition thereof, and the use of the glucocerebroside compound and the pharmaceutical composition thereof in the preparation of drugs for preventing or treating immune-related diseases.

Abstract: Disclosed is a magnetorheological intelligent fixture for grinding, including a container (1), a water bladder (2), a pressure transmitter (4), a water pump (15), a first electromagnet (8), a controller (10), and an elastic telescopic rod. The elastic telescopic rod is disposed at a bottom of the container (1). Each side wall of the container (1) is provided with the water bladder (2). The water bladders (2) are mutually communicated. The water bladders (2) are respectively communicated with the pressure transmitter (14) and the water pump (15) respectively. The water pump (15) is connected to the water tank (6). A workpiece to be clamped is disposed at a top of the elastic telescopic rod. The container (1) is disposed above the first electromagnet (18). The first electromagnet (8), the pressure transmitter (4), and the water pump (15) are all electrically connected to the controller (10).

Abstract: Disclosed are a method and a system for forecasting an agricultural product price based on signal decomposition and deep learning. The method includes: S1, obtaining price subsequences by performing a complementary ensemble empirical mode decomposition (CEEMD) on an original price sequence of agricultural products; S2, obtaining a reconstructed sequence based on the price subsequences; S3, obtaining data features of the reconstructed sequence based on the reconstructed sequence; and S4, constructing a Bi-directional Sequence to Sequence (BiSeq2seq) model, and inputting the data features of the reconstructed sequence into a CCS-Bi-directional Sequence to Sequence (CCS-BiSeq2seq) model to obtain a forecasting result.

Abstract: In a method for fabricating a semiconductor device, a stack of alternating insulating layers and sacrificial layers are formed over a substrate. A staircase having a plurality of steps are formed in the stack, where each of the plurality of steps has a tread and a riser and further includes a respective pair of the insulating layer and the sacrificial layer over the insulating layer of the respective step. A dielectric layer is formed along the treads and risers of the plurality of steps. The dielectric layer is doped with one or a combination of carbon, phosphorous, boron, arsenic, and oxygen. The sacrificial layers are further replaced with a conductive material to form word line layers that are arranged between the insulating layers. A plurality of word line contacts are formed to extend from the word line layers of the plurality of steps, and further extend through the dielectric layer.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate and a first bonding layer on a surface of the first substrate, and the material of first bonding layer includes dielectric materials of silicon, nitrogen and carbon, and an atomic concentration of carbon in the first bonding layer gradually increases along with an increase of thickness of the first bonding layer from the surface of first substrate and reaches a maximum atomic concentration of carbon at a surface of the first bonding layer.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: This application discloses a wireless communication method, apparatus, and system, to ensure service quality of terminal communication in a non-standalone NSA networking architecture. The wireless communication method includes: starting, by a terminal, RRC connection establishment with an NR cell based on an indication of a network device, and starting a timer based on a quantity of RRC connection establishment failures of the NR cell, where the timer is set to first duration. Within the first duration, when the network device indicates the terminal to report measurement results of the NR cell and another cell, the terminal only reports the measurement result of the other cell, but does not report the measurement result of the NR cell.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: A method of forming a semiconductor structure, including steps of providing a first substrate, and forming a first bonding layer on a surface of the first substrate, wherein a material of the first bonding layer includes dielectric material of silicon, nitrogen and carbon.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.

Abstract: A connection terminal is provided, including at least one impedance branch circuit, where each impedance branch circuit includes one or more impedance elements and two first conductive connectors, each first conductive connector has a first end and a second end, first ends of the two first conductive connectors are configured to be coupled with a driving power supply and an illumination lamp, and second ends of the two first conductive connectors are configured to be coupled with two ends of the one or more impedance elements. An illumination device is provided, including a driving power supply, an illumination lamp and the connection terminal in the present disclosure, input ends of the driving power supply are coupled with an AC power grid, its out ends are coupled with two ends of the illumination lamp to form a driving circuit, and the connection terminal is connected to the driving circuit.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

Abstract: A connection terminal is provided, including at least one impedance branch circuit, where each impedance branch circuit includes one or more impedance elements and two first conductive connectors, each first conductive connector has a first end and a second end, first ends of the two first conductive connectors are configured to be coupled with a driving power supply and an illumination lamp, and second ends of the two first conductive connectors are configured to be coupled with two ends of the one or more impedance elements. An illumination device is provided, including a driving power supply, an illumination lamp and the connection terminal in the present disclosure, input ends of the driving power supply are coupled with an AC power grid, its out ends are coupled with two ends of the illumination lamp to form a driving circuit, and the connection terminal is connected to the driving circuit.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.

Abstract: The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first bonding layer on the surface of first substrate, the material of first bonding layer includes dielectrics such as Si, N and C, and the first bonding layer of semiconductor structure is provided with higher bonding force in wafer bonding.

Abstract: A magnesium halide adduct represented by the formula (I): MgX2.mROH.nE.pH2O, in which X is chlorine, bromine, a C1-C12 alkoxy, a C3-C10 cycloalkoxy or a C6-C10 aryloxy, with the proviso that at least one X is chlorine or bromine; R is a C1-C12 alkyl, a C3-C10 cycloalkyl or a C6-C10 aryl; E is an o-alkoxybenzoate compound represented by the formula (II): in which R1 and R2 groups are independently a C1-C12 linear or branched alkyl, a C3-C10 cycloalkyl, a C6-C10 aryl, a C7-C10 alkaryl or an C7-C10 aralkyl, the R1 and R2 groups are identical to or different from the R group; m is in a range of from 1.0 to 5.0; n is in a range of from 0.001 to 0.5; and p is in a range of from 0 to 0.8, is disclosed. A catalyst component useful in olefin polymerization, which comprises a reaction product of (1) the magnesium halide adduct, (2) a titanium compound, and optionally (3) an electron donor compound, is also disclosed.