Abstract: An operation method for a memory device is provided. The memory device includes a two-terminal selector and a resistance variable storage element coupled to the two-terminal selector. The method includes providing a voltage pulse to the memory device. A voltage applied across the two-terminal selector during a falling part of the voltage pulse falls below a holding voltage of the two-terminal selector. A voltage falling rate of the falling part at which the voltage applied across the two-terminal selector reaches the holding voltage is raised for reducing threshold voltage drift of the two-terminal selector.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: First fire operations for an ovonic threshold switch (OTS) selector is provided. A first fire operation includes setting a peak amplitude of a voltage pulse, and performing at least one cycle, including: providing the voltage pulse to the OTS selector; sensing an output current passing through the OTS selector in response to the received voltage pulse; comparing a peak amplitude of the voltage pulse with a maximum peak amplitude ensuring initialization of the OTS selector; ending the first fire operation if the peak amplitude reaches the maximum peak amplitude; comparing the output current with a target current indicative of initialization of the OTS selector if the peak amplitude is lower than the maximum peak amplitude; ending the first fire operation if the output current reaches the target current; and setting another voltage pulse with a greater peak amplitude if the output current is lower than the target current.

Abstract: A memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material.

Abstract: Systems and methods for obfuscating sensitive data by aggregating the data based on data attributes are provided. Each sensitive data record contains at least one sensitive attribute. A data protection system generates a data transformation model based on the sensitive data records and transforms the sensitive data records using the data transformation model. The data protection system further compresses the sensitive database by grouping the sensitive data records into aggregation segments based on the transformed sensitive data records. The data protection system generates aggregated data by calculating statistics for the at least one sensitive attribute contained in the sensitive data records in each of the aggregation segments. The aggregated data can be made accessible by client computing devices that are unauthorized to access the sensitive data records.

Abstract: Attribute data structures can be updated to indicate joint relationships among attributes and predictive outputs in training data that can be used for training automated modeling system. A data structure that stores training data for training an automated modeling algorithm can be accessed. The training data can include first data for a first attribute and second data for a second attribute. The data structure can be modified to include a derived attribute that indicates a joint relationship among the first attribute, the second attribute, and a predictive output variable. The automated modeling algorithm can be trained with the first attribute, the second attribute, and the derived attribute.

Abstract: Attribute data structures can be updated to indicate joint relationships among attributes and predictive outputs in training data that can be used for training automated modeling system. A data structure that stores training data for training an automated modeling algorithm can be accessed. The training data can include first data for a first attribute and second data for a second attribute. The data structure can be modified to include a derived attribute that indicates a joint relationship among the first attribute, the second attribute, and a predictive output variable. The automated modeling algorithm can be trained with the first attribute, the second attribute, and the derived attribute.